Ebara Corporation

Akira Owatari

Shingo Yasuda

Mizuki Nagai

Toshio Yokoyama

Naoki Dai

Yusuke Tamari

Kenichi Kobayashi

Mitsuru Miyazaki

Seiji Katsuoka

Yasuyuki Motoshima

Masahiko Sekimoto

Takahiro Ogawa

Teruyuki Watanabe

Akira Fukunaga

Xinming Wang

Yukio Fukunaga

Daisuke Takagi

Akihiko Tashiro

Junichiro Tsujino

Masaya Seki

Hiroyuki Kanda

Tsutomu Nakada

Mitsutoshi Yahagi

Yukiko Nishioka

Akihiro Yazawa

Naoki Shimomura

Yasuhiko Saijo

Tsuyoshi Sahoda

Provided are a plating method, an insoluble anode and a plating apparatus capable of reducing consumption of an additive in a plating solution, when plating a substrate including a via or a hole for forming a through electrode. The plating method includes the steps of preparing a substrate including a via or a hole for forming a through electrode, preparing a plating solution tank that is divided, by a diaphragm, into an anode tank in which an insoluble anode is disposed and a cathode tank in which the substrate is disposed, and electroplating the substrate with an anode current density when plating the substrate in the plating solution tank being equal to or more than 0.4 ASD and equal to or less than 1.4 ASD.

Plating method, insoluble anode for plating, and plating apparatus

A plating method capable of controlling a concentration of an additive within a proper range during plating of a substrate is disclosed. The plating method includes: disposing an anode and a substrate, having a via-hole formed in a surface thereof, so as to face each other in a plating solution containing an additive; applying a voltage between the anode and the substrate for filling the via-hole with metal; measuring the voltage applied to the substrate; calculating an amount of change in the voltage per predetermined time; and adjusting a concentration of the additive in the plating solution to keep the amount of change in the voltage within a predetermined control range.

Plating method and plating apparatus

A method of plating a substrate, such as a wafer, by applying a voltage between the substrate and an anode is disclosed. The plating method includes: preparing a substrate having a recess formed in a surface thereof, a conductive layer being formed in at least a part of the recess; placing an insoluble anode and the substrate in contact with a copper sulfate plating solution containing an additive; applying a predetermined plating voltage between the substrate and the insoluble anode by a plating power source to plate the substrate; and shutting off a reverse electric current, which flows from the insoluble anode to the substrate via the plating power source, by a diode disposed between the insoluble anode and the substrate when the predetermined plating voltage is not applied.

Plating method

An anode unit capable of forming a metal film having a uniform thickness on a substrate is disclosed. The anode unit includes an anode, a first feeding portion connected to a central portion of the anode, a second feeding portion located on a central axis of the anode and located away from the anode, and arms extending radially from the second feeding portion. The arms are connected to a periphery of the anode.

Anode unit and plating apparatus having such anode unit

An electroless plating apparatus can form a protective film on exposed surfaces of embedded interconnects stably with good selectivity for thereby protecting the interconnects. The electroless plating apparatus includes a magnetic removal portion for magnetically removing small magnetic suspended solids in an electroless plating solution which have not been removed by a filter.

Electroless plating apparatus and electroless plating method

The present invention relates to a substrate processing apparatus useful for plating a substrate or processing a substrate by dipping a substrate in a processing liquid. A substrate processing apparatus of the present invention includes: a loading/unloading area for carrying in and out a substrate; a cleaning area for cleaning the substrate; and a plating area for plating the substrate. The loading/unloading area is provided with a substrate transfer robot having a plurality of hands of dry-use design, a loading port mounted with a cassette for housing substrates, and a reversing machine of dry-use design for reversing the substrate from face up to face down.

Substrate processing apparatus and substrate processing method

A metal film-forming method of the present invention can form a metal film having different film qualities in the thickness direction, in a continuous manner using a single processing solution. The metal film-forming method including: providing a substrate having embedded interconnects formed in interconnect recesses provided in a surface of the substrate; and forming a metal film, having different film qualities in the thickness direction, on surfaces of the interconnects in a continuous manner by changing the flow state of a processing solution relative to the surface of the substrate while keeping the surface of the substrate in contact with the processing solution.

Method and apparatus for forming metal film

A substrate processing method can securely form a metal film by electroless plating on an exposed surface of a base metal, such as interconnects, with increased throughput and without the formation of voids in the base metal. The substrate processing method includes: cleaning a surface of a substrate having a base metal formed in the surface with a cleaning solution comprising an aqueous solution of a carboxyl group-containing organic acid or its salt and a surfactant as an additive; bringing the surface of the substrate after the cleaning into contact with a processing solution comprising a mixture of the cleaning solution and a solution containing a catalyst metal ion, thereby applying the catalyst to the surface of the substrate; and forming a metal film by electroless plating on the catalyst-applied surface of the substrate.

Method for processing substrate

A substrate processing apparatus can efficiently form, e.g. by electroless plating, an interconnects-protective layer on the surface of a substrate at a low initial cost for the apparatus and a low running cost without the need for a wide installation space. The substrate processing apparatus includes a loading/unloading and cleaning area accommodating a first transfer robot which has a hand adapted for handling a dry substrate and a hand adapted for handling a wet substrate, a loading port which loads a substrate cassette that houses a substrate, and a cleaning unit for cleaning a substrate. A plating treatment area accommodates a second transfer robot which has a back surface-attracting type of hand provided with a reversing mechanism, a pretreatment unit for carrying out pretreatment of a substrate before plating, and a plating treatment unit for carrying out plating treatment of the substrate.

Substrate processing apparatus

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Tokyo, Japan

Akira Owatari