Applied Materials, Inc.

Allison Yau

Deenesh Padhi

Ganesh Balasubramanian

Zhijun Jiang

Zeqiong Zhao

Akhil Singhal

Sang-Jin Kim

Daemian Raj Benjamin Raj

Shailendra Srivastava

Nikhil Sudhindrarao Jorapur

Sai Susmita Addepalli

Gregory Eugene Chichkanoff

Abhigyan Keshri

Xinhai Han

Hang Yu

Sanjay G Kamath

Chuan Ying Wang

Chuanxi Yang

Yu Yang

Semiconductor processing systems and method are described that may include flowing deposition precursors into a substrate processing region of a semiconductor processing chamber, where the substrate processing region includes an electrostatic chuck. The methods may further include depositing a seasoning layer on the electrostatic chuck from the deposition precursors to form a seasoned electrostatic chuck. The seasoning layer may be characterized by a dielectric constant greater than or about 3.5. The methods may still further include applying a voltage to the seasoned electrostatic chuck of greater than or about 500 V. The seasoned electrostatic chuck may be characterized by a leakage current of less than or about 25 mA when the voltage is applied.

Systems and methods of seasoning electrostatic chucks with dielectric seasoning films

Exemplary deposition methods may include delivering a silicon-containing precursor and an inert gas to a processing region of a semiconductor processing chamber. The methods may include providing a hydrogen-containing precursor with the silicon-containing precursor and the inert gas. The methods may include forming a plasma of all precursors within the processing region of a semiconductor processing chamber. The methods may include depositing a silicon-containing material on a substrate disposed within the processing region of the semiconductor processing chamber. The processing region may be maintained free of helium delivery during the deposition method.

Helium-free silicon formation

Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 Å.

Profile shaping for control gate recesses

In one example, a process chamber comprises a lid assembly, a first gas supply, second gas supply, a chamber body, and a substrate support. The lid assembly comprises a gas box, a gas conduit passing through the gas box, a blocker plate, and a showerhead. The gas box comprises a gas distribution plenum, and a distribution plate comprising a plurality of holes aligned with the gas distribution plenum. The blocker plate is coupled to the gas box forming a first plenum. The showerhead is coupled to the blocker plate forming a second plenum. The first gas supply is coupled to the gas distribution plenum, and the second gas supply system is coupled to the gas conduit. The chamber body is coupled to the showerhead, and the substrate support assembly is disposed within an interior volume of the chamber body, and is configured to support a substrate during processing.

Dynamic multi zone flow control for a processing system

Exemplary semiconductor structures and processing methods may include forming a first portion of a first semiconductor layer characterized by a first etch rate for an etch treatment, forming a second portion of the first semiconductor layer characterized by a second etch rate that is less than the first etch rate for the etch treatment, and forming a third portion of the first semiconductor layer characterized by a third etch rate that is greater than the second etch rate. The processing methods may further include etching an opening through the first semiconductor layer, where the opening has a height and a width, and where the opening is characterized by a variation in the width between a midpoint of the height of the opening and an endpoint of the opening that is less than or about 5 &#x212b;.

Exemplary methods of semiconductor processing may include flowing a silicon-containing precursor, a nitrogen-containing precursor, and diatomic hydrogen into a processing region of a semiconductor processing chamber. A substrate may be housed within the processing region of the semiconductor processing chamber. The methods may also include forming a plasma of the silicon-containing precursor, the nitrogen-containing precursor, and the diatomic hydrogen. The plasma may be formed at a frequency above 15 MHz. The methods may also include depositing a silicon nitride material on the substrate.

Systems and methods for depositing high density and high tensile stress films

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Mountain View, CA, United States of America

Allison Yau