International Business Machines Corporation

Globalfoundries Inc.

Alan Edward Rosenbluth

Kafai Lai

Kehan Tian

David Osmond Melville

Maharaj Mukherjee

Gregg M Gallatin

Mark Alan Lavin

Tadanobu Inoue

Shlomo Shlafman

Dov Ramm

Emanuel Gofman

Masaharu Sakamoto

Saeed Reza Bagheri

Derek Brian Dove

Fuad Elias Doany

Kei-Hsiung Yang

Rama Nand Singh

Minhua Lu

Janusz S Wilczynski

Kenneth C Ho

Dirk Pfeiffer

Thomas Mario Cipolla

Jaione Tirapu Azpiroz

George L Chiu

Hidemasa Muta

David O S Melville

Jean-Claude Andre Chastang

Timothy A Brunner

Fook-Luen Heng

Nakgeuon Seong

Ronald L Gordon

Jaione Tirapu-Azpiroz

Kathryn Barr Kirtley

Rajiv V Joshi

Evan G Colgan

Ying Liu

Russell Alan Budd

Gareth Geoffrey Hougham

Alessandro Cesare Callegari

James A Culp

Praveen Chaudhari

Shui-Chih Alan Lien

James Patrick Doyle

James Andrew Lacey

Scott Marshall Mansfield

Ioana C Graur

Christopher J Progler

Laura Louise Kosbar

Eileen Ann Galligan

James Henry Glownia

Saibal Mukhopadhyay

Jonathan Lee

Marc Alan Szeto-Millstone

Andreas Waechter

Masahura Sakamoto

Jed Hickory Rankin

Dongbing Shao

Christopher P Ausschnitt

Michael Straight Hibbs

Jared Barney Hertzberg

Maria Gabrani

Frances Anne Houle

Alexey Y Lvov

Douglas S Goodman

Norman Bobroff

William Dinan Hinsberg

Burn J Lin

Dario Gil

Scott Josef Bukofsky

Emily Gallagher

John Allen Hoffnagle

Pardeep Kumar

Daniel Lawrence Ostapko

David L DeMaris

Jin-Fuw Lee

Ian P Stobert

Martha Inez Sanchez

Donis G Flagello

Ramya Viswanathan

Francisco Barahona

Joseph Edward Gortych

Zheng G Chen

Raymond E Tibbetts

Samit Barai

Anne M Moruzzi

Laszlo Ladanyi

Daniele P Scarpazza

Ramana Murthy Pusuluri

Alfred K K Wong

A method of frequency allocation in a quantum device having a plurality of qubits includes determining a plurality of frequency groups based on a configuration of the plurality of qubits; determining, for each of the plurality of qubits, a qubit frequency; assigning a frequency group from the plurality of frequency groups to each of the plurality of qubits based on each respective qubit frequency; determining for at least one qubit of the plurality of qubits whether a frequency collision exists between the at least one qubit and neighboring qubits in the plurality of qubits based on the qubit frequency of the at least one qubit and at least one qubit frequency of the neighboring qubits; and adjusting the frequency of the at least one qubit based on the determination whether a frequency collision exists between the at least one qubit and said neighboring qubits in the plurality of qubits. A non-transitory computer-readable medium for frequency allocation in a quantum device includes instructions to perform the method.

Color-map method to eliminate qubit frequency crowding in a quantum computing chip

Disclosed are mask definition tools, apparatus, methods, systems and computer program products configured to process data representing a semiconductor fabrication mask. A non-limiting example of a method includes performing a decomposition process on a full Transmission Cross Coefficient (TCC) using coherent optimal coherent systems (OCS) kernels; isolating a residual TCC that remains after some number of coherent kernels are extracted from the full TCC; and performing at least one decomposition process on the residual TCC using at least one loxicoherent system. The loxicoherent system uses a plurality of distinct non-coherent kernel functions and is a compound system containing a paired coherent system and an incoherent system that act in sequence. An output of the coherent system is input as a self-luminous quantity to the incoherent system, and the output of the incoherent system is an output of the loxicoherent system.

Tool to provide integrated circuit masks with accurate dimensional compensation of patterns

A method for correcting a lithographic pattern includes selecting, by a processor, first stage input factors for utilization with a first computer-implemented model. The processor measures pattern data from existing measured dimensions of a semiconductor to obtain values for the first stage input factors and the first model against the measured pattern data. The processor applies the calibrated first model to predict printed dimensions and the printed dimensions from applying the calibrated first model comprise residuals. The processor establishes, based on the residuals, second stage input factors for a second model and calibrates the second model against the measured pattern data to predict deviations of the printed dimensions from the printed dimensions from the first stage input factors by utilizing the second stage input factors. The method produces predicted printed dimensions of a lithographic pattern by using the second model to revise the printed dimensions of the first model.

Figurative models calibrated to correct errors in process models

A system and method for optimizing (designing) a mask pattern, in which SMO and OPC are collaboratively used to exert a sufficient collaborative effect or are appropriately used in different manners. The method for designing a source and a mask for lithography includes a step (S) of selecting a set of patterns; a step of performing source mask optimization (SMO) using the set of patterns, under an optical proximity correction (OPC) restriction rule which is used for selectively restricting shifting of an edge position of a polygon when OPC is applied to the set of patterns; and a step (S, S) of determining a layout of the mask for lithography, by applying OPC to all patterns constituting the mask for lithography using the source optimized through the SMO.

Method and program product for designing source and mask for lithography

Methods and systems for determining a source shape, a mask shape and a target shape for a lithography process are disclosed. One such method includes receiving source, mask and target constraints and formulating an optimization problem that is based on the source, mask and target constraints and incorporates contour-based assessments for the target shape that are based on physical design quality of a circuit. Further, the optimization problem is solved by integrating over process condition variations to simultaneously determine the source shape, the mask shape and the target shape. In addition, the determined source shape and mask shape are output.

Source, target and mask optimization by incorporating contour based assessments and integration over process variations

In one embodiment, a source mask optimization (SMO) method is provided that includes controlling bright region efficiency during at least one optical domain step. The bright region efficiency being the proportion of the total transmitted light that is transferred to bright areas of a target pattern. The optical domain intermediate solution provided by the at least one optical domain step may then be binarized to obtain an initial spatial domain solution with a controlled MEEF (Mask Error Enhancement Factor). The MEEF is controlled during at least one spatial domain step that optimizes the initial spatial domain solution.

Synthesizing low mask error enhancement factor lithography solutions

A method includes selecting a mask blank for lithographically forming a desired pattern of main features to be printed onto a wafer by projection lithography. First locations are identified in the desired pattern, the first locations being those which would produce on the wafer images impacted by phase distortions of actinic light through openings in the desired pattern. Second locations in the desired pattern are identified for the insertion of orthoedges. The orthoedges are provided to contribute an additional amplitude of actinic light to the images impacted by phase distortions when the actinic light is projected onto the wafer. The orthoedges are then inserted into the desired pattern at the second locations at orientations such that the orthoedges provide a quadrature component to the additional amplitude of actinic light having an opposite sign to the quadrature component of the actinic light producing the phase distortions. Finally, the mask blank is formed lithographically with the desired pattern modified through the insertion of the orthoedges.

Mask that provides improved focus control using orthogonal edges

Source, target and mask optimization by incorporating countour based assessments and integration over process variations

A method, an article of manufacture, and a system for designing a mask. The method for designing a mask is implemented by a computer device having a memory, a processor device communicatively coupled to the memory, and a module configured to carry out the method including the steps of: generating an optical domain representation from a design pattern and an imaging light; and optimizing the optical domain representation under a constraint that values of negative excursions at predetermined evaluation points must be greater than or equal to predetermined negative threshold values assigned to the predetermined evaluation points; where: the optical domain representation is a variable representation of a wavefront; the imaging light is light that is transmitted through the mask; the negative excursions are in an object domain representation of the optical domain representation; and the predetermined evaluation points are in the object domain representation.

Mask design method, program, and mask design system

Systems and methods for optimizing a source shape and a mask shape for a lithography process are disclosed. One such method includes performing a mask optimization for the lithography process in accordance with a set of parameters including at least one variable representation, at least one objective and problem constraints. Further, a light source optimization for the lithography process is performed in accordance with the set of parameters. In addition, a joint light source-mask optimization is performed in accordance with the set of parameters. The method further includes iterating at least one of the mask optimization or the light source optimization by changing at least one of the variable representation, the objective or the problem constraints to maximize a common process window for the lithography process.

Source-mask optimization for a lithography process

Various embodiments include approaches for calibrating a model for a lithographic printing process. Some embodiments include a computer-implemented method for calibrating a model for a lithographic printing process. Some approaches include: identifying parameters for a model of the lithographic printing process; assembling a population of design content including potentially printable features that can be printed by the lithographic printing process; preparing at least one matrix expressing a similarity between the potentially printable features in terms of the parameters for the model; determining a manifold of smaller dimensionality than the parameters for the model which exhibit maximum variation in similarity within the at least one matrix; and selecting a sample dataset of the potentially printable features from the manifold.

Printing process calibration and correction

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Yorktown Heights, NY, United States of America

Alan Edward Rosenbluth