Siltronic Ag

Alexander Vollkopf

Andreas Sattler

Karl Mangelberger

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer; an oxygen concentration of the substrate wafer of not less than 5.3&#xd7;10atoms/cmand not more than 6.0&#xd7;10atoms/cm; a resistivity of the substrate wafer of not less than 5 m&#x3a9;cm and not more than 10 m&#x3a9;cm; and the potential of the substrate wafer to form BMDs as a result of a heat treatment of the epitaxially coated semiconductor wafer, where a high density of BMDs has a maximum close to the surface of the substrate wafer.

Semiconductor wafer of monocrystalline silicon and method of producing the semiconductor wafer

Epitaxially coated semiconductor wafers of monocrystalline silicon comprise a p-doped substrate wafer and a p-doped epitaxial layer of monocrystalline silicon which covers an upper side face of the substrate wafer;

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Burghausen, Germany

Alexander Vollkopf