International Business Machines Corporation

Globalfoundries Inc.

Alfred Wagner

Richard Alan Haight

Peter P Longo

Michael Straight Hibbs

Daniel Peter Morris

Timothy E Neary

Dennis A Schmidt

Jacek G Smolinski

Dennis M Hayden

Brian J Grenon

Raymond E Rochefort

J Peter Levin

Thomas Benjamin Faure

Emily Gallagher

James P Levin

Gregory R McIntyre

Peter H Bartlau

Supratik Guha

Edward William Kiewra

Robert L Sandstrom

Louis M Kindt

Steven J Kirch

The invention relates to a method used in a photolithographic process comprising depositing a film of Atomic Layered Deposition (ALD) AlOon a photomask, subjecting said film of AlOon the photomask to a plasma treatment and then irradiating the deposited film of ALD AlOon the coated photomask at a wavelength of 193 nm.

Protection of photomasks from 193nm radiation damage using thin coatings of ALD Al2O3

A laser apparatus for use in a surgical procedure is disclosed including a housing forming a part of a handpiece and including interior and exterior regions, a laser cavity extending within the interior region of the housing, at least a portion of an operating laser element positioned with the interior region of the housing for generating an operating beam, and a controller to control a focal position of the operating beam to a location above the plane of the tissue for ablation of the tissue by laser induced breakdown thereof.

Laser surgical apparatus and methods of its use minimizing damage during the ablation of tissue using a focused ultrashort pulsed laser beam wherein the slope of fluence breakdown is a function of the pulse width

A method of minimizing the deposition of debris onto a sample being ablated. The method comprises: 1) reducing a laser pulse energy to approximately a threshold level for ablation; 2) focusing the energy using an immersion object lens having a final element and 3) ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase.

Debris minimization and improved spatial resolution in pulsed laser ablation of materials

Methods and structures for extreme ultraviolet (EUV) lithography are disclosed. A method includes determining a phase error correction for a defect in an EUV mask, determining an amplitude error correction for the EUV mask based on both the defect in the EUV mask and the phase error correction, and modifying the EUV mask with the determined phase error correction and the determined amplitude error correction.

Extreme ultraviolet (EUV) multilayer defect compensation and EUV masks

An image of a mask pattern is overlaid on an image of a mask blank annotated with the center location and dimensions of each measured mask defect. Design clips centered at the measured defects are generated with lateral dimensions less than allowable movement of the mask pattern over the mask blank. Each design clip is converted into a binary image including pixels corresponding to defect-activating regions and pixels corresponding to defect-hiding regions. Each pixel region representing the defect-activating region is expanded by laterally biasing peripheries by one half of the lateral extent of the defect located within the corresponding design clip. Biased design clips are logically compiled pixel by pixel to determine an optimal pattern shift vector representing the amount of pattern shift.

Mitigation of mask defects by pattern shifting

A photomask includes a light transmitting substrate and an absorber layer adjacent thereto. The absorber layer includes a silicide, such as molybdenum silicide, patterned into a plurality of features. The surrounding environment is controlled to prevent undesirable growth by oxidation of the absorber layer when the mask is exposed to light while being used to fabricate integrated circuits. In another aspect, the surrounding environment is controlled to encourage desirable growth by oxidation of the absorber layer when the mask is exposed to light.

Techniques for reducing degradation and/or modifying feature size of photomasks

One exemplary aspect of this invention pertains to a method to evaluate an image processing algorithm. The method includes varying a parameter of a model of an imaging system and, for each variation of the parameter, calculating with a data processor a corresponding image of a sample; applying an image processing algorithm to the calculated corresponding images of the sample; and determining an ability of the image processing algorithm to detect the variation in the parameter.

Evaluation of image processing algorithms

In one aspect the invention provides a method for laser induced breakdown of a material with a pulsed laser beam where the material is characterized by a relationship of fluence breakdown threshold (Fth) versus laser beam pulse width (T) that exhibits an abrupt, rapid, and distinct change or at least a clearly detectable and distinct change in slope at a predetermined laser pulse width value. The method comprises generating a beam of laser pulses in which each pulse has a pulse width equal to or less than the predetermined laser pulse width value. The beam is focused above the surface of a material where laser induced breakdown is desired. The region of least confusion (minimum beam waist or average spot size) is above the surface of the material in which laser induced breakdown is desired since the intensity of the beam falls off in the forward direction, preferably the region of the beam at or within the surface is between the region of least confusion and sufficient to remove material and the minimum intensity necessary for laser induced breakdown of the material to be removed, most preferably the region of minimum intensity is disposed at the surface of the material to be removed. The beam may be used in combination with a mask in the beam path. The beam or mask may be moved in the x, y, and Z directions to produce desired features. The technique can produce features smaller than the spot size and Rayleigh range due to enhanced damage threshold accuracy in the short pulse regime.

Method for minimizing sample damage during the ablation of a first biological material disposed on a second biological material using a focused ultrashort pulsed laser beam wherein the slope of fluence breakdown is a function of the pulse width

A method of enhancing the quality of laser ablation by controlling the laser repetition rate during the ablation process, wherein the method enhances the quality of laser ablation of a photomask in order to improve the optical quality thereof. Also provided is a system employing the method of enhancing the quality of laser ablation.

Enhanced quality of laser ablation by controlling laser repetition rate

A method and an apparatus of minimizing the deposition of debris onto a sample being ablated. The method comprising the steps of: 1) reducing a laser pulse energy to approximately a threshold level for ablation; and 2) ablating a region of the sample using a multitude of laser pulses, each pulse being sufficiently separated in time to reduce a concentration of ablation products in a gas phase. An apparatus for ablating a region of a sample with a laser beam. The apparatus comprises: 1) a source providing a pulsed laser beam of a certain energy, the source focusing the laser beam on the sample to ablate a region of the sample; and 2) a device for providing a flowing fluid over the region being ablated to remove the ablation products.

A method of selectively ablating an undesired material from a substrate includes providing a substrate with two regions; providing laser pulses; tuning a wavelength of the laser pulses to match a desired wavelength characteristic of a material and directing the tuned laser pulses onto the substrate; and controlling a pulse duration, wavelength, or both, of the laser pulses to ablate the undesired material without damaging the substrate or any adjacent material. In another embodiment, an apparatus for repairing a defect on a reflective photomask includes a femtosecond pulse width laser; a harmonic conversion cell; a filter for passing a selected EUV harmonic of the laser light; a lens arrangement configured to direct the selected EUV harmonic of the laser light onto the photomask; and a control unit connected to the laser to control an ablation of the defect on the reflective photomask.

Method and apparatus for repair of reflective photomasks

The present technology relates generally to laser ablation, and more particularly pertains to a system and method for eliminating structure and edge roughness, which is produced during the laser ablation of a material. Ablation of materials using a femtosecond laser beam produces a fine scale periodic structure in the ablated region. The structure consists of residual (i.e. unablated material) and is always perpendicular to the polarization direction of the laser beam. By changing the polarization direction during the ablation process, the structure is averaged over many directions and thus eliminated. This eliminates structure and edge roughness in a material caused by the laser ablation of the material. The method is employed to the repairing of photomasks so as to cause the optical quality thereof to be improved.

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Brewster, NY, United States of America

Alfred Wagner