Asml Netherlands B.v.

Amandev Singh

Henricus Petrus Maria Pellemans

Teunis Willem Tukker

Gerbrand Van Der Zouw

Richard Johannes Franciscus Van Haren

Patrick Warnaar

Peter Hanzen Wardenier

Andreas Fuchs

Leon Paul Van Dijk

Hilko Dirk Bos

Ilya Malakhovsky

Ronald Henricus Johannes Otten

Maxime D'Alfonso

Subodh Singh

Methods and apparatuses for determining in-plane distortion (IPD) across a substrate having a plurality of patterned regions. A method includes obtaining intra-region data indicative of a local stress distribution across one of the plurality of patterned regions; determining, based on the intra-region data, inter-region data indicative of a global stress distribution across the substrate; and determining, based on the inter-region data, the IPD across the substrate.

Metrology apparatus

Metrology apparatus and methods for inspecting a substrate are disclosed. A source beam of radiation emitted by a radiation source is split into a measurement beam and a reference beam. A first target on the substrate is illuminated with the measurement beam. A second target separated from the substrate is illuminated with the reference beam. First scattered radiation collected from the first target and second scattered radiation collected from the second target are delivered to the detector. The first scattered radiation interferes with the second scattered radiation at the detector. The first target comprises a first pattern. The second target comprises a second pattern, or a pupil plane image of the second pattern. The first pattern is geometrically identical to the second pattern, the first pattern and the second pattern are periodic and a pitch of the first pattern is identical to a pitch of the second pattern, or both.

Method of inspecting a substrate, metrology apparatus, and lithographic system

A measurement system is disclosed in which a first optical system splits an input radiation beam into a plurality of components. A modulator receives the plurality of components and applies a modulation to at least one of the components independently of at least one other of the components. A second optical system illuminates a target with the plurality of components and directs radiation scattered by the target to a detection system. The detection system distinguishes between each of one or more components, or between each of one or more groups of components, of the radiation directed to the detection system based on the modulation applied to each component or each group of components by the modulator.

Measurement system, lithographic system, and method of measuring a target

An inspection apparatus () includes a focus monitoring arrangement ('). Focusing radiation () comprises radiation having a first wavelength and radiation having a second wavelength. Reference radiation and focusing radiation at each wavelength are provided with at least one relative frequency shift so that the interfering radiation detected in the detection system includes a time-varying component having a characteristic frequency. A focus detection system () comprises one or more lock-in detectors (). Operating the lock-in detectors with reference to both the first and second characteristic frequencies allows the arrangement to select which of the first and second focusing radiation is used to determine whether the optical system is in focus. Good quality signals can be obtained from targets of different structure.

Focus monitoring arrangement and inspection apparatus including such an arrangement

A scatterometer is used in a dark-field imaging mode to measure asymmetry-related parameters such as overlay. Measurements of small grating targets are made using identical optical paths, with the target in two orientations to obtain separate measurements of +1 and &#x2212;1 diffraction orders. In this way, intensity scaling differences (tool asymmetry) are avoided. However, additive intensity defects due to stray radiation (ghosts) in the optical system cannot be avoided. Additive intensity issues strongly depend on the ratio between 0th and 1st order diffraction and are therefore strongly substrate (process) dependent. Calibration measurements are made on a few representative target gratings having biases. The calibration measurements are made, using not only different substrate rotations but also complementary apertures. Corrections are calculated and applied to correct asymmetry, to reduce error caused by stray radiation.

Method of measuring asymmetry, inspection apparatus, lithographic system and device manufacturing method

Inspection apparatus () is used for measuring parameters of targets on a substrate. Coherent radiation follows an illumination path (solid rays) for illuminating target (T). A collection path (dashed rays) collects diffracted radiation from the target and delivers it to a lock-in image detector (). A reference beam following a reference path (dotted rays). An acousto-optical modulator () shifts the optical frequency of the reference beam so that the intensity of radiation at the lock-in detector includes a time-varying component having a characteristic frequency corresponding to a difference between the frequencies of the diffracted radiation and the reference radiation. The lock-in image detector records two-dimensional image information representing both amplitude and phase of the time-varying component. A second reference beam with a different shift () follows a second reference path (dot-dash rays). Interference between the two reference beams can be used for intensity normalization.

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Eindhoven, Netherlands

Amandev Singh