Applied Materials, Inc.

Anantha K Subramani

John C Forster

Ashish Goel

Philip Allan Kraus

Rongjun Wang

Hanbing Wu

Kallol Bera

Praburam Gopalraja

Mingwei Zhu

Vivek Agrawal

Nag B Patibandla

Wei W Wang

Keith A Miller

Tza-Jing Gung

Daniel Lee Diehl

Farzad Houshmand

Umesh M Kelkar

Chi Hong Ching

Joseph Michael Ranish

Xianmin Tang

Jianming Fu

Tsutomu Tanaka

Wei D Wang

Bradley Owen Stimson

Prashanth Kothnur

John Joseph Mazzocco

Seshadri Ganguli

Yu Lei

Martin Lee Riker

Xinyu Fu

Dmitry A Dzilno

Vincent E Burkhart

Hong Sheng Yang

Abhishek Chowdhury

Bharath Swaminathan

Srinivas D Nemani

Zheng Xu

Srinivas Gandikota

Aaron Muir Hunter

Kelvin Chan

Muhammad M Rasheed

Thomas B Brezoczky

Hanhong Chen

Fusen E Chen

Hari K Ponnekanti

Xiaoxiong Yuan

Cheng-Hsiung Matt Tsai

Howard E Grunes

Omkaram Nalamasu

Jick M Yu

Srinivas Guggilla

Kartik Ramaswamy

Ludovic Godet

Jennifer Y Sun

Hou Tee Ng

Vijay D Parkhe

Mark Joseph Saly

James D Carducci

Shahid Rauf

Avi Tepman

Paul F Ma

Kirankumar Neelasandra Savandaiah

Charles T Carlson

Kartik Bhupendra Shah

Michael Santiago Cox

Xinliang Lu

Dien-Yeh Wu

Hamid Noorbakhsh

Benjamin B Riordon

Xinhai Han

Adolph Miller Allen

Simon Yavelberg

Ralf Hofmann

Michael N Sugarman

Steven Victor Sansoni

Joung Joo Lee

Swaminathan T Srinivasan

Bencherki Mebarki

Kaushal Gangakhedkar

Lakmal Charidu Kalutarage

Jozef Kudela

Edward P Hammond

Annamalai Lakshmanan

Zhong Qiang Hua

Lei Zhou

Vladimir Knyazik

Michael Sterling Jackson

Xiaodong Wang

Michael Rosenstein

Kasiraman Krishnan

Gilbert Hausmann

Sergio Edelstein

Christopher A Rowland

Donald M Mintz

Jingjing Liu

Sumit Agarwal

Yongmei Chen

Vijaykumar Krithivasan

Peter Satitpunwaycha

David Datong Huo

Some embodiments include a method of depositing a photoresist onto a substrate in a processing chamber. In an embodiment, the method comprises flowing an oxidant into the processing chamber through a first path in a showerhead, and flowing an organometallic into the processing chamber through a second path in the showerhead. In an embodiment, the first path is isolated from the second path so that the oxidant and the organometallic do not mix within the showerhead. In an embodiment, the method further comprises that the oxidant and the organometallic react in the processing chamber to deposit the photoresist on the substrate.

Photoresist deposition using independent multichannel showerhead

Methods and apparatus for substrate processing are described. In some embodiments a showerhead assembly includes a heated showerhead having a heater and a gas diffusion plate coupled to the heater, the gas diffusion plate having a plurality of channels extending through the gas diffusion plate; an ion filter spaced from the heated showerhead, the ion filter having a first side facing the heated showerhead and a second side opposite the first side, the ion filter having a plurality of channels extending through the ion filter; a heat transfer ring in contact between the heated showerhead and the ion filter, the heat transfer ring being thermally conductive and electrically insulative, the heat transfer ring comprised of a plurality of elements spaced from one another along an interface between the heated showerhead and the ion filter; and a remote plasma region defined between the heated showerhead and the ion filter.

Showerhead assembly with heated showerhead

Plasma source assemblies comprising a housing with an RF hot electrode having a body and a plurality of source electrodes extending vertically from the RF hot electrode toward the opening in a front face of the housing are described. Processing chambers incorporating the plasma source assemblies and methods of using the plasma source assemblies are also described.

Symmetric plasma source to generate pie-shaped treatment

Embodiments include a processing tool for processing substrates in a low processing pressure and a high processing pressure. In an embodiment, the processing tool comprises a chamber body and a pedestal in the chamber body. In an embodiment, the pedestal is displaceable, and the pedestal has a first surface and a second surface opposite the first surface. In an embodiment, the processing tool further comprises a first gas port for supplying gasses into the chamber body and a first exhaust positioned above the first surface of the pedestal. In an embodiment, the embodiment further comprises a second gas port for supplying gasses into the chamber body and a second exhaust positioned below the second surface of the pedestal.

Single process volume to perform high-pressure and low-pressure processes with features to reduce cross-contamination

Described are isolation valves, and chamber systems incorporating and methods of using the isolation valves. In some embodiments, an isolation valve may include a valve body and a flapper assembly. The valve body may define a first fluid volume, a second fluid volume, and a seating surface. The flapper assembly may include a flapper disposed inside the valve body having a flapper surface complimentary to the seating surface. The flapper may be pivotable within the valve body to a first position such that the flapper surface may be away from the seating surface to allow fluid flow between the first fluid volume and the second fluid volume. The flapper may be pivotable within the valve body to a second position such that the flapper surface may be proximate the seating surface to form a non-contact seal to restrict fluid flow between the first fluid volume and the second fluid volume.

Isolation valve

Exemplary substrate processing systems may include a chamber body defining a transfer region. The systems may include a first lid plate seated on the chamber body. The first lid plate may define a plurality of apertures through the first lid plate. The systems may include a plurality of lid stacks equal to a number of the plurality of apertures. The systems may define a plurality of isolators. An isolator may be positioned between each lid stack and a corresponding aperture of the plurality of apertures. The systems may include a plurality of annular spacers. An annular spacer of the plurality of annular spacers may be positioned between each isolator and a corresponding lid stack of the plurality of lids stacks. The systems may include a plurality of manifolds. A manifold may be seated within an interior of each annular spacer of the plurality of annular spacers.

Hot showerhead

Apparatus and methods for forming and using internally divisible physical vapor deposition (PVD) process chambers using shutter disks are provided herein. In some embodiments, an internally divisible process chamber may include an upper chamber portion having a conical shield, a conical adaptor, a cover ring, and a target, a lower chamber portion having a substrate support having inner and outer deposition rings, and wherein the substrate support is vertically movable, and a shutter disk assembly configured to internally divide the process chamber and create a separate sealed deposition cavity and a separate sealed oxidation cavity, wherein the shutter disk assembly includes one or more seals disposed along its outer edges and configured to contact at least one of the conical shield, the conical adaptor, or the deposition rings to form the separate sealed deposition and oxidation cavities.

Internally divisible process chamber using a shutter disk assembly

Plasma source assemblies, gas distribution assemblies including the plasma source assembly and methods of generating plasma are described. The plasma source assemblies include a powered electrode with a ground electrode adjacent a first side and a dielectric adjacent a second side. A first microwave generator is electrically coupled to the first end of the powered electrode through a first feed and a second microwave generator is electrically coupled to the second end of the powered electrode through a second feed.

Microwave plasma source for spatial plasma enhanced atomic layer deposition (PE-ALD) processing tool

A cooling chamber comprising a support plate connected to a cryo pump and turbo pump, a clamp ring with a plurality of clamp pads on the bottom thereof where each clamp pad has a beveled surface directed downward and a lift plate to move the clamp ring from a clamp position to a loading position are described. Cluster tools incorporating the cooling chamber and methods of using the cooling chamber are also described.

UHV in-situ cryo-cool chamber

A deposition system, and a method of operation thereof, includes: a cathode; a shroud below the cathode; a rotating shield below the cathode for exposing the cathode through the shroud and through a shield hole of the rotating shield; and a rotating pedestal for producing a material to form a carrier over the rotating pedestal, wherein the material having a non-uniformity constraint of less than 1% of a thickness of the material and the cathode having an angle between the cathode and the carrier.

Deposition system with multi-cathode and method of manufacture thereof

Oxygen controlled PVD AlN buffers for GaN-based optoelectronic and electronic devices is described. Methods of forming a PVD AlN buffer for GaN-based optoelectronic and electronic devices in an oxygen controlled manner are also described. In an example, a method of forming an aluminum nitride (AlN) buffer layer for GaN-based optoelectronic or electronic devices involves reactive sputtering an AlN layer above a substrate, the reactive sputtering involving reacting an aluminum-containing target housed in a physical vapor deposition (PVD) chamber with a nitrogen-containing gas or a plasma based on a nitrogen-containing gas. The method further involves incorporating oxygen into the AlN layer.

Oxygen controlled PVD ALN buffer for GAN-based optoelectronic and electronic devices

An additive manufacturing system includes a platen to support an object to be fabricated, a dispenser assembly positioned above the platen, and an energy source configured to selectively fuse a layer of powder. The dispenser assembly includes a first dispenser, a second dispenser, and a drive system. The first dispenser delivers a first powder in a first linear region that extends along a first axis, and the second dispenser delivers a second powder in a second linear region that extends parallel to the first linear region and is offset from the first linear region along a second axis perpendicular to the first axis. The drive system a drive system moves the support with the first dispenser and second dispenser together along the second axis.

Multiple sequential linear powder dispensers for additive manufacturing

A method includes receiving one or more parameters associated with a plurality of metal plates. The method further includes determining, based on the one or more parameters, a plurality of predicted deformation values associated with the plurality of metal plates. Each of the plurality of predicted deformation values correspond to a corresponding metal plate of the plurality of metal plates. The method further includes causing, based on the plurality of predicted deformation values, the plurality of metal plates to be diffusion bonded to produce a bonded metal plate structure.

Fabricating a recursive flow gas distribution stack using multiple layers

Embodiments of the present disclosure generally relate to a unitary electrical conduit that includes a central conductor, a socket coupled to a first end of the central conductor, a male insert coupled to a second end of the central conductor a dielectric sheath surrounding the central conductor, and an outer conductor surrounding the dielectric sheath, wherein a substantially 90 degree bend is formed along a length thereof.

Seamless electrical conduit

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San Jose, CA, United States of America

Anantha K Subramani