Other

Fujitsu Corporation

Asahi Kogyosha Co., Ltd.

Akira Shibuya

Kazuo Hattori

Masashi Ozeki

Yoshifumi Nitta

A combination of a semiconductor region essentially consisting of Al.sub.x Ga.sub.1-x As (0.ltoreq.x.ltoreq.1), an insulating film formed on the surface of the semiconductor region and essentially consisting of GaAs.sub.x P.sub.y O.sub.z (w, y, z&gt;0), and a passivation film formed on the insulating film and made of an insulating material different from the insulating film. The laminated insulating film has an extremely low leakage current. An excellent MISFET can be realized by forming a gate electrode on the surface of the laminated insulating film.

GaAs MIS device

An improved dust collecting apparatus is described, in a first section of which are disposed a plurality of linear discharge electrodes and a plurality of planar dust collecting electrodes in an opposed relationship to each other within a casing that has an inlet port for introducing a dust-containing gas formed at one end and that has an outlet port for discharging a dust-free gas formed at the other end, so that the dust in the dust-containing gas may be charged and also collected in said first section. Downstream of said first section of the apparatus are aligned a plurality of rod-shaped driver electrodes spaced apart from each other along a plane transverse of a gas flow, and on the side surfaces of said driver electrodes are provided lengthwise channels having their openings directed to the outlet port side. Downstream of the gas spaces formed between adjacent ones of said driver electrodes are disposed a plurality of rod-shaped collector electrodes, and on the side surfaces of said collector electrodes are provided lengthwise channels having their openings directed to the inlet port side. A negative terminal of a D.C. power source is connected to said driver electrodes, while a positive terminal of a D.C. power source is connected to said collector electrodes, whereby the dust that has been charged in the space between said discharge electrodes and said dust collecting electrodes but has not adhered to the dust collecting electrodes and that has been respattered can be collected within the lengthwise channels of said collector electrodes.

Growing community of inventors

Narashino, Japan

Akira Shibuya