Kla Tencor Corporation

Alexei Salnik

Lena Nicolaides

Bin-Ming Benjamin Tsai

The capabilities of the Modulated Optical Reflectance (MOR) technology in dopant metrology applications are combined with the sensitivity of the PhotoReflectance (PR) method in the present system to provide stress and other measurements in semiconductor samples. Such combination enhances the measurement performance of MOR based systems in ion implant applications (implantation dose and energy) and expands system capabilities into a new area of structural parameters measurements, for example, strain in silicon wafers.

Combined modulated optical reflectance and photoreflectance system

Samples subject to ion implantation are measured using a modulated optical reflectance system and the results of the measurements are compared to specification ranges for acceptable samples and a plurality of parametric ranges. Each parametric range is associated with a different known type of implantation fault. Measurement results outside of the specification range may be characterized by fault type by comparing the measurement results to a plurality of parametric ranges. In this way, a fault type may be quickly identified and the corresponding source of the fault may be corrected.

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San Jose, CA, United States of America

Alexei Salnik