Alps Electric Co., Ltd.

Other

Frontec Incorporated

Seiko Epson Corporation

Akira Nakano

Tadahiro Ohmi

Yasuhiko Kasama

Koichi Fukuda

Hiroyuki Hebiguchi

Hirofumi Fukui

Chisato Iwasaki

Ken Kawahata

Shoichi Ono

Sung Chul Kim

Kenji Yamamoto

Kenichi Mitsumori

Akira Abe

Tomofumi Oba

Tadashi Kumagai

Tadashi Shibata

Yukimitsu Yamada

Osamu Yoshida

Takeshi Miyashita

Hitoshi Kitagawa

Shintaro Asuke

Satoshi Miyazawa

Masanori Miyazaki

Yoshiomi Tsuji

Tsuyoshi Hayama

Hideyuki Takahashi

Ryosuke Uchida

Yoshinari Higa

Yasuhiro Takeda

Masaru Kubota

The illuminating device includes a lens formed of a resin mold and having a portion for receiving an LED which is formed on one surface thereof, the LED received in the receiving portion, and a wiring member deposited on the receiving-portion-forming surface of the lens, and light irradiated from the LED is incident to the lens. In the method of fabricating the illuminating device, a transfer film having a conductive portion is set in a lens molding cavity and a wiring member including a conductive portion is deposited on one surface of the lens while the lens is injected and molded.

Illuminating device and method of fabricating the same

In a liquid-crystal display apparatus, each color pixel has three dots enclosed by adjacent signal lines and adjacent scanning lines. Each dot is provided with a switching device and a dot electrode. Each color pixel is provided with three display electrodes electrically connected to three dot electrodes through contact holes passing through an insulation layer. The display electrodes are disposed so as to overlap with the three dot electrodes. Each of the display electrodes is electrically connected to only one of the three dot electrodes. Each of the dot electrodes is electrically connected to only one of the display electrodes.

Liquid-crystal display apparatus capable of reducing line crawling

A flexible printed circuit board includes a substrate layer composed of insulating material, a protection circuit of a thin-film capacitor element, the protection circuit including a first wiring layer on the substrate layer, a dielectric layer, and a counter electrode layer. At least a portion of each of the first wiring layer and the counter electrode layer serves as a terminal. The front surface of each of the first wiring layer and the counter electrode layer, except the terminal portion, is covered with an insulating coating.

Flexible printed circuit board

A plasma processing apparatus comprising a plurality of plasma processing units is provided. Each of the plasma processing units has a matching circuit connected between a radiofrequency generator and a plasma excitation electrode. Among these plasma processing units, a variation &#x3c;RA&#x3e; between the maximum and minimum values of input-terminal-side AC resistances RA of the matching circuits defined by &#x3c;RA&#x3e;=(RA&#x2212;RA)/(RA+RA) is adjusted to be less than 0.5. A variation between the maximum and minimum values of output-terminal-side AC resistances RB of the matching circuits defined by &#x3c;RB&#x3e;=(RB&#x2212;RB)/(RB+RB) is also adjusted to be less than 0.5. The plasma processing units can be adjusted to achieve substantially uniform plasma results in a shorter period of time.

Plasma processing apparatus including a plurality of plasma processing units having reduced variation

The performance of a plasma processing apparatus which is disassembled, transferred, and reassembled is evaluated. The plasma processing apparatus has a plasma processing chamber having an electrode for exciting a plasma, a radiofrequency generator connected to the electrode, and an impedance matching circuit for performing the impedance matching between the plasma processing chamber and the radiofrequency generator. The performance of the apparatus is evaluated whether or not three times the first series resonant frequency of the plasma processing chamber is larger than the power frequency supplied to the plasma processing chamber.

Performance evaluation method for plasma processing apparatus for continuously maintaining a desired performance level

A plasma processing apparatus includes a radio frequency generator, a plasma processing chamber, a matching circuit for impedance matching between the radio frequency generator and the plasma processing chamber, and matching circuit adjusting means for matching the output impedance of the matching circuit to the impedance of the plasma processing chamber in a nondischarge state. The matching circuit is a product matching circuit that is produced based on a circuit constant of an adjusting matching circuit. The adjusting matching circuit is disposed between the radio frequency generator and the plasma processing chamber for a required plasma treatment and the circuit constant is determined by impedance matching between the radio frequency generator and the plasma processing chamber so that the adjusting matching circuit matches the load impedance of the plasma processing chamber.

Plasma processing apparatus, method for operating the same, designing system of matching circuit, and plasma processing method

A plasma processing apparatus of the present invention includes a matching circuit for impedance matching between a radio-frequency generator and a plasma processing chamber, and one or a plurality of impedance converting circuits provided between the matching circuit and the radio-frequency generator. The impedance converting circuit converts an impedance to decrease a difference in impedance to be matched by the matching circuit, thereby decreasing a change in the output impedance with a moving amount of a capacitance control of one of variable passive elements of the matching circuit, such as a load capacitor and a tuning capacitor. Therefore, a change in the impedance of the plasma processing chamber can be finely controlled.

Plasma processing apparatus

A plasma processing unit has two electrodes for exciting a plasma, a plasma processing chamber, an RF generator, a matching circuit for performing impedance matching between the plasma processing chamber and the RF generator, a feeder that connects an output terminal of the matching circuit to one of the electrode, and a supplier that connects the RF generator to an input terminal of the matching circuit. The feeder is arranged to decrease the average density per unit volume of the RF power supplied from the RF generator as the RF power flows from the output terminal of the matching circuit to the electrode. The section of the plasma processing unit that is DC-grounded has a surface provided with a low-resistance portion. The supplier or the feeder is fixed on a floor using RF impedance adjustors so as to prevent the RF impedance therein from changing.

Plasma processing apparatus and plasma processing system with reduced feeding loss, and method for stabilizing the apparatus and system

A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance Cat a later time tafter delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance Cis less than 26 times the plasma electrode capacitance Cat the later time tbetween the plasma excitation electrode and a counter electrode which cooperate with each other.

Performance evaluation method for plasma processing apparatus

A plasma processing apparatus includes a chassis accommodating an impedance matching circuit. The impedance matching circuit is placed between an RF generator and a plasma excitation electrode. Magnetic probes for detecting a magnetic field generated at a slit in a sidewall of the chassis are placed axisymmetrically. The plasma processing apparatus also includes a feedback circuit for feeding back to an RF generator or a matching circuit so that a current detected by a current-detecting unit maintains a predetermined value.

Plasma processing apparatus and method capable of performing uniform plasma treatment by control of excitation power

A plasma processing apparatus has a plasma processing chamber that accommodates an electrode pair of a plasma excitation electrode for exciting plasma and a susceptor electrode facing the plasma excitation electrode, a workpiece to be treated being placed therebetween. The apparatus also has a chassis that accommodates an impedance matching circuit, provided in the middle of a supply path for feeding RF power from an RF generator to the plasma excitation electrode, for matching the impedance between the RF generator and the plasma processing chamber. In the chassis, impedances are axisymmetrically equal at a predetermined frequency with respect to the direction of a high-frequency current returning to the RF generator. The matching circuit has at least two inductance coils connected in parallel.

Plasma processing apparatus capable of performing uniform plasma treatment by preventing drift in plasma discharge current

A plasma processing apparatus includes a plurality of plasma processing units. Each of the plasma processing units has a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit which matches the impedance between the radiofrequency generator and the plasma processing unit. The absolute value &verbar;&Dgr;RA&verbar; of the difference &Dgr;RA between the AC resistance RA at a time t and the AC resistance RA at a later time t and the absolute value &verbar;&Dgr;RB&verbar; of the difference &Dgr;RB between the AC resistance RB at the time t and the AC resistance RB at the later time t are maintained at a value less than an upper limit. Based on these values, whether or not the plasma processing apparatus which is reassembled or used at a user site maintains a required level of performance is evaluated.

A plasma processing apparatus has a plasma processing chamber having a plasma excitation electrode, a radiofrequency generator connected to the plasma excitation electrode, and a matching circuit for matching the impedance between the plasma processing chamber and the radiofrequency generator. The loss capacitance C at a later time t1 after delivery is measured between the plasma excitation electrode and ground potential positions which are grounded. The performance is evaluated by whether or not the loss capacitance C is less than 26 times the plasma electrode capacitance C at the later time t1 between the plasma excitation electrode and a counter electrode which cooperate with each other.

An active matrix type liquid display includes a main display and a sub-display having pixel areas. The pixel areas in the sub-display are different in size from the pixel areas in the main display. The active matrix type liquid display is configured so that the ratio of minimum space to maximum space is equal to or greater than one. The minimum space is the distance that separates the nearest ends of one pixel electrode and one gate electrode. The maximum space is the distance between opposite surfaces of paired electrodes.

Growing community of inventors

Miyagi-ken, Japan

Akira Nakano