Cabot Microelectronics Corporation

Cmc Materials, Inc.

Alexander W Hains

Viet Lam

Tina C Li

Brian Reiss

Ji Cui

Sarah Brosnan

Chul Woo Nam

Juyeon Chang

Roman A Ivanov

Steven Kraft

Renhe Jia

Dana Sauter Van Ness

Steven Grumbine

Kevin P Dockery

Benjamin Petro

Kim Long

Brittany Johnson

Galyna Krylova

Brian Sneed

The invention provides a method of chemically mechanically polishing a substrate, especially a substrate comprising boron-doped polysilicon, comprising contacting the substrate with a chemical-mechanical polishing composition comprising an abrasive selected from α-alumina, silica, and a combination thereof, ferric ion, an organic acid, or a combination thereof, and water. The invention also provides a chemical-mechanical polishing composition comprising α-alumina, a nitrogen-containing compound selected from a zwitterionic homopolymer at, a monomeric ammonium salt, and a combination thereof, an organic acid, and water. The invention further provides a chemical-mechanical polishing composition comprising silica, an organic acid, ferric ion, and water.

Composition and method for polishing boron doped polysilicon

A chemical mechanical polishing composition includes a liquid carrier and colloidal silica particles dispersed in the liquid carrier. The colloidal silica particles have a positive charge of at least 10 mV in the liquid carrier and may be characterized as having: (i) a number average aspect ratio of greater than about 1.25 and (ii) a normalized particle size span by weight of greater than about 0.42. The polishing composition may further optionally include an iron-containing accelerator and a tungsten etch inhibitor, for example, when the polishing composition is a tungsten CMP composition.

CMP composition including a novel abrasive

The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and a cationic polymer. This invention additionally provides a method suitable for polishing a dielectric substrate.

Self-stopping polishing composition and method for bulk oxide planarization

The invention provides a chemical-mechanical polishing composition comprising an abrasive, a self-stopping agent, an aqueous carrier, and optionally, a cationic polymer, and provides a method suitable for polishing a substrate.

The invention provides a chemical-mechanical polishing composition comprising (a) wet-process ceria abrasive, (b) a surfactant comprising an amine-containing anchor group and ethylene oxide-propylene oxide stabilizing group, wherein the surfactant has a molecular weight of from about 1000 Daltons to about 5000 Daltons, (c) an aromatic carboxylic acid or heteroaromatic carboxylic acid, and (d) water, wherein the polishing composition has a pH of about 3 to about 6. The invention further provides a method of chemically mechanically polishing a substrate with the inventive chemical-mechanical polishing composition. Typically, the substrates contain silicon oxide.

Polishing composition comprising an amine-containing surfactant

The invention provides a chemical-mechanical polishing composition including first abrasive particles, wherein the first abrasive particles are wet-process ceria particles, have a median particle size of about 40 nm to about 100 nm, are present in the polishing composition at a concentration of about 0.005 wt. % to about 2 wt. %, and have a particle size distribution of at least about 300 nm, a functionalized heterocycle, a pH-adjusting agent, and an aqueous carrier, and wherein the pH of the polishing composition is about 1 to about 6. The invention also provides a method of polishing a substrate, especially a substrate comprising a silicon oxide layer, with the polishing composition.

Polishing composition containing ceria abrasive

Described are compositions useful in methods for chemical-mechanical processing a surface of a substrate, especially a substrate that contains dielectric material, wherein the composition contains cyclodextrin and an alkylamine.

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Aurora, IL, United States of America

Alexander W Hains