Kla-tencor Technologies Corporation

Applied Materials, Inc.

Kla Tencor Corporation

Anantha R Sethuraman

Christopher F Bevis

Charles L Chen

Haiguang Chen

Kurt Lehman

Ronald L Allen

Ching Ling Meng

Robert Shinagawa

Thanassis Trikas

Raman K Nurani

Koushik Ragavan

Karanpreet Aujla

Guoheng Zhao

Mehrdad Nikoonahad

Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving data from one or more manufacturing tools about a manufacturing process of a silicon wafer. The method further includes determining, based on the data, predictive information about a quality of the silicon wafer. The method further includes providing the predictive information to a manufacturing system, wherein the predictive information is used to determine whether to take corrective action.

Predictive modeling of metrology in semiconductor processes

Implementations described herein generally relate to improving silicon wafer manufacturing. In one implementation, a method includes receiving information describing a defect. The method further includes identifying a critical area of a silicon wafer and determining the probability of the defect occurring in the critical area. The method further includes determining, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The method further includes providing, based on the likelihood, predictive information to a manufacturing system. In some embodiments, corrective action may be taken based on the predictive information in order to improve silicon wafer manufacturing.

Data management and mining to correlate wafer alignment, design, defect, process, tool, and metrology data

A method and system for determining a defect in a critical area in a multi-layer semiconductor substrate is disclosed. A server receives information describing a defect on a first layer of the semiconductor substrate. The server identifies a critical area of a second layer below the first layer of the semiconductor substrate determines a probability of the defect migrating from the first layer to the critical area of the second layer. The server determines, based on the probability, the likelihood of an open or a short occurring as a result of the defect occurring in the critical area. The server provides, based on the likelihood, predictive information to a manufacturing system, wherein corrective action is taken based on the predictive information in order to reduce or eliminate the likelihood of the open or short.

Method of predicting areas of vulnerable yield in a semiconductor substrate

Implementations described herein generally relate method for detecting excursions in time-series traces received from sensors of manufacturing tools. A server extracts one or more time series traces and metrology data collected from one or more sensors associated with one or more manufacturing tools configured to produce a silicon substrate. The server identifies one or more candidate excursions of the one or more time series traces by comparing the one or more time series traces to one or more traces associated with a working reference sensor. The server verifies that a candidate excursion of the one or more candidate excursions is a true excursion based on correlating the one or more time series traces to the metrology data. The server instructs a manufacturing system to take corrective action to remove the selected true excursion.

Semiconductor process control method

A method for detecting a design-impacting defect in an integrated circuit substrate is disclosed. In one implementation, a controller determines a distribution of intended geometric features in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to the intended geometric features. The controller obtains a set of intended contours from the distribution. The controller obtains a set of imaged contours from one or more images of the integrated circuit substrate. The controller compares the set of imaged contours to the set of intended contours to obtain a set of potential design-impacting defects in the intended geometric features. The controller determines a probability that a potential design-impacting defect from the set of potential design-impacting defects is a valid design-impacting defect. The controller takes a corrective action based on the determined probability.

Using design proximity index and effect-to-design proximity ratio to control semiconductor processes and achieve enhanced yield

Implementations described herein generally relate to detecting excursions in intended geometric features in an integrated circuit substrate. In one implementation, a method includes determining a set of suspect contours in a design window of the integrated circuit substrate based on proximities of a plurality of points of interest in the design window to intended geometric features. The method further includes obtaining a set of imaged contours from one or more images of a defect-free integrated circuit substrate. The method further includes comparing the set of imaged contours to the set of suspect contours to obtain a set of potential excursions from the imaged contours. The method further includes determining a probability that a potential excursion from the set of potential excursions is a valid excursion. The method further includes taking a corrective action based on the determined probability.

Data analytics and computational analytics for semiconductor process control

Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, a characteristic of a polishing pad, or a characteristic of a polishing tool are provided. One method includes scanning a specimen with a measurement device during polishing of a specimen to generate output signals at measurement spots on the specimen. The method also includes determining if the output signals are outside of a range of output signals. Output signals outside of the range may indicate that a parameter of the measurement device is out of control limits. In a different embodiment, output signals outside of the range may indicate damage to the specimen. Another method includes scanning a polishing pad with a measurement device to generate output signals at measurement spots on the polishing pad. The method also includes determining a characteristic of the polishing pad from the output signals.

Methods and systems for monitoring a parameter of a measurement device during polishing, damage to a specimen during polishing, or a characteristic of a polishing pad or tool

Systems and methods for characterizing polishing of a specimen are provided. One method includes scanning a specimen with an eddy current device during polishing to generate output signals at measurement spots across the specimen. The method also includes combining a portion of the output signals generated at the measurement spots located within a zone on the specimen. In addition, the method includes determining a characteristic of polishing within the zone from the combined portion of the output signals. In some instances, a zone may include a predetermined range of radial and azimuthal positions on the specimen. In one embodiment, the method may include determining a characteristic of polishing within more than one zone on the specimen. Some embodiments may include determining an additional characteristic of polishing from the characteristic of polishing within more than one zone on the specimen.

Methods and systems for determining a characteristic of polishing within a zone on a specimen from combined output signals of an eddy current device

Systems and methods for detecting a presence of blobs on a specimen are provided. One method may include scanning measurement spots across a specimen during polishing of the specimen. The method may also include determining if the blobs are present on the specimen at the measurement spots. Each of the blobs may include unwanted material disposed upon a contiguous portion of the measurement spots. In some instances, the blobs may include copper. In some embodiments, scanning the measurement spots may include measuring an optical property and/or an electrical property of the specimen at the measurement spots. Another embodiment includes dynamically determining a signal threshold distinguishing a presence of the blobs from an absence of the blobs. An additional embodiment includes determining an endpoint of polishing if, for example, blobs are not determined to be present on the specimen.

Methods and systems for detecting a presence of blobs on a specimen during a polishing process

Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing are provided. One method includes scanning a specimen with a measurement device during polishing to generate output signals at measurement spots on the specimen. The method may also include determining a characteristic of polishing at the measurement spots from the output signals. In addition, the method may include determining relative or absolute locations of the measurement spots on the specimen. The method may further include generating a two-dimensional map of the characteristic at the relative or absolute locations of the measurement spots on the specimen. In some embodiments, the relative locations of the measurement spots may be determined from a representative scan path of the measurement device and an average spacing between starting points on individual scans.

Methods and systems for generating a two-dimensional map of a characteristic at relative or absolute locations of measurement spots on a specimen during polishing

Systems and methods for characterizing a polishing process are provided. One method includes scanning a specimen with two or more measurement devices during polishing. In one embodiment, the two or more measurement devices may include a reflectometer and a capacitance probe. In another embodiment, the two or more measurement devices may include an optical device and an eddy current device. An additional embodiment relates to a measurement device for scanning a specimen during polishing. The device includes a light source and a scanning assembly. The scanning assembly is configured to scan light from the light source across the specimen during polishing. Another measurement device includes a laser light source coupled to a first fiber optic bundle and a detector coupled to a second fiber optic bundle. An additional method includes scanning a specimen with different measurement devices during different steps of a polishing process.

Systems and methods for characterizing a polishing process

Windows configurable to be coupled to a process tool or to be disposed within an opening in a polishing pad are provided. One window includes a first portion and a second portion. The first portion includes a first material, and the second portion includes a second material different than the first. Another window includes a substantially transparent gel. In some instances, the gel includes a triblock copolymer and a plasticizing oil. An additional window includes an upper window, a housing, and a diaphragm. The housing may allow a fluid to flow into and out of a space between the housing and the diaphragm. In another embodiment, a window includes a layer of material coupled to lateral surfaces of the window. In some cases, the window may be disposed within an opening in a polishing pad, and movement of the window within the polishing pad may compress the layer of material.

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Palo Alto, CA, United States of America

Anantha R Sethuraman