Bruker Jv Israel Ltd.

Jordan Valley Semiconductors Ltd.

Jordan Valley Applied Radiation Ltd.

Alex Tokar

Isaac Mazor

Boris Yokhin

Alex Dikopoltsev

Matthew Wormington

Tzachi Rafaeli

David Berman

Alexander Krokhmal

Dileep Kumar Agnihotri

Moshe Beylin

Fouad Atrash

Olga Ostrovsky

A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF.

Measurement of small features using XRF

A method for X-ray Fluorescence (XRF) analysis includes directing an X-ray beam onto a sample and measuring an XRF signal excited from the sample, in a reference measurement in which the sample includes one or more first layers formed on a substrate, and in a target measurement after one or more second layers are formed on the substrate in addition to the first layers, so as to produce a reference XRF spectrum and a target XRF spectrum, respectively. A contribution of the first layers to the target XRF spectrum is reduced using the reference XRF spectrum. A parameter of at least one of the second layers is estimated using the target XRF spectrum in which the contribution of the first layers has been reduced.

Method for accurately determining the thickness and/or elemental composition of small features on thin-substrates using micro-XRF

A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.

Estimation of XRF intensity from an array of micro-bumps

A method for inspection includes irradiating, with a focused beam, a feature formed on a semiconductor wafer, the feature including a volume containing a first material and a cap made of a second material, different from the first material, that is formed over the volume. One or more detectors positioned at different angles relative to the feature are used to detect X-ray fluorescent photons that are emitted by the first material in response to the irradiating beam and pass through the cap before striking the detectors. Signals output by the one or more detectors at the different angles in response to the detected photons are processed in order to assess a quality of the cap.

X-ray inspection of bumps on a semiconductor substrate

The computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective location. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected location.

Automated selection of X-ray reflectometry measurement locations

A method for analysis of a sample includes irradiating an area of the sample with a polychromatic X-ray beam. X-rays scattered from the sample are detected using a plurality of detectors simultaneously in different, respective positions, whereby the detectors generate respective outputs. Energy-dispersive processing is applied to the outputs of the detectors so as to identify one or more X-ray diffraction lines of the sample.

Multi-detector EDXRD

A method for testing a material applied to a surface of a sample includes directing an excitation beam, having a known beam-width and intensity cross-section, onto a region of the sample. An intensity of X-ray fluorescence emitted from the region responsively to the excitation beam is measured. A distribution of the material within the region is estimated, responsively to the measured intensity of the X-ray fluorescence and to the intensity cross-section of the excitation beam, with a spatial resolution that is finer than the beam-width.

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Haifa, Israel

Alex Tokar