Acorn Semi, LLC

Acorn Technologies, Inc.

Applied Materials, Inc.

Other

Acorn Technology, Inc.

Applied Matrials, Inc.

Applied Amterials, Inc.

Andreas Goebel

Paul A Clifton

R Stockton Gaines

Walter A Harrison

Gregory L Wojcik

Lawrence Camest West

Daniel J Connelly

Francisco A Leon

Claes H Bjorkman

Moshe Sarfaty

Sebastien Raoux

Yonah Cho

Thomas Joseph Kropewnicki

Eric Perozziello

Dylan F Logan

Paul E Jessop

Vaishali Ukirde

Andrew P Knights

A nanowire transistor includes undoped source and drain regions electrically coupled with a channel region. A source stack that is electrically isolated from a gate conductor includes an interfacial layer and a source conductor, and is coaxially wrapped completely around the source region, extending along at least a portion of the source region. A Schottky barrier between the source conductor and the source region is a negative Schottky barrier and a concentration of free charge carriers is induced in the semiconductor source region.

Nanowire transistor with source and drain induced by electrical contacts with negative Schottky barrier height

A semiconductor structure includes a layer arrangement consisting of, in sequence, a semiconductor-on-insulator layer (SOI) over a buried oxide (BOX) layer over a buried stressor (BS) layer with a silicon bonding layer (BL) intervening between the BOX and the BS layers. The semiconductor structure may be created by forming the BS layer on a substrate of a first wafer; growing the BL layer at the surface of the BS layer; wafer bonding the first wafer to a second wafer having a silicon oxide layer formed on a silicon substrate such that the silicon oxide layer of the second wafer is bonded to the BL layer of the first wafer, and thereafter removing a portion of the silicon substrate of the second wafer.

SOI wafers and devices with buried stressors

Techniques for reducing the specific contact resistance of metal-semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal-group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

Metal contacts to group IV semiconductors by inserting interfacial atomic monolayers

An electrical contact structure (an MIS contact) includes one or more conductors (M-Layer), a semiconductor (S-Layer), and an interfacial dielectric layer (I-Layer) of less than 4 nm thickness disposed between and in contact with both the M-Layer and the S-Layer. The I-Layer is an oxide of a metal or a semiconductor. The conductor of the M-Layer that is adjacent to and in direct contact with the I-Layer is a metal oxide that is electrically conductive, chemically stable and unreactive at its interface with the I-Layer at temperatures up to 450&#xb0; C. The electrical contact structure has a specific contact resistivity of less than or equal to approximately 10-10&#x3a9;-cmwhen the doping in the semiconductor adjacent the MIS contact is greater than approximately 2&#xd7;10cmand less than approximately 10&#x3a9;-cmwhen the doping in the semiconductor adjacent the MIS contact is greater than approximately 10cm.

MIS contact structure with metal oxide conductor

Relating to SOI wafers and devices with buried stressors

Tensile strained germanium is provided that can be sufficiently strained to provide a nearly direct band gap material or a direct band gap material. Compressively stressed or tensile stressed stressor materials in contact with germanium regions induce uniaxial or biaxial tensile strain in the germanium regions. Stressor materials may include silicon nitride or silicon germanium. The resulting strained germanium structure can be used to emit or detect photons including, for example, generating photons within a resonant cavity to provide a laser.

Tensile strained semiconductor photon emission and detection devices and integrated photonics system

SOI wafers and devices with buried stressor

Techniques for reducing the specific contact resistance of metal&#x2014;semiconductor (group IV) junctions by interposing a monolayer of group V or group III atoms at the interface between the metal and the semiconductor, or interposing a bi-layer made of one monolayer of each, or interposing multiple such bi-layers. The resulting low specific resistance metal&#x2014;group IV semiconductor junctions find application as a low resistance electrode in semiconductor devices including electronic devices (e.g., transistors, diodes, etc.) and optoelectronic devices (e.g., lasers, solar cells, photodetectors, etc.) and/or as a metal source and/or drain region (or a portion thereof) in a field effect transistor (FET). The monolayers of group III and group V atoms are predominantly ordered layers of atoms formed on the surface of the group IV semiconductor and chemically bonded to the surface atoms of the group IV semiconductor.

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Mountain View, CA, United States of America

Andreas Goebel