Infineon Technologies Ag

Nan Ya Technology Corporation

Qimonda Ag

Alexander Kasic

Peter Weidner

Barbara Schmidt

Pierre-Yves Guittet

Zhen-Long Chen

Elke Gehring

Anita Klee

An apparatus includes an evaluating unit and a peak detection unit. The peak detection unit is configured to determine at least one peak parameter of a peak in a Fourier transformed reflection spectrum of infrared radiation reflected off a sample that may comprise trench structures. The evaluation unit is configured to determine from the at least one peak parameter and from a correction value containing information about an effective refractive index of the sample, a trench parameter of the trench structures.

Apparatus and method for determining trench parameters

An apparatus for monitoring a trench profile of a substrate includes a radiation-emitting unit for irradiating the substrate with infrared radiation. The intensity and/or polarization state of the infrared radiation reflected from the substrate is measured at a multitude of measuring frequencies. An analyzing unit determines the respective reflectance and relative phase change and/or relative amplitude change in relation to the respective measuring frequency. In addition, a reflectance spectrum, a relative phase change spectrum and/or a relative amplitude change spectrum may be obtained. By performing a Fourier transformation of the respective spectrum, a secondary Fourier spectrum is obtained. The secondary Fourier spectrum plots a virtual amplitude against corresponding values of a frequency periodicity that correspond to a substrate depth. Peaks of the virtual amplitude may indicate reflective planes within the substrate at respective depths. Thus, rough sections in the trench profile may be identified without modeling.

Apparatus and method for monitoring trench profiles and for spectrometrologic analysis

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Dresden, Germany

Alexander Kasic