General Electric Company

Alfred Roesch

Mike F Chang

Richard W Kennedy

Julie Y Fichot

David K Hartman

Henri B Assalit

A thermal matching element which exhibits high electrical conductivity and high thermal conductivity is used to join a heat generating semiconductor device with a heat transmissive electrically conductive members. The thermal matching element is independently selected for different directions in the plane of the matching surface.

Thermal stress relieving bimetallic plate

A semiconductor device is described wherein a semiconductor pellet is disposed within a hermetically sealed chamber including a thermally conductive base and a substantially rigid housing, said housing including an open upper chamber in which are disposed electrical terminals and which is filled with a sealing and strengthening layer to substantially increase the strength and hermeticity of the package.

Semiconductor package having strengthening and sealing upper chamber

A p-type region is formed in a semiconductor body by diffusion of aluminum from an aluminum oxide source in an open tube process. Both ceramic aluminum oxide and sapphire sources are described and an inert atmosphere of argon and hydrogen provides stable results. An alternative embodiment provides both the deep diffusion characteristics of aluminum with the high surface concentration of boron by using a boron nitride wafer carrier.

Open tube aluminum oxide disc diffusion

A method for forming a p-conductivity type layer in a semiconductor wafer using aluminum as a diffusion source and which can be carried out in an open diffusion tube is described. A variety of aluminum sources can be employed in an open tube. A stream of essentially oxygen-free inert gas provides transport for the dopant and prevents the entry of potentially contaminating ambient into the tube.

Open tube aluminum diffusion

A method for selectively diffusing a semiconductor body with p-conductivity type impurities utilizing aluminum as a diffusion source and able to be performed in a reuseable open diffusion tube is described. A gas flow is established in the diffusion tube which is essentially an inert gas and includes from one to ten percent oxygen. Simultaneous blanket and selective diffusions may be formed in accordance with this invention by modifying the amount of oxygen in the flow.

Growing community of inventors

Auburn, NY, United States of America

Alfred Roesch