Jordan Valley Applied Radiation Ltd.

Bruker Technologies Ltd.

Bruker Jv Israel Ltd.

Mellanox Technologies, Ltd.

Jordan Valley Semiconductors Ltd.

Alex Dikopoltsev

Isaac Mazor

Matthew Wormington

Boris Yokhin

Dileep Kumar Agnihotri

Alex Tokar

David Berman

Alexander Krokhmal

Yuri Vinshtein

Alex Krokhmal

Tzachi Rafaeli

Juri Vinshtein

Elad Mentovich

Itshak Kalifa

Sylvie Rockman

Alon Webman

Dalit Kimhi

Moshe Beylin

Sean Jameson

A method for evaluating a sample that includes an array of structural elements. The method includes obtaining a first small angle x-ray scattering (SAXS) pattern for a first angular relationship between the sample and an x-ray beam that exhibits a first collimation value and has a given cross-sectional area on a first side of the sample. A second SAXS pattern is obtained for a second angular relationship between the sample and the x-ray beam, while the x-ray beam exhibits a second collimation value that differs from the first collimation value while maintaining the given cross-sectional area of the x-ray beam on the first side of the sample, wherein the second angular relationship differs from the first angular relationship.

Small-angle X-ray scatterometry

A method for evaluating an array of high aspect ratio (HAR) structures on a sample includes illuminating the sample with an x-ray beam along a first axis parallel to within two degrees to the HAR structures in the array and sensing a first pattern of small angle x-ray scattering (SAXS) scattered from the sample while illuminating the sample along the first axis. The sample is illuminated with the x-ray beam along a second axis that is oblique to the HAR structures in the array, and a second pattern of the SAXS scattered from the sample is sensed while illuminating the sample along the second axis. Information is extracted with respect to the HAR structures based on the first and second patterns.

Small-angle x-ray scatterometry

An x-ray apparatus, that may include a mount that is configured to hold a sample; an x-ray source, that is configured to direct an x-ray beam toward a first side of the sample; a detector, positioned downstream to a second side of the sample, the detector is configured to detect, during a sample measurement period, at least a part of x-rays that have been transmitted through the sample; and an x-ray intensity detector that is positioned, during a beam intensity monitoring period at a measurement position that is located between the x-ray source and the first side of the sample, so as to detect at least a part of the x-ray beam before the x-ray beam reaches the sample.

A method for X-ray scatterometry includes receiving a first distribution of an X-ray beam scattered from a sample. The first distribution exhibits asymmetry with respect to a reference axis. A correction is applied to the first distribution, so as to produce a second distribution in which a level of the asymmetry is reduced relative to the first distribution. One or more parameters of the sample are estimated based on the second distribution.

Method and apparatus for X-ray scatterometry

An electro-optic transceiver module, method of manufacturing, and method of transmitting signals are provided that allow multiple optical signals at different wavelengths (e.g., according to CWDM) to be combined for transmission via a number of optical fibers that is smaller than the number of electrical channels according to which the optical signals were generated. Thus, CWDM may be used in connection with lower-cost VCSEL technology (e.g., as opposed to higher-cost edge-emitting lasers) by providing for wavelength compensation at the VCSEL driver to offset any changes in wavelength that may have otherwise occurred at the VCSELs. In particular, a microcontroller of the electro-optic transceiver module correlates a monitored temperature of the VCSELs to an actual wavelength of the corresponding optical signals transmitted by the respective VCSELS and determined an adjustment in a current supplied by the VCSEL driver to each VCSEL to achieve more precise and consistent wavelengths at the VCSELs.

Electro-optic transceiver module with wavelength compensation

A method for X-ray measurement includes, in a calibration phase, scanning a first X-ray beam, having a first beam profile, across a feature of interest on a calibration sample and measuring first X-ray fluorescence (XRF) emitted from the feature and from background areas of the calibration sample surrounding the feature. Responsively to the first XRF and the first beam profile, a relative emission factor is computed. In a test phase, a second X-ray beam, having a second beam profile, different from the first beam profile, is directed to impinge on the feature of interest on a test sample and second XRF emitted from the test sample is measured in response to the second X-ray beam. A property of the feature of interest on the test sample is computed by applying the relative emission factor together with the second beam profile to the measured second XRF.

Measurement of small features using XRF

Apparatus, including a sample-support that retains a sample in a plane having an axis, the plane defining first and second regions separated by the plane. A source-mount in the first region rotates about the axis, and an X-ray source on the source-mount directs first and second incident beams of X-rays to impinge on the sample at first and second angles along beam axes that are orthogonal to the axis. A detector-mount in the second region moves in a plane orthogonal to the axis and an X-ray detector on the detector-mount receives first and second diffracted beams of X-rays transmitted through the sample in response to the first and second incident beams, and outputs first and second signals, respectively, in response to the received first and second diffracted beams. A processor analyzes the first and the second signals so as to determine a profile of a surface of the sample.

X-ray scatterometry apparatus

A method for inspection includes capturing an optical image of one or more features on a surface of a sample and irradiating an area of the sample containing at least one of the features with an X-ray beam. An intensity of X-ray fluorescence emitted from the sample in response to the irradiating X-ray beam is measured. The optical image is processed so as to extract geometrical parameters of the at least one of the features and to compute a correction factor responsively to the geometrical parameters. The correction factor is applied to the measured intensity in order to derive a property of the at least one of the features.

Estimation of XRF intensity from an array of micro-bumps

The computer-implemented method for inspection of a sample includes defining a plurality of locations on a surface of the sample, irradiating the surface at each of the locations with a beam of X-rays, and measuring an angular distribution of the X-rays that are emitted from the surface responsively to the beam, so as to produce a respective plurality of X-ray spectra. The X-ray spectra are analyzed to produce respective figures-of-merit indicative of a measurement quality of the X-ray spectra at the respective location. One or more locations are selected out of the plurality of locations responsively to the figures-of-merit, and a property of the sample is estimated using the X-ray spectra measured at the selected location.

Automated selection of X-ray reflectometry measurement locations

A method for inspection includes directing a beam of X-rays to impinge upon an area of a sample containing first and second features formed respectively in first and second thin film layers, which are overlaid on a surface of the sample. A pattern of the X-rays diffracted from the first and second features is detected and analyzed in order to assess an alignment of the first and second features.

Overlay metrology using X-rays

A method for testing a material applied to a surface of a sample includes directing an excitation beam, having a known beam-width and intensity cross-section, onto a region of the sample. An intensity of X-ray fluorescence emitted from the region responsively to the excitation beam is measured. A distribution of the material within the region is estimated, responsively to the measured intensity of the X-ray fluorescence and to the intensity cross-section of the excitation beam, with a spatial resolution that is finer than the beam-width.

Detection of dishing and tilting using X-ray fluorescence

A method for inspection of a sample that includes a first layer having a known reflectance property and a second layer formed over the first layer. The method includes directing radiation toward a surface of the sample and sensing the radiation reflected from the surface so as to generate a reflectance signal as a function of elevation angle relative to the surface. A feature due to reflection of the radiation from the first layer is identified in the reflectance signal. The reflectance signal is calibrated responsively to the identified feature and to the known reflectance property of the first layer. The calibrated reflectance signal is analyzed to determine a characteristic of the second layer. Other enhanced inspection methods are disclosed, as well.

X-ray reflectometry of thin film layers with enhanced accuracy

A method for inspection of a sample includes irradiating the sample with a beam of X-rays, measuring a distribution of the X-rays that are emitted from the sample responsively to the beam, thereby generating an X-ray spectrum, and applying a multi-step analysis to the spectrum so as to determine one or more physical properties of a simulated model of the sample. The multi-step analysis includes spectrally analyzing the spectrum so as to determine one or more characteristic frequencies and fitting the simulated model to the spectrum by an iterative optimization process beginning from an initial condition determined by the one or more characteristic frequencies.

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Haifa, Israel

Alex Dikopoltsev