Lam Research Corporation

Alan Jeffrey Miller

Vahid Vahedi

Qing Xu

Frank Lin

Jaroslaw Walery Winniczek

Thomas A Kamp

Andrew D Bailey, Iii

Harmeet Singh

John Edward Daugherty

Saurabh J Ullal

Jorge Luque

Camelia Rusu

C Robert Koemtzopoulos

Chris Lee

Helene Del Puppo

Shibu Gangadharan

Evelio Sevillano

Chris G N Lee

Fandayani Soesilo

Alex Paterson

Neil M Benjamin

Robert P Chebi

Vijayakumar C Venugopal

Tom A Kamp

David Trussell

Yoko Yamaguchi

Erik A Edelberg

David J Cooperberg

Seongjun Heo

George Stojakovic

Jeff A Bogart

Linda B Braly

Yoko Yamaguchi Adams

Gladys Lo

Yosias Melaku

Sang Joon Yoon

Jin Hwan Ham

David Cooperberg

A cluster tool assembly includes a vacuum transfer module, a process module having a first side connected to the vacuum transfer module. An isolation valve having a first side and a second side, the first side of the isolation valve coupled to a second side of the process module. A replacement station is coupled to the second side of the isolation valve. The replacement station includes an exchange handler and a part buffer. The part buffer includes a plurality of compartments to hold new or used consumable parts. The process module includes a lift mechanism to enable placement of a consumable part installed in the process module to a raised position. The raised position provides access to the exchange handler to enable removal of the consumable part from the process module and store in a compartment of the part buffer. The exchange handler of the replacement station is configured to provide a replacement for the consumable part from the part buffer back to the process module. The lift mechanism is configured to receive the consumable part provided for replacement by the exchange handler and lower the consumable part to an installed position. The replacement by the exchange handler and the process module is conducted while the process module and the replacement station are maintained in a vacuum state.

Systems for removing and replacing consumable parts from a semiconductor process module in situ

Systems and methods for processing a semiconductor wafer includes a plasma processing chamber. The plasma processing chamber includes an exterior, an interior region with a wafer receiving mechanism and a viewport disposed on a sidewall of the plasma processing chamber providing visual access from the exterior to the wafer received on the wafer receiving mechanism. A camera is mounted to the viewport of the plasma processing chamber on the exterior and coupled to an image processor. The image processor includes pattern recognition logic to match images of emerging pattern captured and transmitted by the camera, to a reference pattern and to generate signal defining an endpoint when a match is detected. A system process controller coupled to the image processor and the plasma processing chamber receives the signal from the image processor and adjusts controls of one or more resources to stop the etching operation.

Methods for detecting endpoint for through-silicon via reveal applications

Systems and methods for detecting endpoint for through-silicon via reveal applications

A method is provided for etching silicon in a plasma processing chamber, having an operating pressure and an operating bias. The method includes: performing a first vertical etch in the silicon to create a hole having a first depth and a sidewall; performing a deposition of a protective layer on the sidewall; performing a second vertical etch to deepen the hole to a second depth and to create a second sidewall, the second sidewall including a first trough, a second trough and a peak, the first trough corresponding to the first sidewall, the second trough corresponding to the second sidewall, the peak being disposed between the first trough and the second trough; and performing a third etch to reduce the peak.

Method for achieving smooth side walls after Bosch etch process

A method for etching features into an etch layer in a plasma processing chamber, comprising a plurality of cycles is provided. Each cycle comprises a deposition phase and an etching phase. The deposition phase comprises providing a flow of deposition gas, forming a plasma from the deposition gas in the plasma processing chamber, providing a first bias during the deposition phase to provide an anisotropic deposition, and stopping the flow of the deposition gas into the plasma processing chamber. The etching phase, comprises providing a flow of an etch gas, forming a plasma from the etch gas in the plasma processing chamber, providing a second bias during the etch phase, wherein the first bias is greater than the second bias, and stopping the flow of the etch gas into the plasma processing chamber.

Method for providing high etch rate

A method for etching a polysilicon gate structure in a plasma etch chamber is provided. The method initiates with defining a pattern protecting a polysilicon film to be etched. Then, a plasma is generated. Next, substantially all of the polysilicon film that is unprotected is etched. Then, a silicon containing gas is introduced and a remainder of the polysilicon film is etched while introducing a silicon containing gas. An etch chamber configured to introduce a silicon containing gas during an etch process is also provided.

Method to improve profile control and N/P loading in dual doped gate applications

Broadly speaking, methods and an apparatus are provided for removing an inorganic material from a substrate. More specifically, the methods provide for removing the inorganic material from the substrate through exposure to a high density plasma generated using an inductively coupled etching apparatus. The high density plasma is set and controlled to isotropically contact particular regions of the inorganic material to allow for trimming and control of a critical dimension associated with the inorganic material.

Method for hard mask CD trim

Methods of processing a substrate so as to protect an active area include positioning a substrate in an inductively coupled plasma processing chamber, supplying process gas to the chamber, generating plasma from the process gas and processing the substrate so as to protect the active area by maintaining a plasma potential of about 5 to 15 volts at the substrate surface and/or passivating the active area by using a siliane-free process gas including at least one additive effective to form a protective layer on the active area of the substrate wherein the protective layer includes at least one element from the additive which is already present in the active area.

Photoresist stripping chamber and methods of etching photoresist on substrates

In a plasma processing system, including a plasma processing chamber, a method of optimizing the etch resistance of a substrate material is described. The method includes flowing pre-coat gas mixture into the plasma processing chamber, wherein the pre-coat gas mixture has an affinity for a etchant gas flow mixture; striking a first plasma from the pre-coat gas mixture; and introducing a substrate comprising the substrate material. The method also includes flowing the etchant gas mixture into the plasma processing chamber; striking a second plasma from the etchant gas mixture; and etching the substrate with the second plasma. Wherein the first plasma creates a pre-coat residual on a set of exposed surfaces in the plasma processing chamber, and the etch resistance of the substrate material is maintained.

Methods and apparatus for the optimization of etch resistance in a plasma processing system

A method for processing recess etch operations in substrates is provided including forming a hard mask over the substrate and etching a trench in the substrate using the hard mask, and forming a dielectric layer over the hard mask and in the trench, where the dielectric layer lines the trench. A conductive material is then applied over the dielectric layer such that a blanket of the conductive material lies over the hard mask and fills the trench, and the conductive material is etched to substantially planarize the conductive material. The etching of the conductive material triggers an endpoint just before all of the conductive material is removed from over the dielectric layer that overlies the bard mask. The conductive material is recess etched to remove the conductive material over the dielectric layer that overlies the hard mask and removes at least part of the conductive material from within the trench.

Method for planarization etch with in-situ monitoring by interferometry prior to recess etch

A semiconductor manufacturing process provides a shallow trench in a silicon layer using a silicon containing etch gas to provide controlled top and/or bottom rounding of the trench or to enhance profile control and/or critical dimension control by controlled deposition across a semiconductor substrate. A gate structure can be etched on a semiconductor substrate using a silicon containing gas to enhance profile control and/or critical dimension control.

Use of silicon containing gas for CD and profile feature enhancements of gate and shallow trench structures

An apparatus and method for etching a feature in a wafer with improved depth control and reproducibility is described. The feature is etched at a first etching rate and then at a second etching rate, which is slower than the first etching rate. An optical end point device is used to determine the etching depth and etching is stopped so that the feature has the desired depth. Two different etching rates provides high throughput with good depth control and reproducibility. The apparatus includes an etching tool in which a chuck holds the wafer to be etched. An optical end point device is positioned to measure the feature etch depth. An electronic controller communicates with the optical end point device and the etching tool to control the tool to reduce the etch rate part way through etching the feature and to stop the etching tool, so that that the feature is etched to the desired depth.

Apparatus and method for controlling etch depth

A method or process for etching a trench in an IC structure is disclosed. The IC structure might be comprised of a plurality of different component materials arranged proximate to one another, all of which need to be etched down to a target level. A first etching chemistry is applied which preferentially etches a one type of component material. A second etching chemistry is applied which preferentially etches another type of component material. The method or process toggles back and forth between the etching chemistries until the target level is reached. The toggling techniques serves to maintain the profiles of the different component materials. One component material might also be embedded, as a collar or otherwise, around another component material. The toggling technique can serve to modulate the height, level, or shape of one material relative to another material. The toggling steps can be performed in situ or ex situ. The toggling technique can be used with different mask materials, including a photoresist or a hardmask over the IC structure.

In situ and ex situ hardmask process for STI with oxide collar application

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Moraga, CA, United States of America

Alan Jeffrey Miller