Keithley Instruments, Inc.

Alexander N Pronin

Mary Anne Tupta

Vladimir V Genkin

Joseph A Peters

Andrew Alan Shetler

A test and measurement instrument, includes a user interface, one or more probes configured to connect to a device under test comprising a MOSFET, and one or more processors configured to execute code that causes the one or more processors to: set a target voltage to be measured across the MOSFET, apply a force voltage to the MOSFET, measure a drain current and a drain voltage of the MOSFET with the one or more probes, determine if a difference between the measured drain voltage and the target voltage meets a threshold, when the difference does not meet the threshold, use the measured drain voltage, the measured drain current, and a load resistance to determine a new force voltage value to compensate for the load resistance, set the force voltage to the new force voltage value, and repeat the apply, measure and determine steps as needed.

Correcting for load resistance when making I-V measurements with constant drain voltage on power MOSFETS

A system for testing an integrated-circuit wafer, the system including a probe card having a probe needle and a probe body enclosing a pressure chamber. The probe body includes a unitary sidewall, a first end cap substantially closing a first end of the probe body, except for an outlet passage in the first end cap, and an inlet passage configured to introduce compressed gas into the pressure chamber. The probe needle is within the pressure chamber and is supported by the probe body. A free end of the probe needle extends through the outlet passage. The ends of the probe needle are separated by a first bend in the probe needle, which has a center of curvature that is located between the probe needle and a longitudinal centerline of the unitary sidewall. Methods of using a probe card are also disclosed.

Probe card system for testing an integrated circuit

A testing environment includes a first measuring unit connected to a gate of a MOSFET device and a second measuring unit connected to a drain of the MOSFET device. The testing environment is particularly useful for testing gate charge for MOSFET devices. In a first phase, the gate of the device is driven with electrical current while the drain is driven with a constant voltage. As the MOSFET device turns on, the second measuring unit switches from providing the constant voltage to providing a constant current to the drain of the MOSFET, while measuring the drain voltage. The switching of modes is automatic and occurs without user intervention. After the MOSFET device has been driven to VgsMax by the gate current, all of the relevant data is stored, which may be analyzed and presented to a user in a User Interface or presented in other manner.

Gate charge measurements using two source measure units

A RF and pulse bias tee for use with a source measure unit (SMU) includes a SMU source terminal; a SMU measure terminal; an output terminal; a SMU measure terminal pulse/RF block between the SMU measure terminal and the output terminal; a SMU source terminal high frequency block having two end nodes and an intermediate node, the end nodes being connected between the SMU source terminal and the output terminal; a RF input; a pulse/DC block between the RF input and the output terminal; a pulse input; and a DC block between the pulse input and the intermediate node.

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Twinsburg, OH, United States of America

Alexander N Pronin