Eugenus, Inc.

Lam Research Corporation

Alex Finkelman

Niloy Mukherjee

Somilkumar J Rathi

Miguel Angel Saldana

The disclosed technology relates generally to semiconductor processing and more particularly to liquid precursor injection apparatus and methods for depositing thin films. A method of injecting a liquid precursor into a thin film deposition chamber comprises delivering a vaporized liquid precursor into the thin film deposition chamber by atomizing the liquid precursor into atomized precursor droplets using a liquid injection unit and vaporizing the atomized precursor droplets into the vaporized liquid precursor in a vaporization chamber. The liquid injector unit and the liquid precursor are such that operating the liquid precursor delivery unit under a lower stability condition, including a first liquid precursor temperature at the liquid injection unit, a first liquid precursor pressure upstream of the liquid precursor injection unit and a first gas pressure downstream of the liquid precursor injection unit, causes a mass flow rate of the liquid precursor to vary by more than 10% relative to an average mass flow rate of the liquid precursor during a first time duration. Delivering the vaporized liquid precursor into the thin film deposition chamber comprises operating the liquid precursor delivery unit under a higher stability condition. The higher stability includes one or more of: a second liquid precursor temperature at the liquid injection unit that is lower than the first liquid temperature; a second liquid pressure upstream of the injection unit that is higher than the first liquid pressure; and a second gas pressure downstream of the liquid injection unit that is higher than the first Gas pressure. The higher stability is such that that the mass flow rate of the liquid precursor varies by less than 10% relative to an average mass flow rate during a second time duration having the same time duration as the first time duration.

Liquid precursor injection for thin film deposition

The disclosed technology generally relates to semiconductor processing and more particularly to placing a substrate in a semiconductor manufacturing equipment for processing, and to apparatuses for placing the substrate in the semiconductor manufacturing equipment. In one aspect, a method of calibrating a process position of a semiconductor substrate in a process chamber comprises securing a calibration substrate on a susceptor in a processing chamber under an open chamber condition using a securing device, wherein securing comprises preventing the substrate from sliding laterally on the susceptor by more than a predefined tolerance from a centered position relative to a susceptor center. The method additionally comprises subjecting the calibration substrate under a process condition different from the open chamber condition. The method additionally comprises transferring the calibration substrate from the susceptor using a robot arm. The method further comprises detecting a position of the calibration substrate and recording coordinates of the robot arm corresponding to the detected position of the calibration substrate. Detection can be conducted on the fly. The securing device can be removed prior to processing substrates.

Systems and methods of placing substrates in semiconductor manufacturing equipment

A method and apparatus for conditioning a polishing pad is described. The method includes steps of moving a cylindrical roller having an abrasive substance affixed to it against a moving polishing pad. The roller may be actively rotated or reciprocated at variable rates, while maintaining a pressure against the polishing pad. The apparatus includes a cylindrical roller attached to one or more pressure application devices mechanically connected to the roller.

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San Jose, CA, United States of America

Alex Finkelman