Adv Antest Corporation

Fujitsu Corporation

Fujuitsu Limited

Akiyoshi Tsuda

Kazushi Ishida

Hiroshi Yasuda

Hitoshi Tanaka

Yoshihisa Ooae

Nobuyuki Yasutake

Masaki Kurokawa

Kenichi Kawakami

Tatsuro Ohkawa

Kenji Abe

Hideki Nasuno

Hirofumi Hayakawa

A sample holder to be disposed between an electrostatic chuck and a sample smaller than the upper surface of the electrostatic chuck is provided, the sample holder including: a base plate formed in the same size as the upper surface of the electrostatic chuck; a sample placement portion located on the upper surface of the base plate, and designed to place the sample thereon; and a circumferential portion being a portion of the upper surface of the base plate other than the sample placement portion, and having a conductive material exposed to the outside.

Sample holder of electron beam exposure apparatus and electron beam exposure method using the same

There is provided an electron beam detector including an electron beam scatterer which is disposed at a predetermined distance below a shield including a plurality of openings formed therein, and a beam detection element disposed at a predetermined distance below the scatterer and configured to convert an electron beam into an electric signal. In the electron beam detector, the scatterer is disposed at an equal distance from any of the openings in the shield, and the beam detection element is disposed at an equal distance from any of the openings in the shield. Thus, the electron beam detector can suppress a variation in detection sensitivity depending on the position of the opening.

Electron beam detector, electron beam processing apparatus, and method of manufacturing electron beam detector

With using one scanning stage 19 where a plurality of wafers 16A to 16E is mounted through wafer holders 20A to 20E and balancing stage 21 disposed below scanning stage 19, scanning stage 19 is scanned based on exposure data common to a plurality of charged particle beam exposure apparatus 10A to 10E, and balancing stage 21 is scanned so that barycenter G of scanning stage 19 and balancing stage 21 becomes a fixed point. The positions of reflecting mirrors 70L and 70R secured to stage 19 are measured and based on their values, the expansion/contraction ratio of stage 19 and the positions of samples 16A to 16E are calculated to obtain deviation of the positions from target positions. Stage 19 is modeled such that rigid areas 19A to 19E are loosely connected, and for each area, the positions of three points are measured to calculate deviation of the exposure target position due to rotation of each ridged area. These deviations are corrected by deflectors 18A to 18D.

Method and system for charged particle beam exposure

Method for charged particle beam exposure with fixed barycenter through

The present invention is a charged particle beam exposure apparatus comprising: a column portion in which an optical system for a charged particle beam is disposed; a chamber to be coupled with the column portion; a movable sample stage located in the chamber for mounting a sample thereon; and a stage position measurement device, having an optical path for measurement, along which a laser beam having a predetermined frequency is projected and is reflected by reflection means provided on the sample stage, and an optical path for reference, which in length almost equals a distance between a starting point of the optical path for measurement and the origin of the optical system in the column portion and for which the length is increased at a rate substantially consistent with a thermal expansion coefficient as material of the chamber is expanded, for measuring a change in position of the sample stage by employing a laser optical signal for measurement, which passes along the optical path for measurement, and a reference laser signal, which passes along the optical path for reference.

Charged particle beam exposure apparatus

Growing community of inventors

Tokyo, Japan

Akiyoshi Tsuda