Uchicago Argonne, LLC

Alex B F Martinson

Jeffrey W Elam

Michael J Pellin

Joseph T Hupp

Shannon C Riha

Joseph A Libera

Ulrich Welp

Elijah J Thimsen

The invention is directed to QCM measurements in monitoring ALD processes. Previously, significant barriers remain in the ALD processes and accurate execution. To turn this exclusively dedicated in situ technique into a routine characterization method, an integral QCM fixture was developed. This new design is easily implemented on a variety of ALD tools, allows rapid sample exchange, prevents backside deposition, and minimizes both the footprint and flow disturbance. Unlike previous QCM designs, the fast thermal equilibration enables tasks such as temperature-dependent studies and ex situ sample exchange, further highlighting the feasibility of this QCM design for day-to-day use. Finally, the in situ mapping of thin film growth rates across the ALD reactor was demonstrated in a popular commercial tool operating in both continuous and quasi-static ALD modes.

Micro-balance sensor integrated with atomic layer deposition chamber

A method for preparing a metal sulfide thin film using ALD and structures incorporating the metal sulfide thin film. The method includes providing an ALD reactor, a substrate, a first precursor comprising a metal and a second precursor comprising a sulfur compound. The first and the second precursors are reacted in the ALD precursor to form a metal sulfide thin film on the substrate. In a particular embodiment, the metal compound comprises Bis(N,N'-di-sec-butylacetamidinato)dicopper(I) and the sulfur compound comprises hydrogen sulfide (HS) to prepare a CuS film. The resulting metal sulfide thin film may be used in among other devices, photovoltaic devices, including interdigitated photovoltaic devices that may use relatively abundant materials for electrical energy production.

Atomic layer deposition of metal sulfide thin films using non-halogenated precursors

Methods and systems are provided for synthesis and deposition of chalcogenides (including CuZnSnS). Binary compounds, such as metal sulfides, can be deposited by alternating exposures of the substrate to a metal cation precursor and a chalcogen anion precursor with purge steps between.

Atomic layer deposition of quaternary chalcogenides

A heterojunction photovoltaic cell. The cell includes a nanoporous substrate, a transparent conducting oxide disposed on the nanoporous substrate, a nanolaminate film deposited on the nanoporous substrate surface, a sensitizer dye disposed on a wide band gap semiconducting oxide and a redox shuttle positioned within the layer structure.

Heterojunction photovoltaic assembled with atomic layer deposition

A method and system for preparing a light transmitting and electrically conductive oxide film. The method and system includes providing an atomic layer deposition system, providing a first precursor selected from the group of cyclopentadienyl indium, tetrakis (dimethylamino) tin and mixtures thereof, inputting to the deposition system the first precursor for reaction for a first selected time, providing a purge gas for a selected time, providing a second precursor comprised of an oxidizer, and optionally inputting a second precursor into the deposition system for reaction and alternating for a predetermined number of cycles each of the first precursor, the purge gas and the second precursor to produce the oxide film.

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Woodridge, IL, United States of America

Alex B F Martinson