Murata Manufacturing Co., Ltd.

Murata Electronics Oy

Continental Teves, Ag and Company Ohg

Vti Technologies Oy

Nokia Corporation

Altti Torkkeli

Anssi Blomqvist

Antti Iihola

Matti Liukku

Petri Klemetti

Kaisa Nera

Antti Lipsanen

Heikki T Kuisma

Ville-Pekka Rytkönen

Bernhard Schmid

Roland Hilser

Marcus Rinkiö

Tapani Laaksonen

Konsta Hannula

Teemu Vasara

An improved wafer bonding method applying at least one prebonding element that deflects in the out-of-plane direction.

Method for bonding wafers, and a wafer

A microelectromechanical structure including a first wafer structure attached by bonding to a second wafer structure. The first wafer structure includes a build part of silicon wafer material, a through via, and an isolation structure separating the through via from the build part. The through via extends between a first electrical contact and a second electrical contact through the first wafer structure in a first direction. The first electrical contact of the first wafer structure is accessible externally and the second electrical contact of the first wafer structure connects to an internal electrical contact on the second wafer structure. In the first direction, the extent of the isolation structure includes a hollow section and a via fill section where the isolation structure is filled with solid electrically insulating material. enables considerable increase of gap height in MEMS structures.

MEMS structure including a cap with a via

The invention relates to microelectromechanical systems (MEMS), and specifically to a mirror system, for example to be used in LiDAR (Light Detection and Ranging). The MEMS mirror system of the invention uses four suspenders, each of which is connected to the reflector body at two separate connection points which can be independently displaced by piezoelectric actuators. By actuating adjacent and opposite pairs of piezoelectric actuators, the reflector body can be driven to oscillated about two orthogonal axes.

Two-axis MEMS mirror with separated drives

A scanning microelectromechanical reflector system comprising a reflector with a reflector body, a first cavity vertically aligned with the reflector body above the device plane and a second cavity vertically aligned with the reflector body below the device plane. The reflector also comprises a central attachment point located within a central opening in the reflector body. One or more flexures extend from the sidewalls of the central opening to the central attachment point. The flexures allow the central attachment point to remain stationary in the device plane when actuator units tilt the reflector body out of the device plane. The reflector system comprises a central support structure which extends through the cavity to the central attachment point of the reflector.

MEMS reflector with center support

A compact and robust microelectromechanical reflector system that comprises a support, a reflector, a peripheral edge of the reflector including edge points, and suspenders including piezoelectric actuators and suspending the reflector from the support. Two pairs of suspenders are fixed from two fixing points to the support such that in each pair of suspenders, first ends of a pair of suspenders are fixed to a fixing point common to the pair. A first axis of rotation is aligned to a line running though the two fixing points, and divides the reflector to a first reflector part and a second reflector part. In each pair of suspenders, a second end of one suspender is coupled to the first reflector part and a second end of the other suspender is coupled to the second reflector part.

MEMS reflector system

An optical device formed of a mirror wafer, a cap wafer, and a glass wafer. The mirror wafer includes a first layer of electrically conductive material, a second layer of electrically conductive material, and a third layer of electrically insulating material between the first layer and the second layer. A mirror element is formed of the second layer of the mirror wafer, and has a reflective surface in the bottom of a cavity opened into at least the first layer. A good optical quality planar glass wafer can be used to enclose the mirror element when the mirror wafer, cap wafer, and glass wafer are bonded to each other.

Scanning mirror device and a method for manufacturing it

The actuation range obtained with a bending piezoelectric actuator in MEMS mirror system is mechanically amplified by fixing the moving end of the actuator to a suspender which suspends a reflector from a frame. The fixing point lies somewhere between the two ends of the suspender. The actuator and the suspender together form an actuator unit with a greater actuation range than one actuator can obtain by itself. In one embodiment, the suspender is a rigid lever. In another embodiment, the suspender is another bending actuator so that an additional increase in the actuation range can be obtained from the actuating movement of the second actuator.

Scanning MEMS reflector system

A method for manufacturing a micromechanical device layer is performed on a device wafer comprising a single layer of homogenous material. The method comprises patterning a first mask on a first face of the device wafer, the first mask patterning at least lateral dimensions of comb structures and outlines of large device structures. First trenches are etched, the first trenches defining the lateral dimensions of the at least comb structures and outlines of large device structures in a single deep etching process. Recession etching may be used on one or two faces of the device wafer for creating structures at least partially recessed below the respective surfaces of the device wafer. A double mask etching process may be used on one or two faces of the device wafer for creating structures at least partially recessed to mutually varying depths from the respective face of the device wafer.

Manufacturing method of a multi-level micromechanical structure on a single layer of homogenous material

The present invention relates to a micromechanical device comprising a multi-layer micromechanical structure including only homogenous silicon material. The device layer comprises at least a rotor and at least two stators. At least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a first surface of the device layer and at least some of the rotor and at least two stators are at least partially recessed to at least two different depths of recession from a second surface of the device layer.

Multi-level micromechanical structure

A method creates MEMS structures by selectively etching a silicon wafer that is patterned by using a masking layer. The method comprises depositing and patterning a first mask on a silicon wafer to define desired first areas on the wafer to be etched. First trenches are etched on parts of the wafer not covered by the first mask. The first trenches are filled with a deposit layer. A part of the deposit layer is removed on desired second areas to be etched and a remainder is left on areas to function as a second mask to define final structures. Parts of the wafer on the desired second areas is etched, and the second mask is removed. A gyroscope or accelerator can be manufactured by dimensioning the structures.

Method of manufacturing a MEMS structure and use of the method

A method for creating MEMS structures comprises depositing and patterning a first mask on a wafer in order to define desired first areas to be etched in a first trench etching and desired second areas to be etched in a second trench etching. A first intermediate mask is deposited and patterned on top of the first mask. Recession trenches are etched on parts of the wafer. After the first intermediate mask is removed, first trenches are etched with further etching the recession trenches. The first trenches and the recession trenches are filled with a deposit layer. Part of the deposit layer is removed on second areas. A remainder is left on certain areas, to function as a second mask. A third mask is deposited. The third mask defines the final structure. The parts of the wafer on the second areas are etched in the second trench etching. The masks are then removed.

Method of manufacturing a MEMS structure

The invention relates to measuring devices to be used in the measuring of angular velocity and, more precisely, to vibrating micromechanical sensors of angular velocity. In a sensor of angular velocity according to the invention, a mass is supported to the frame of the sensor component by means of an asymmetrical spring structure (), (), (), (), (), () in such a way, that the coupling from one mode of motion to another, conveyed by the spring (), (), (), (), (), (), cancels or alleviates the coupling caused by the non-ideality due to the skewness in the springs or in their support. The structure of the sensor of angular velocity according to the invention enables reliable measuring with good performance, particularly in small vibrating micromechanical solutions for sensors of angular velocity.

Vibrating micromechanical sensor of angular velocity

A method for producing an encapsulation module and/or for encapsulating a micromechanical arrangement, wherein electronic connection provisions are formed from a blank of electrically conductive semiconductor material, by one or more structuring processes and/or etching processes, wherein, in the course of forming the electronic connection provisions, a pedestal of the semiconductor material arises, on which the electronic connection provisions are arranged, wherein the latter are subsequently embedded with an embedding material and the embedding material and/or the semiconductor pedestal are removed after the embedding to an extent such that a defined number of the electronic connection provisions have electrical contacts on at least one of the outer surfaces of the encapsulation module thus produced, wherein upon forming the electronic connection provisions, on the pedestal of the semiconductor material, an insular material hump is formed, on which a plated-through hole is arranged in each case, and which embodies a semiconductor electrode.

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Tuusula, Finland

Altti Torkkeli