Nexplanar Corporation

Infineon Technologies Ag

Cabot Microelectronics Corporation

Other

International Business Machines Corporation

Infineon Technologies Aktientgesellschaft

Cmc Materials, Inc.

Alexander William Simpson

Diane Scott

William C Allison

Ping Huang

Paul Andre Lefevre

Richard Frentzel

Laertis Economikos

Leslie M Charns

Peter Wrschka

Robert Kerprich

Peter Lahnor

James P LaCasse

James Richard Rinehart

Daniel C Edelstein

Ravikumar Ramachandran

Richard Anthony Conti

David M Dobuzinsky

Ronald J Schutz

Gill Yong Lee

Kia-Seng Low

Robert Vacassy

Padraic C Shafer

Prakash Chimanlal Dev

Olaf Kuehn

Dinesh N Khanna

Andreas Roemer

Dinesh Khanna

Polishing pads having a polishing surface with continuous protrusions are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions are also described.

Polishing pad having polishing surface with continuous protrusions

Polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are described. Methods of fabricating polishing pads having a polishing surface with continuous protrusions having tapered sidewalls are also described.

Polishing pad having polishing surface with continuous protrusions having tapered sidewalls

Polishing pads with foundation layers and polishing surface layers are described. In an example, a polishing pad for polishing a substrate includes a foundation layer. A polishing surface layer is bonded to the foundation layer. Methods of fabricating polishing pads with a polishing surface layer bonded to a foundation layer are also described.

Polishing pad with foundation layer and polishing surface layer

Homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating homogeneous polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Homogeneous polishing pad for eddy current end-point detection

Polishing pads with a polishing surface layer having an aperture or opening above a transparent foundation layer are described. In an example, a polishing pad for polishing a substrate includes a foundation layer having a global top surface and a transparent region. A polishing surface layer is attached to the global top surface of the foundation layer. The polishing surface layer has a polishing surface and a back surface. An aperture is disposed in the polishing pad from the back surface through to the polishing surface of the polishing surface layer, and aligned with the transparent region of the foundation layer. The foundation layer provides an impermeable seal for the aperture at the back surface of the polishing surface layer. Methods of fabricating such polishing pads are also described.

Polishing pad with polishing surface layer having an aperture or opening above a transparent foundation layer

Polishing pads with concentric or approximately concentric polygon groove patterns are described. Methods of fabricating polishing pads with concentric or approximately concentric polygon groove patterns are also described.

Polishing pad with concentric or approximately concentric polygon groove pattern

Polishing pads for polishing semiconductor substrates using eddy current end-point detection are described. Methods of fabricating polishing pads for polishing semiconductor substrates using eddy current end-point detection are also described.

Polishing pad for eddy current end-point detection

Methods of fabricating polishing pads with end-point detection regions for polishing semiconductor substrates using eddy current end-point detection are described.

Method of fabricating a polishing pad with an end-point detection region for eddy current end-point detection

The invention provides a method of chemically-mechanically polishing a substrate comprising tungsten through use of a composition comprising a tungsten etchant, an inhibitor of tungsten etching, and water, wherein the inhibitor of tungsten polishing is a polymer, copolymer, or polymer blend comprising at least one repeating group comprising at least one nitrogen-containing heterocyclic ring or a tertiary or quaternary nitrogen atom. The invention further provides a chemical-mechanical polishing composition particularly useful in polishing tungsten-containing substrates.

Polishing composition for a tungsten-containing substrate

Method of polishing a tungsten-containing substrate

A polyelectrolyte dispensing polishing pad, a process for its production and a method of polishing, e.g., chemical mechanical polishing (CMP), a substrate such as a semiconductor wafer, are provided. The pad is usable for CMP planarization of an oxide or metal layer on the wafer. The pad has a polishing layer of erodible binder material containing uniformly distributed therein both abrasive particles and a water soluble ionizable electrolyte substance such as a polyelectrolyte, such that during polishing the binder material incrementally erodes and the abrasive particles and electrolyte substance incrementally release into direct contact with the substrate. The electrolyte substance inhibits CMP removal of silicon nitride, e.g., as a stop layer, under an upper oxide or metal layer, such that the upper layer is selectively polished and the CMP stops on the stop layer leaving the latter intact.

Polyelectrolyte dispensing polishing pad

Growing community of inventors

Hillsboro, OR, United States of America

Alexander William Simpson