Samsung Electronics Co., Ltd.

Alum Jung

Hyeonjin Shin

Keunwook Shin

Sangwon Kim

Jaeyoung Kim

Kyung-Eun Byun

Yunseong Lee

Changseok Lee

Yeonchoo Cho

Minsu Seol

Seunggeol Nam

Dongwook Lee

Hyunjae Song

Seongjun Jeong

Seongjun Park

Jae-Young Kim

Changhyun Kim

Eunkyu Lee

Hyunseok Lim

Janghee Lee

Kyungeun Byun

Jeonil Lee

A method of pre-treating a substrate on which graphene will be directly formed may include pre-treating the substrate using a pre-treatment gas including at least a carbon source and hydrogen.

Method of pre-treating substrate and method of directly forming graphene using the same

A method of forming nanocrystalline graphene according to an embodiment may include: arranging a substrate having a pattern in a reaction chamber; injecting a reaction gas into the reaction chamber, where the reaction gas includes a carbon source gas, an inert gas, and a hydrogen gas that are mixed; generating a plasma of the reaction gas in the reaction chamber; and directly growing the nanocrystalline graphene on a surface of the pattern using the plasma of the reaction gas at a process temperature. The pattern may include a first material and the substrate may include a second material different from the first material.

Method of forming nanocrystalline graphene

A stacked structure may include a first material layer, a two-dimensional material layer on the first material layer, and a second material layer on the two-dimensional material layer. The two-dimensional material layer may include a plurality of holes that each expose a portion of the first material layer. The second material layer may be coupled to the first material layer through the plurality of holes.

Stacked structure including two-dimensional material and method of fabricating the stacked structure

Provided are a graphene structure and a method of forming the graphene structure. The graphene structure includes a substrate and graphene on a surface of the substrate. Here, a bonding region in which a material of the substrate and carbon of the graphene are covalently bonded is formed between the surface of the substrate and the graphene.

Graphene structure and method of forming graphene structure

A method of growing graphene includes forming a carbon monolayer on a substrate by injecting a first reaction gas into a reaction chamber, wherein the first reaction gas includes a first source including a component that is a carbon source and belongs to an electron withdrawing group, and injecting a second reaction gas including a second source into the reaction chamber, wherein the second source includes a functional group that forms a volatile structure by reacting with a component that belongs to an electron withdrawing group. Graphene may be directly grown on a surface of the substrate by repeatedly injecting the first reaction gas and the second reaction gas.

Method of forming graphene

An interconnect structure and an electronic device including the interconnect structure are disclosed. The interconnect structure may include a metal interconnect having a bottom surface and two opposite side surfaces surrounded by a dielectric layer, a graphene layer on the metal interconnect, and a metal bonding layer providing interface adhesion between the metal interconnect and the graphene layer. The metal bonding layer includes a metal material.

Interconnect structure and electronic device employing the same

Provided are a hardmask composition including a structure represented by Formula 1 and a solvent, a method of forming a pattern using the hardmask composition, and a hardmask formed from the hardmask composition. 

Hardmask composition, method of forming pattern using hardmask composition, and hardmask formed from hardmask composition

Example embodiments relate to an energy harvester using triboelectricity, and to an apparatus including the energy harvester. The energy harvester may include a first structure having a first triboelectric material, a second structure having a second triboelectric material, and a closed structure isolating friction surfaces of the first and second triboelectric materials from external environment. The energy harvester may further include a filling material in the closed structure. The filling material may have an electric charge. The filling material may have a viscosity. At least a portion of the closed structure may include an elastic material.

Energy harvester using triboelectricity and apparatus including the same

A method of forming nanocrystalline graphene by a plasma-enhanced chemical vapor deposition process is provided. The method of forming nanocrystalline graphene includes arranging a protective layer on a substrate and growing nanocrystalline graphene directly on the protective layer by using a plasma of a reaction gas. The reaction gas may include a mixed gas of a carbon source gas, an inert gas, and hydrogen gas.

Method of forming nanocrystalline graphene, and device including nanocrystalline graphene

Provided are a method of preparing a graphene quantum dot, a graphene quantum dot prepared using the method, a hardmask composition including the graphene quantum dot, a method of forming a pattern using the hardmask composition, and a hardmask obtained from the hardmask composition. The method of preparing a graphene quantum dot includes reacting a graphene quantum dot composition and an including a polyaromatic hydrocarbon compound and an organic solvent at an atmospheric pressure and a temperature of about 250&#xb0; C. The polyaromatic hydrocarbon compound may include at least four aromatic rings.

Method of preparing graphene quantum dot, hardmask composition including the graphene quantum dot obtained by the method, method of forming patterns using the hardmask composition, and hardmask formed from the hardmask composition

Provided are a hardmask composition, a method of preparing the same, and a method of forming a patterned layer using the hardmask composition. The hardmask composition may include graphene quantum dots, a metal compound, and a solvent. The metal compound may be chemically bonded (e.g., covalently bonded) to the graphene quantum dots. The metal compound may include a metal oxide. The metal oxide may include at least one of zirconium (Zr) oxide, titanium (Ti) oxide, tungsten (W) oxide, or aluminum (Al) oxide. The graphene quantum dots may be bonded to the metal compound by an M&#x2014;O&#x2014;C bond or an M&#x2014;C bond, where M is a metal element, O is oxygen, and C is carbon.

Hardmask composition, method of preparing the same, and method of forming patterned layer by using the hardmask composition

Disclosed are triboelectric generators using surface plasmon resonance. A triboelectric generator includes first and second electrodes spaced apart from each other, first and second electrification layers provided on the first and second electrodes, respectively, and a light source provided to irradiate light onto the second electrification layer. Herein, the second electrification layer includes a metallic material configured to generate surface plasmon resonance due to light of a desired wavelength, and the light source irradiates the light of the desired wavelength configured to generate the surface plasmon resonance, onto the second electrification layer.

Triboelectric generator using surface plasmon resonance

A pellicle composition for a photomask, a pellicle for a photomask, the pellicle for a photomask being formed from the pellicle composition, a method of forming the pellicle, a reticle including the pellicle, and an exposure apparatus for lithography including the reticle are provided. The pellicle composition includes: at least one selected from graphene quantum dots and a graphene quantum dot precursor, the graphene quantum dots having a size of about 50 nm or less; and a solvent.

Pellicle composition for photomask, pellicle for photomask formed from the pellicle composition, method of forming the pellicle, reticle including the pellicle, and exposure apparatus for lithography including the reticle

Example embodiments relate to a triboelectric device including first and second electrodes that are spaced apart from each other, a charging layer provided on the first electrode, a display layer, which is provided between the first and second electrodes, configured to implement an image according to a change in an electric field between the first and second electrodes, and a charging member charged with an opposite polarity to the polarity of the charging layer by contacting the charging layer, wherein the triboelectric device is configured to implement the image according to the change in the electric field between the first and second electrodes in a contact area of the charging member and the charging layer.

Growing community of inventors

Suwon-si, South Korea

Alum Jung