Genus, Inc.

Research Foundation of Suny - New York

Ana R Londergan

Thomas E Seidel

Barry C Arkles

Alain E Kaloyeros

Ed C Lee

Sasangan Ramanathan

Lawrence D Matthysse

Jereld Winkler

A composite film comprised of three layers is formed by ALD on a substrate with a substrate interface surface. A first layer is coupled to the substrate interface surface. The first layer provides adhesion to the substrate interface surface and initiation of layer by layer ALD growth. A second layer is positioned between the first and third layers and provides a conducting diffusion barrier between the substrate and subsequent overlaying film. A third layer has a surface that is configured to provide adhesion and a texture template in preparation for a subsequent overlaying film. The composite engineered barrier structures are applied to interconnect, capacitor and transistor applications.

Methods and procedures for engineering of composite conductive films by atomic layer deposition

Methods and procedures for engineering of composite conductive by atomic layer deposition

An apparatus with a processing chamber subjects a substrate to atomic layer deposition and deposits a film layer. The processing chamber includes at least a first gas switching port. A gas switching manifold is coupled to the processing chamber and configured to mix reactants with a neutral carrier gas and provide gas switching functionality for ALD processes. An upstream gas source and pressure setting apparatus is coupled to the gas switching manifold. The upstream gas source and pressure setting apparatus includes at least a first reactant source, a second reactant source and a neutral gas source. Additionally, the upstream gas source and pressure setting apparatus is configured to provide a cascade of continuing, decreasing pressures.

Method and apparatus for flexible atomic layer deposition

A method to deposit a passivating layer of a first material on an interior reactor surface of a cold or warm wall reactor, in which the first material is non-reactive with one or more precursor used to form a second materials. Subsequently when a film layer is deposited on a substrate by subjecting the substrate to the one or more precursors, in which at least one precursor has a low vapor pressure, uniformity and repeatability is improved by the passivation layer.

Passivation method for improved uniformity and repeatability for atomic layer deposition and chemical vapor deposition

A process for the preparation of cobalt disilicide films comprises chemical vapor deposition (CVD) of cobalt from cobalt tricarbonyl nitrosyl as cobalt source precursor, capping the cobalt layer and annealing to form epitaxial cobalt disilicide on the silicon substrate.

Growing community of inventors

Campbell, CA, United States of America

Ana R Londergan