Tokyo Electron Limited

Akitoshi Harada

Yen-Ting Lin

Koichiro Inazawa

Shigeru Yoneda

Takamitsu Takayama

Chih-Hsuan Chen

Ju-Chia Hsieh

Masanori Sato

Hidetoshi Hanaoka

Shin Okamoto

Junichi Sasaki

Ryo Nonaka

Hideaki Yakushiji

Yoshinori Suzuki

Natsuki Yabumoto

A method of controlling a temperature is provided. In the method, a plasma process is performed in a processing chamber on an object to be processed placed on an electrostatic chuck configured to have its temperature adjustable. The electrostatic chuck is controlled to have a first temperature. The temperature of the electrostatic chuck is controlled in a step-by-step manner so as to change from the first temperature to a second temperature that is lower than the first temperature after performing the plasma process. An inside of the processing chamber is purged with an inactive gas after performing the plasma process.

Method of controlling temperature and plasma processing apparatus

A plasma processing method is provided that includes a step of loading a substrate into a chamber where a plasma process is to be executed, a step of applying a high frequency bias power that has a lower frequency than a high frequency excitation power for plasma excitation to a mounting table on which the substrate is mounted, and a step of applying a DC voltage to an electrostatic chuck configured to electrostatically attract the substrate that is mounted on the mounting table. The step of applying the DC voltage is performed after the step of applying the high frequency bias power.

Plasma processing method

A plasma processing apparatus includes: a process chamber configured to accommodate a substrate such that a plasma process is performed in the process chamber; a pedestal on which the substrate is disposed; an opposite electrode opposite to the pedestal; a first radio-frequency power source configured to supply a first radio-frequency power for generating plasma on one of the pedestal and the opposite electrode; a second radio-frequency power source configured to supply a second radio-frequency power for generating a bias voltage on the pedestal, the second radio-frequency power being lower in frequency than the first radio-frequency power; a direct-current power source configured to supply a direct-current voltage to the opposite electrode; and a controller configured to control the first radio-frequency power source, the second radio-frequency power source, and the direct-current power source.

Plasma processing apparatus and particle adhesion preventing method

A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a metal silicide film, with plasma of the fluorine-containing gas (process S). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a metal-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing metal, which is obtained by reducing the metal-containing material in the reduction process, with plasma of the oxygen-containing gas (process S).

Plasma processing method and plasma processing apparatus

A plasma processing method performs an etching process (S) of supplying a first fluorine-containing gas into a plasma processing space and etching a target substrate with plasma of the first fluorine-containing gas. Then, the plasma processing method performs a carbon-containing material removal process (S) of supplying an Ogas into the plasma processing space and removing, with plasma of the Ogas, a carbon-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process. Thereafter, the plasma processing method performs a titanium-containing material removal process (S) of supplying a nitrogen-containing gas and a second fluorine-containing gas into the plasma processing space and removing, with plasma of the nitrogen-containing gas and the second fluorine-containing gas, the titanium-containing material deposited on the member after the etching process.

A plasma processing method of the present disclosure includes attaching a Si-containing material or a N-containing material to an electrostatic chuck that is provided in a processing container and attached with a reaction product containing C and F, in a state where a workpiece is not mounted on the electrostatic chuck; adsorbing the workpiece by the electrostatic chuck attached with the Si-containing material or the N-containing material when the workpiece is carried into the processing container; processing the workpiece with plasma; and separating the workpiece processed with plasma from the electrostatic chuck attached with the Si-containing material or the N-containing material.

A plasma processing method performs an etching process of supplying a fluorine-containing gas into a plasma processing space and etching a target substrate, in which a silicon oxide film or a silicon nitride film is formed on a surface of a nickel silicide film, with plasma of the fluorine-containing gas (process S). Then, the plasma processing method performs a reduction process of supplying a hydrogen-containing gas into the plasma processing space and reducing, with plasma of the hydrogen-containing gas, a nickel-containing material deposited on a member, of which a surface is arranged to face the plasma processing space, after the etching process (process S). Thereafter, the plasma processing method performs a removal process of supplying an oxygen-containing gas into the plasma processing space and removing nickel, which is obtained by reducing the nickel-containing material in the reduction process, with plasma of the oxygen-containing gas (process S).

An etching method which makes it possible to obtain a desired etching shape with ease, and a computer-readable storage medium storing a program for implementing the method. The etching method is executed by a substrate processing apparatus that performs plasma processing on a semiconductor wafer by plasma. The apparatus comprises a substrate accommodating chamber for accommodating the semiconductor wafer which has an oxide film and a resist film formed on the oxide film, and an upper electrode plate disposed in the substrate accommodating chamber and exposed in a processing space in the substrate accommodating chamber. At least part of the upper electrode plate is formed of a silicon-containing material. The upper electrode plate is sputtered by plasma, and the oxide film is etched by plasma.

Etching method and storage medium

An etching method comprises a step of forming a via hole structure based on a photoresist film layer () for forming a wiring pattern, a silicon oxide film layer () which is a hard mask layer formed under the photoresist film, and an organic Low-k film layer () formed under the hard mask layer, wherein in the step, the organic film layer and the organic Low-k film layer are etched by using a mixture gas of Ngas, Hgas, and a CF gas.

Etching method

This semiconductor device includes a substrateto be processed, a first insulation filmarranged at a designated position on the substrateto have a via-hole, an organic filmformed on the first insulation filmand a second insulation filmformed on the organic film. Both of the organic filmand the second insulation filmhave a trenchin communication with the via-hole, in common. Additionally, a manufacturing method of this semiconductor device includes the processes of forming the organic filmon the substrateto be processed, forming a film having a designated pattern on the organic filmwhile exposing a part of the organic film, and removing the exposed part of the organic filmfrom the substrateto expose a foundation layer of the organic film

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Miyagi, Japan

Akitoshi Harada