Robert Bosch

Other

Andrea Schilp

Franz Laermer

Volker Becker

Karsten Funk

Michael Offenberg

Gerhard Benz

Werner Uhler

Horst Muenzel

Erich Zabler

Jiri Marek

Juergen Kurle

Frank Bantien

Klaus Breitschwerdt

Thomas Beck

Hans-Martin Kulcke

Markus Lutz

Richard Spitz

Hans-Peter Trah

Bernhard Elsner

Martin Willmann

Doerte Eimers-Klose

Michael Kupzig

Helga Uebbing

Gero Guenther

Jurgen Schirmer

A method and a device suitable for implementing this method for etching a substrate (), a silicon body in particular, using an inductively coupled plasma () are proposed. For this purpose, a radio-frequency electromagnetic alternating field is generated with an ICP source (), the alternating field generating an inductively coupled plasma () of reactive particles in a reactor (). The inductively coupled plasma () arises by the action of the radio-frequency electromagnetic alternating field on a reactive gas. Furthermore, a device is provided with which a plasma power injected into the inductively coupled plasma () via the radio-frequency electromagnetic alternating field with the ICP source () is capable of being pulsed so that at least from time to time a pulsed radio-frequency power can be injected into the inductively coupled plasma () as a pulsed radio-frequency power. In addition, the pulsed plasma power can be combined or correlated with a pulsed magnetic field and/or a pulsed substrate electrode power.

Device and method for etching a substrate using an inductively coupled plasma

A plasma etching system for etching, in particular anisotropic etching, of a substrate by using a plasma. The plasma etching system has a first plasma-generating device which is inductively coupled in particular and has a first arrangement for generating a first high-frequency electromagnetic alternating field, a first plasma-generating area for generating a first plasma and a first gas feed, as well as a first plasma-generating device downstream from a second plasma-generating device which is inductively coupled in particular and has a second arrangement for generating a second high-frequency electromagnetic alternating field, a second plasma-generating area for generating a second plasma and a second gas feed. The substrate to be etched is arranged in the first plasma-generating device. The second plasma is suppliable to the first plasma-generating device via the first gas feed at least partially as a first reactive gas.

Plasma etching equipment

A method for eliminating eruptions, impurities, and/or damage in a crystal lattice by selectively etching silicon elements of surface-plated and sawn-out parts of a silicon wafer. At least areas of the silicon elements are brought into contact with a gaseous etching medium that etches silicon selectively in a chemical reaction, and gaseous reaction products are produced during etching. An interhalogen or fluorine-noble gas compound that is in a gaseous state or was converted to the gaseous phase may be used as the etching medium. The method is believed to be suitable for producing power diodes sawn from a wafer or for overetching fully mounted individual diodes.

Method for removing defects from silicon bodies by a selective etching process

A method of plasma etching, in particular of anisotropic plasma etching, of laterally defined structures in a silicon substrate, using a process gas, includes having at least one passivating material precipitated on the side walls of the laterally defined structures at least from time to time prior to and/or during etching. In an exemplary method, at least one of the compounds selected from the group ClF, BrF, or IFis added to the process gas as a fluorine-delivering etching gas. In another exemplary method, NFis added to the process gas, at least from time to time, as an additive consuming the passivating material. Finally, in another exemplary method, a light and easily ionizable gas, in particular H, He, or Ne, is added, at least from time to time, to the process gas. The three exemplary methods may be combined.

Methods for plasma etching of silicon

A device and a method for etching a substrate, in particular a silicon body, by using an inductively coupled plasma. A high-frequency electromagnetic alternating field is generated using an ICP source, and an inductively coupled plasma composed of reactive particles is generated by the action of a high-frequency electromagnetic alternating field on a reactive gas in a reactor. In addition, a static or time-variable magnetic field is generated between the substrate and the ICP source, for which purpose at least two magnetic field coils arranged one above the other are provided. The direction of the resulting magnetic field is also approximately parallel to the direction defined by the tie line connecting the substrate and the inductively coupled plasma. Finally, a first component magnetic field is generated with a first magnetic field coil, and a second component magnetic field which is equally strong at an equivalent site is generated with a second magnetic field coil, the two component magnetic fields being oriented in opposite directions.

Device and method for etching a substrate by using an inductively coupled plasma

A method is proposed for etching a first silicon layer () that is provided with an etching mask () for defining lateral recesses (). In a first plasma etching process, trenches () are produced in the region of the lateral recesses () by anisotropic etching. The first etching process comes virtually to a standstill as soon as a separating layer (), buried between the first silicon layer () and a further silicon layer (), is reached. This separating layer is thereupon etched through in exposed regions () by a second etching process. A subsequent third etching process then etches the further silicon layer (). In this manner, free-standing structures for sensor elements can be produced in a simple process which is completely compatible with the method steps in IC integration technology.

Method for processing silicon using etching processes

A method is proposed for etching patterns in an etching body (), in particular cut-outs in a silicon body () exactly defined in a lateral manner, using a plasma (). In this context, a high-frequency-pulsed high-frequency power is at least temporarily coupled into the etching body () via an at least temporarily applied high-frequency a.c. voltage. This coupled, high-frequency-pulsed high-frequency power is further modulated at a low frequency, in particular clocked. The proposed method opens a wide process window for varying the etching parameters in the implemented plasma etching process, and is especially suitable for etching patterns in silicon using high mask selectivity and high etching rates for simultaneously minimized charge effects, in particular with respect to notching on the dielectric boundary surface.

Plasma etching method having pulsed substrate electrode power

A device and a method for determining the extent of an at least locally lateral undercut of a structured surface layer on a sacrificial layer. The structured surface layer for this purpose locally has at least one passive electronic component, using which a physical measured quantity can be determined, which is proportional to the extent of the lateral undercut. The method for generating this device proposes, initially on the structured surface layer in a first etching method, to provide the surface layer at least locally with a structuring having trenches and, in a second etching method, proceeding from the trenches, to undertake at least locally a lateral undercut of the structured surface layer. In this context, in the first etching method on the surface layer, locally at least one passive electronic component is additionally delineated out, which in response to a subsequent undercutting of the surface layer is also undercut. The physical measured quantity is determined without contact, preferably by sending an electromagnetic emission into the passive component.

Device and method for determining the lateral undercut of a structured surface layer

A method and a suitable device for carrying out this method is proposed, for etching a substrate (), especially a silicon element, with the aid of an inductively coupled plasma (). For this purpose, a high frequency electromagnetic alternating field is generated, which produces an inductively coupled plasma () from reactive particles in a reactor (). In this connection, the inductively coupled plasma () comes about by the action of the high frequency electromagnetic alternating field upon a reactive gas. Furthermore, a device, in particular a magnetic field coil () is provided which produces a static or timewise varying magnetic field between the substrate () and the ICP source (). For this, the magnetic field is oriented in such a way that its direction is at least approximately or predominantly parallel to the direction defined by the line connecting the substrate () and the inductively coupled plasma ().

A device and a method capable of being carried out therewith for, preferably, anisotropically etching a substrate ( ), in particular, a patterned silicon body, with the assistance of a plasma ( ), is proposed. In the process, the plasma ( ) is produced by a plasma source ( ) to which a high-frequency generator ( ) is connected for applying a high-frequency power. Moreover, this high-frequency generator is in communication with a first means which periodically changes the high-frequency power applied to the plasma source ( ). Besides, provision is preferably made for a second means which adapts the output impedance of the high-frequency generator ( ) to the prevailing impedance of the plasma source ( ) which changes as a function of the high-frequency power. The proposed anisotropic etching method is carried out in separate and alternating etching and polymerization steps, a higher high-frequency power of up to 5000 watts being, at least temporarily, applied to the plasma source ( ) during the etching steps than during the deposition steps. The proposed device is also suitable for igniting a plasma ( ) and for adjusting upward or pulsing a plasma power from a starting value to up to 5000 watts.

DEVICE AND METHOD FOR THE HIGH-FREQUENCY ETCHING OF A SUBSTRATE USING A PLASMA ETCHING INSTALLATION AND DEVICE AND METHOD FOR IGNITING A PLASMA AND FOR PULSING THE PLASMA OUT PUT OR ADJUSTING THE SAME UPWARDS

A method of anisotropic etching of structures in a semiconductor body, in particular of recesses in a silicon body ( ) exactly defined laterally by an etching mask, by using a plasma ( ) is proposed. An ion acceleration voltage induced in particular by a high-frequency AC voltage is applied to the semiconductor body at least during an etching step having a predefined duration. The duration of the etching step is further subdivided into at least two etching segments between which the ion acceleration voltage applied is modified each time. Preferably two etching segments are provided, a higher acceleration voltage being used during the first etching segment than during the second etching step. The length of the first etching segment can furthermore be determined dynamically or statically during the etching steps using a device for the detection of a polymer breakdown. In order to generate and adjust the value of the acceleration voltage, preferably high-frequency pulses or pulse packets having an adjustable pulse/pause ratio are used.

Method for anisotropic plasma etching of semiconductors

A method of sacrificial layer etching of micromechanical surface structures, in which a sacrificial layer is deposited on a heatable silicon substrate and is structured. A temperature difference between the substrate and the vapor phase of an etching medium is established in such a way that exposed metal contacts made of aluminum alloys are not attacked at the same time and are not subsequently exposed to any risk of corrosion.

Method of manufacturing micromechanical surface structures by vapor-phase etching

A method of anisotropic etching of silicon with structures, preferably defined with an etching mask, by using a plasma, with a polymer being applied during a polymerization step to the lateral border of the structures defined by the etching mask, then being partially removed again during the following etching step and being redeposited in deeper side walls of the structure newly formed due to the etching reaction, and the etching is performed with an etching gas containing 3 to 40 vol % oxygen. In this way it is possible to prevent sulfur contamination in the exhaust gas area in high rate etching of silicon.

Method of anisotropic etching of silicon

A plasma processing system for etching a substrate using a highly dense plasma in a reactor. An ICP coil having a first coil end and a second coil end generating a high-frequency electromagnetic alternating field in the reactor which acts on a reactive gas and, as an inductively coupled plasma source, produces the highly dense plasma from reactive particles and ions. The two coil ends each communicate via a feed point with a high-frequency infeed, which applies in each case a high-frequency a.c. voltage of the same frequency to the first coil end and to the second coil end (21, 21&prime;). The two high-frequency a.c. voltages applied at the two coil ends are connected to a symmetrical, capacitive network via a &lgr;2 -delay line linking the first feed point and the second feed point and are, at least nearly in phase opposition to one another, and have at least nearly the same amplitudes.

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Schwaebisch Gmuend, Germany

Andrea Schilp