Cabot Microelectronics Corporation

Alicia Walters

Michael L White

Brian L Mueller

Paul M Feeney

David Schroeder

Lamon Jones

Jeffrey P Chamberlain

Jeffrey Gilliland

Gregory H Bogush

Michael White

The invention provides a chemical-mechanical polishing composition comprising wet-process silica, a stabilizer compound, a potassium salt, a secondary amine compound, and water. The invention further provides a method of polishing a substrate with the polishing composition.

Stable, high rate silicon slurry

The invention provides a polishing system that comprises a liquid carrier, an alkali metal ion, hydroxide ions, and a polishing pad and/or an abrasive. The abrasive can be dispersed in the liquid carrier of the polishing system or bound to the polishing pad. The alkali metal ion can be any univalent group I metal ion and is present in the polishing system at a concentration of about 0.05 M or more. Hydroxide ions are present in a sufficient amount to provide the system with a pH of about 9 or more. The liquid carrier of the polishing system can be any suitable polar solvent, such as water. The invention further provides a polishing method that involves polishing a portion of a substrate with the polishing system beginning about 6 hours or less after the polishing system is prepared.

Preequilibrium polishing method and system

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Naperville, IL, United States of America

Alicia Walters