Imec Vzw

Katholieke Universiteit Leuven

Alain Moussa

Gian Francesco Lorusso

Danilo De Simone

Joren Severi

Anne-Laure Charley

Mohamed Saib

The present disclosure relates to the determination of a pattern height of a pattern, which has been produced with extreme ultraviolet (EUV) lithography in a resist film. The determination is performed by using an electron beam (e-beam) system, in particular, by using a scanning electron microscope (SEM). In this respect, the disclosure provides a device for determining the pattern height, wherein the device comprising a processor. The processor is configured to obtain a SEM image of the pattern from an SEM. Further, the processor is configured to determine a contrast value related to the pattern based on the obtained SEM image. Subsequently, the processor is configured to determine the pattern height based on calibration data and the determined contrast value.

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Leuven, Belgium

Alain Moussa