Asm IP Holding B.v.

Amit Mishra

Paul F Ma

Eric Christopher Stevens

Roghayyeh Lotfi

Jaebeom Lee

Theodorus G M Oosterlaken

Shankar Swaminathan

Bhushan Zope

Methods and systems for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Method and system for depositing molybdenum layers

An apparatus and method for cleaning or etching a molybdenum film or a molybdenum nitride film from an interior of a reaction chamber in a reaction system are disclosed. A remote plasma unit is utilized to activate a halide precursor mixed with an inert gas source to form a radical gas. The radical gas reacts with the molybdenum film or the molybdenum nitride film to form a by-product that is removed from the interior of the reaction chamber by a purge gas.

Apparatus and methods for performing an in-situ etch of reaction chambers with fluorine-based radicals

Methods for forming molybdenum layers on a surface of a substrate and structures and devices formed using the methods are disclosed. Exemplary methods include forming an underlayer prior to forming the molybdenum layer. The underlayer can be used to manipulate stress in the molybdenum layer and/or reduce a nucleation temperature and/or deposition temperature of a step of forming the molybdenum layer.

Method for depositing molybdenum layers using an underlayer

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Tempe, AZ, United States of America

Amit Mishra