Tegal Corporation

Silicon Valley Bank

Oem Group, LLC

Alferd Cofer

Stephen P DeOrnellas

Leslie G Jerde

Robert C Vail

Kurt A Olson

Paritosh Rajora

A plasma etch reactorincludes a upper electrode, a lower electrode, a peripheral ring electrodedisposed therebetween. The upper electrodeis grounded, the peripheral electrodeis powered by a high frequency AC power supply, while the lower electrodeis powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamberis configured with a solid sourceof gaseous species and a protruding baffle. A nozzleprovides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer. The configuration of the plasma etch reactorenhances the range of densities for the plasma in the reactor, which range can be selected by adjusting more of the power supplies

Plasma etch reactor and method

A method for containing the critical dimension growth of the feature on a semiconductor substrate includes placing a substrate with a hard mask comprised of a reactive metal or an oxidized reactive metal in a chamber and etching the wafer. The method further includes using a hard mask which has a low sputter yield and a low reactivity to the etch chemistry of the process.

Method for using a hard mask for critical dimension growth containment

A method for minimizing the critical dimension growth of a feature on a semiconductor wafer includes performing an etch operation in a reactor and controlling the temperature of the wafer by controlling the pressure of the gas contacting the backside of the wafer and/or providing a heat source such as for example in the chuck or electrode associated with the wafer in order to heat the wafer

Method for minimizing the critical dimension growth of a feature on a semiconductor wafer

A plasma etch reactor includes a upper electrode , a lower electrode , a peripheral ring electrode disposed therebetween. The upper electrode is grounded, the peripheral electrode is powered by a high frequency AC power supply, while the lower electrode is powered by a low frequency AC power supply, as well as a DC power supply. The reactor chamber is configured with a solid source of gaseous species and a protruding baffle . A nozzle provides a jet stream of process gases in order to ensure uniformity of the process gases at the surface of a semiconductor wafer . The configuration of the plasma etch reactor enhances the range of densities for the plasma in the reactor , which range can be selected by adjusting more of the power supplies

A method and apparatus provide for etching a semiconductor wafer using a two step physical etching and a chemical etching process in order to create vertical sidewalls required for high density DRAMs and FRAMs.

Method and apparatus for etching a semiconductor wafer with features having vertical sidewalls

A plasma etch reactor includes a reactor chamber with a grounded upper electrode , a lower electrode which is attached to a high frequency power supply and a low frequency power supply , and a peripheral electrode which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets are used to establish the magnetic field which confines the plasma developed within the reactor chamber . The plasma etch reactor is capable of etching emerging films used with high density semiconductor devices.

Plasma etch reactor and method for emerging films

Plasma etch reactor having a plurality of magnets

A plasma etch reactor,includes a reactor chamber,with a grounded upper electrode,a lower electrode 28 which is attached to a high frequency power supply,and a low frequency power supply,and a peripheral electrode,which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets,are used to establish the magnetic field which confines the plasma developed within the reactor chamber,The plasma etch reactor,is capable of etching emerging films used with high density semiconductor devices.

Method and apparatus for etching a semiconductor wafer with features

A plasma etch reactor 20 includes a reactor chamber 22 with a grounded upper electrode 24, a lower electrode 28 which is attached to a high frequency power supply 30 and a low frequency power supply 32, and a peripheral electrode 26 which is located between the upper and lower electrode, and which is allowed to have a floating potential. Rare earth magnets 46, 47 are used to establish the magnetic field which confines the plasma developed within the reactor chamber 22. The plasma etch reactor 20 is capable of etching emerging films used with high density semiconductor devices.

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Petaluma, CA, United States of America

Alferd Cofer