Tokyo Electron Limited

Iwatani Corporation

Akitaka Shimizu

Eiichi Nishimura

Masato Kushibiki

Susumu Saito

Hiroyuki Ogawa

Asao Yamashita

Fumiko Yamashita

Koichi Nagakura

Fumihiko Higuchi

Chishio Koshimizu

Yohei Yamazawa

Tatsuo Matsudo

Manabu Iwata

Mitsuhiro Tachibana

Michiko Nakaya

Hiroki Kishi

Keiko Hada

Keiichi Shimoda

Shigeki Doba

Tsutomu Higashiura

Mitsuru Hashimoto

Akiteru Koh

Tomoya Okubo

Hajime Naito

Chie Kato

Nobuhiro Iwama

DongSheng Zhang

Norikazu Murakami

Hiromi Oka

Tsuyoshi Moriya

Daisuke Hayashi

Shinji Himori

Naoki Shindo

Kazuya Dobashi

Takayuki Fukasawa

Seishi Murakami

Hidenori Miyoshi

Genji Nakamura

Nobuhiro Takahashi

Yoshihiro Hirota

Takashi Sakuma

Masahiko Tomita

Yusuke Muraki

Kenichi Oyama

Takashi Kobayashi

Keiji Tanouchi

Takamichi Kikuchi

Kosuke Ogasawara

Takashi Sone

Hiroyuki Takahashi

Einosuke Tsuda

Takashi Enomoto

Takehiko Senoo

Masayuki Sawataishi

Yoshihiro Kato

Yu Yoshino

Shinji Irie

Kensuke Inai

Takayuki Kamaishi

Shuichiro Uda

Taiki Kato

Tetsuya Ohishi

Glenn W Gale

Kenta Yasuda

Toshihiro Aida

Daisuke Urayama

Muneyuki Imai

Takuya Abe

Takeshi Saito

Shigeo Ashigaki

Yosuke Sakao

Toshihiro Miura

Takashi Tsuruta

Shohei Yamauchi

Kensuke Kamiutanai

An etching method includes a step of preparing a substrate having a portion to be etched, a step of plasma-etching the portion to be etched of the substrate into a predetermined pattern using plasma of a processing gas containing a CF-based gas, and then a step of removing a CF-based deposit which remains as an etching residue. The step of removing the CF-based deposit includes a step of forming an oxide including an oxide of the CF-based deposit using oxygen-containing radicals, and a step of removing the generated oxide by radical processing or chemical processing using gas.

Etching method, method of removing etching residue, and storage medium

There is provided a substrate processing method which includes: treating a substrate using a fluorine-containing gas; and exposing the substrate to a moisture-containing atmosphere.

Substrate processing method, substrate processing apparatus and substrate processing system

The present disclosure appropriately shortens a processing step for processing a substrate in which a silicon layer and a silicon germanium layer are alternatively laminated. The present disclosure provides a substrate processing method of processing the substrate in which the silicon layer and the silicon germanium layer are alternatively laminated, which includes forming an oxide film by selectively modifying a surface layer of an exposed surface of the silicon germanium layer by using a processing gas including fluorine and oxygen and converted into plasma.

Substrate processing method, substrate processing apparatus, and method for producing nanowire or nanosheet transistor

An etching method includes preparing a substrate having an etching target portion formed on a silicon-containing portion, plasma-etching the etching target portion of the substrate into a predetermined pattern by plasma of a processing gas containing a CF-based gas, and removing a damage layer formed due to implantation of C and F into the silicon-containing portion exposed at a bottom of the predetermined pattern by the plasma etching. The removing of the damage layer includes forming an oxide of the damage layer by supplying oxygen-containing radicals and fluorine-containing radicals and oxidizing the damage layer with the oxygen-containing radicals while etching the damage layer with the fluorine-containing radicals, and removing the oxide by a radical treatment or a chemical treatment with a gas.

Etching method, damage layer removal method, and storage medium

A method of selectively etching a silicon nitride film includes a first step of disposing a target substrate having the silicon nitride film formed thereon in a processing space, a second step of introducing a gas containing H and F into the processing space, and a third step of selectively introducing radicals of an inert gas into the processing space.

Etching method and etching device

A substrate processing apparatus, for generating a plasma from a gas by a high frequency energy and etching a substrate in a processing chamber by radicals in the plasma, includes a high frequency power supply configured to supply the high frequency energy into the processing chamber, a gas supply source configured to introduce the gas into the processing chamber, a mounting table configured to mount the substrate thereon, and a partition plate provided in the processing chamber and configured to divide an inner space of the processing chamber into a plasma generation space and a substrate processing space and suppress passage of ions therethrough. The partition plate and a portion of an inner wall surface of the processing chamber which is positioned at least above the mounting table are covered by a dielectric material having a recombination coefficient of 0.002 or less.

Substrate processing apparatus

There is provided an etching method including: loading a substrate having a recess and an etching target portion existing on an inner surface of the recess into a processing container, the etching target portion being made of SiN or Si; preferentially modifying a surface of the etching target portion at a top portion of the recess by performing an oxygen-containing plasma process on the substrate inside the processing container; and subsequently, dry-etching the etching target portion in an isotropic manner.

Etching method and etching apparatus

In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a process space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first as supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

Substrate processing apparatus and substrate processing method

There is provided a cleaning method for removing a first deposit, formed on an upper electrode through an etching of a metal layer containing a metal, by using a plasma generated between a lower electrode of a lower structure and the upper electrode in a processing chamber of a plasma processing apparatus. The method includes a step of colliding ions with the first deposit formed on the upper electrode and a step of removing a second deposit, which is generated by said colliding and formed on the lower structure. Further, a cycle including the step of colliding and the step of removing is repeated multiple times.

Method of cleaning plasma processing apparatus

An apparatus for processing reaction products that are deposited when an etching target film contained in a target object to be processed is etched is provided with: a processing chamber; a partition plate; a plasma source; a mounting table; a first processing gas supply unit; a second processing gas supply unit. The processing chamber defines a space, and the partition plate is arranged within the processing chamber and divides the space into a plasma generating space and a substrate processing space, while suppressing permeation of ions and vacuum ultraviolet rays. The plasma source generates a plasma in the plasma forming space. The mounting table is arranged in the substrate processing space to mount the target object thereon.

In a substrate processing method for etching a silicon oxide layer formed on a surface of a substrate, a surface of the silicon oxide layer is hydrophilized. Then, the silicon oxide layer is etched by supplying a halogen-containing gas to the substrate and sublimating a reaction product generated by reaction between the halogen-containing gas and the silicon oxide layer.

Substrate processing method

In a substrate processing apparatus for processing a substrate mounted on a mounting table in a processing chamber by supplying a gas to the substrate, the apparatus includes: a partition unit provided, between a processing space where a substrate is provided and a diffusion space where a first gas is diffused, to face the mounting table; a first gas supply unit for supplying the first gas to the diffusion space; first gas injection holes, formed through the partition unit, for injecting the first gas diffused in the diffusion space into the processing space; and a second gas supply unit including second gas injection holes opened on a gas injection surface of the partition unit which faces the processing space. The second gas supply unit independently supplies a second gas to each of a plurality of regions arranged in a horizontal direction in the processing space separately from the first gas.

Growing community of inventors

Nirasaki, Japan

Akitaka Shimizu