Eaton Corporation

Axcelis Technologies, Inc.

Andre G Cardoso

Alan C Janos

Joel Penelon

David William Kinnard

Palani Sakthivel

Daniel B Richardson

Ricky Ruffin

Qingyan Han

A process and apparatus for determining a real-time etching rate during a plasma mediated etching process. Real-time etching rate determination includes monitoring an interference pattern generated by a direct light beam and a reflected light beam from a wafer surface. A viewing angle for recording the interference pattern is nearly parallel to the wafer plane and at a fixed focal point on the layer to be removed. The direct light beam and reflected light beams are generated in situ during plasma processing.

Shallow angle interference process and apparatus for determining real-time etching rate

The present invention is directed to optimization of the optical detection system for the use of optical emission spectroscopy in end-point detection. The optimization specifically addresses the needs of a radiant heated wafer system in a downstream process chamber environment. The present invention maximizes signal light from relevant reactions, maximizes signal-to noise and signal-to-background ratios, utilizes very small diagnostics access, collects light from the region of most intense light emission from endpoint processes, collects light from representative parts of an entire wafer with just one diagnostic access port to ensure complete end-point, and eliminates light signals from sources other than the wafer.

Optimized optical system design for endpoint detection

A method for determining an endpoint for an oxygen free plasma stripping process for use in semiconductor wafer processing. The method comprises exciting a gas composition containing a nitrogen gas and a reactive gas to form the oxygen free plasma. The oxygen free plasma reacts with a substrate having a photoresist and/or residues thereon to produce emitted light signals corresponding to an oxygen free reaction product. The endpoint is determined by optically measuring a primary emission signal of the oxygen free reaction product at a wavelength of about 387 nm. The endpoint is determined when the plasma no longer reacts with the photoresist and/or residues on the substrate to produce the emitted light at about 387 nm, an indication that the photoresist and/or residues have been removed from the wafer. Secondary emission signals of the oxygen free reaction product at about 358 nm and 431 nm can also be monitored for determining the endpoint.

Method for detecting an endpoint for an oxygen free plasma process

A temperature control system (,) is provided for a plasma processing device (,). The plasma processing device (,) comprises a plasma generator (,) and a processing chamber (,) in communication with the plasma generator (,) such that plasma within the generator may pass into the chamber and react with the surface of a substrate (,) residing therein. The temperature control system (,) comprises (i) a radiant heater assembly (,) for heating the substrate (,), comprising a plurality of radiant heating elements (,) arranged in a plurality of zones (a-n), each zone comprising at least one heating element, and a focused reflector (,) for focusing radiant energy from the heating elements toward the substrate; (ii) a feedback mechanism (,) for providing a substrate temperature feedback signal (,); and (iii) a controller (,), including a P-I-D closed loop controller (,) and a lamp power controller (,). The P-I-D closed loop controller (,) receives a temperature setpoint signal and the temperature feedback signal and in response thereto independently adjusts a control variable sent to the lamp power controller. The power controller (,) then adjusts the power applied to the plurality of zones of radiant heating elements, independently of the control variable, based on temperature zone maps stored in processor memory. The power controller operates in at least a first ramp state and a second steady state, depending upon the magnitude of difference (&Dgr;) between the temperature setpoint signal and the temperature feedback signal.

Zone controlled radiant heating system utilizing focused reflector

A temperature probe for use in low pressure processes having an improved thermal response wherein fluid is supplied to a fluid transport passageway in the probe head for creating an increased pressure between the probe head and a semiconductor wafer for increasing the thermal conductivity therebetween.

Temperature probe and measurement method for low pressure process

A radiant heating apparatus for reducing the cumulative temperature gradient over a semiconductor workpiece during a low temperature process is comprised of a plurality of reflecting units, wherein each reflecting unit is comprised of a back reflector, a tubular reflector extending from the back reflector towards the workpiece, and a radiant energy source disposed in the tubular reflector in front of the back reflector, wherein a cross section of the tubular reflector is in the shape of a truncated segment of a circle.

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Laurel, MD, United States of America

Andre G Cardoso