Fujitsu Corporation

Nippon Zeon Company, Ltd.

Akira Oikawa

Hiroyuki Tanaka

Keiji Watanabe

Hideyuki Tanaka

Takahisa Namiki

Shun-ichi Fukuyama

Hideyuki Matsuda

Masayuki Oie

Nobunori Abe

Masaaki Yamagami

Ei Yano

Satoshi Takechi

Kenji Nakagawa

Hiroshi Kudo

Yuko Kaimoto

Masao Kanazawa

Shuichi Miyata

A method of forming a resist pattern including the steps of: forming a resist film by coating resist on the surface of a member to be processed, the resist containing a composition A capable of increasing the volume by chemical reaction; exposing and developing the coated resist film to form a pattern having an opening; and chemically reacting fluid containing a composition B with the composition A by contacting the fluid with the composition A to change the size of the opening of the resist film, the composition B being capable of increasing the volume of the composition A by chemical reaction with the composition A. It is possible to form a fine resist pattern by a simple method.

Method of making resist patterns

An exposure technique which accomplishes high transparency and the prevention of influence of reflected light in the ultraviolet region of KrF excimer laser light, the technique being capable of decreasing reflected light by employing a base polymer having high transparency in the ultraviolet region and by employing a bleaching agent in combination with a photo acid generator, the bleaching agent being capable of preventing the formation of eaves in an upper portion of a resist pattern.

Photoresist with bleaching effect

A composition for negative type chemically amplified resist including, as main components, a random copolymer of vinyl phenol and vinyl cyclohexanol, a melamine resin having an enhanced hexamethoxymethylmelamine content, an acid generator for generating an acid upon irradiation by ionizing radiation, and a solvent. The resist pattern formation process and apparatus are also disclosed.

Negative type composition for chemically amplified resist and process

A chemically amplified resist pattern is formed by applying chemically amplified resist, forming thereafter a layer of an amorphous polyolefines substance thereon, then exposing the chemically amplified resist, and furthermore, developing the chemically amplified resist after removing the amorphous polyolefines substance.

Method of forming chemically amplified resist pattern and manufacturing

Apparatus of formation of chemically amplified resist pattern

A resist composition comprising in admixture (A) a compound which forms an acid upon exposure to active rays, (B) a polymer which has at least one structural unit with a group unstable to an acid and cleaves at this group in the presence of the acid derived from the compound (A) to turn alkali-soluble, and (C) a phenolic compound, and a process for forming a resist pattern using this resist composition are provided.

Resist composition

Novel polysilphenylenesiloxanes having a three-dimensional mesh structure of silphenylenesiloxane core surrounded by triorganosilyl groups, which have a good sensitivity to ionizing radiations such as deep ultraviolet rays, electron beams and X-rays, a high softening point of 400.degree. C. or more, and a good resistance to O.sub.2 -plasma etching, and exhibit a high contrast and low swelling. These polysiphenylenesiloxanes are useful as a resist material, especially a top layer resist of the bi-level resist system and an interlevel dielectric or heat-resisting protective layer. The resist material has a high resolution because of a high contrast, low swelling and high thermal resistance thereof.

Polysilphenylenesiloxane, production process thereof, and resist

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Kawasaki, Japan

Akira Oikawa