Jordan Valley Applied Radiation Ltd.

Jordan Valley Semiconductors Ltd.

Jordan Valley Semiconductor Ltd

Jordan Valley Semiconductord Ltd

Amos Gvirtzman

Boris Yokhin

Isaac Mazor

David Berman

Matthew Wormington

Tzachi Rafaeli

Alexander Krohmal

Gennady Openganden

Alexander Krokhmal

Alexander Dikopoltsev

Long Vu

Ami Dovrat

A method for analysis includes directing a converging beam of X-rays toward a surface of a sample having an epitaxial layer formed thereon, and sensing the X-rays that are diffracted from the sample while resolving the sensed X-rays as a function of angle so as to generate a diffraction spectrum including a diffraction peak and fringes due to the epitaxial layer. A characteristic of the fringes is analyzed in order to measure a relaxation of the epitaxial layer.

High-resolution X-ray diffraction measurement with enhanced sensitivity

Apparatus for analysis of a sample includes a radiation source, which is adapted to direct a first, converging beam of X-rays toward a surface of the sample and to direct a second, collimated beam of the X-rays toward the surface of the sample. A motion assembly moves the radiation source between a first source position, in which the X-rays are directed toward the surface of the sample at a grazing angle, and a second source position, in which the X-rays are directed toward the surface in a vicinity of a Bragg angle of the sample. A detector assembly senses the X-rays scattered from the sample as a function of angle while the radiation source is in either of the first and second source configurations and in either of the first and second source positions. A signal processor receives and processes output signals from the detector assembly so as to determine a characteristic of the sample.

Multifunction X-ray analysis system

A method for inspection of a sample having a surface layer. The method includes acquiring a first reflectance spectrum of the sample while irradiating the sample with a collimated beam of X-rays, and processing the first reflectance spectrum to measure a diffuse reflection property of the sample. A second reflectance spectrum of the sample is acquired while irradiating the sample with a converging beam of the X-rays. The second reflectance spectrum is analyzed using the diffuse reflection property so as to determine a characteristic of the surface layer of the sample.

Efficient measurement of diffuse X-ray reflections

Enhancement of X-ray reflectometry by measurement of diffuse reflections

A method for testing a surface includes finding respective first and second critical angles for total external reflection of radiation from an area of the surface at first and second wavelengths. The first and second critical angles are compared to determine an orientation of a tangent to the surface in the area.

Dual-wavelength x-ray monochromator

Apparatus for inspection of a sample includes a radiation source and an array of detector elements arranged to receive radiation from the surface due to irradiation of an area of the surface by the radiation source. The array has a first operative configuration for resolving the received radiation along a first axis perpendicular to the surface, and a second operative configuration for resolving the received radiation along a second axis parallel to the surface. A signal processor processes the signal from the detector array in the two configurations so as to determine a reflectance of the surface as a function of elevation angle relative to the surface and a scattering profile of the surface as a function of azimuthal angle in a plane of the surface.

X-ray reflectometry with small-angle scattering measurement

Dual-wavelength X-ray reflectometry

A method for measurement of critical dimensions includes irradiating a surface of a substrate with a beam of X-rays. A pattern of the X-rays scattered from the surface due to features formed on the surface is detected and analyzed to measure a dimension of the features in a direction parallel to the surface.

Measurement of critical dimensions using X-rays

Apparatus for X-ray analysis of a sample includes an X-ray source, which irradiates the sample, and an X-ray detector device, which receives X-rays from the sample responsive to the irradiation. The device includes an array of radiation-sensitive detectors, which generate electrical signals responsive to radiation photons incident thereon. Processing circuitry of the device includes a plurality of signal processing channels, each coupled to process the signals from a respective one of the detectors so as to generate an output dependent upon a rate of incidence of the photons on the respective detector and upon a distribution of the energy of the incident photons.

X-ray array detector

Apparatus for X-ray microanalysis of a sample includes an X-ray source, which irradiates a spot having a dimension less than 500 &mgr;m on a surface of the sample. A first X-ray detector captures fluorescent X-rays emitted from the sample, responsive to the irradiation, at a high angle relative to the surface of the sample. A second X-ray detector captures X-rays from the spot at a grazing angle relative to the surface of the sample. Processing circuitry receives respective signals from the first and second X-ray detectors responsive to the X-rays captured thereby, and analyzes the signals in combination to determine a property of a surface layer of the sample within the area of the spot.

X-ray microanalyzer for thin films

An x-ray fluorescent analyzer and method for analyzing a sample, including an x-ray beam generator, which generates an x-ray beam incident at a spot on the sample, and creates a plurality of fluorescent x-ray photons. There are a plurality of semiconducting detectors arrayed around the spot so as to capture the fluorescent x-ray photons and in response produce a plurality of electrical pulses suitable for analysis of the sample.

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Moshav Zippori, Israel

Amos Gvirtzman