Japan Synthetic Rubber Co., Ltd.

Other

Jsr Corporation

Nitto Electric Industrial Co., Ltd.

Akira Iio

Masayuki Hattori

Katsuya Okumura

Hiroyuki Yano

Masayuki Motonari

Gaku Minamihaba

Yukiteru Matsui

Naoki Andoh

Nobuo Hayasaka

Hiroshi Oka

Noboru Yamahara

Kohei Goto

Masato Kawakami

Zen Komiya

Noboru Oshima

Takayuki Yamamoto

Toshinori Sakagami

Yoshihiro Minamizaki

Masatoshi Arakawa

Kiyonobu Kubota

Yoshio Miki

Ituo Nishiwaki

Yosihiro Ohira

Haruo Yamanouchi

Masao Hisatomi

Masao Sakamoto

Hiroyuki Kabushiki Kaisha Toshiba Yano

Gaku c/o Intellectual Property Division Minamihaba

Katsuya c/o Octec Inc Okumura

Yukiteru Kabushiki Kaisha Toshiba Matsui

The object of the present invention is to provide an aqueous dispersion that can give the required properties for a wide range of uses including electronic materials, magnetic materials, optical materials and polishing materials, and to provide an aqueous dispersion for chemical mechanical polishing (CMP slurry) that gives an adequate polishing rate without creating scratches in polishing surfaces. Another object of the present invention is, to provide a method for manufacture of semiconductor devices using a CMP slurry that can control progressive erosion due to scratches and the like during polishing and that can achieve efficient flattening of working films, and to provide a method for formation of embedded wiring. The aqueous dispersion or CMP slurry of the present invention contains polymer particles made of thermoplastic resins or the like, and inorganic particles made of alumina, silica or the like, wherein the zeta potentials of the polymer particles and inorganic particles are of opposite signs, and they are bonded by electrostatic force to form aggregates as composite particles. The aggregates are subjected to ultrasonic wave irradiation or shear stress with a homogenizer to give more uniformly dispersed composite particles.

AQUEOUS DISPERSION, AQUEOUS DISPERSION FOR CHEMICAL MECHANICAL POLISHING USED FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, METHOD FOR MANUFACTURE OF SEMICONDUCTOR DEVICES, AND METHOD FOR FORMATION OF EMBEDDED WRITING

Polymer particles and polishing material containing them

A process for chemical mechanical polishing of a working film on a wafer, which entails conducting the chemical mechanical polishing with an aqueous dispersion containing water and composite particles, the composite particles containing polymer particles having at least one of a silicon compound portion or section and a metal compound portion or section formed directly or indirectly on the polymer particles.

Composite particles and production process thereof, aqueous dispersion, aqueous dispersion composition for chemical mechanical polishing, and process for manufacture of semiconductor device

Water-laden solid matter is provided which is obtained by adding 40 to 300 weight parts of water to 100 weight parts of inorganic oxide particles synthesized by fumed process or metal evaporation oxidation process, slurry for polishing is provided which is manufactured by using the water-laden solid matter, and a method for manufacturing a semiconductor device using the above slurry. Said water-laden solid matter is within a range of 0.3 to 3 g/cm in bulk density and within a range of 0.5 to 100 mm&phgr; in average particle size when manufactured granular. Said slurry for polishing is manufactured from the water-laden solid matter, and the average particle size thereof after being dispersed in water is within a range of 0.05 to 1.0 &mgr;m.

Water-laden solid matter of vapor-phase processed inorganic oxide particles and slurry for polishing and manufacturing method of semiconductor devices

It is an object of the present invention to provide an aqueous dispersion and CMP slurry that can achieve polishing at an adequate rate without producing scratches in the polishing surfaces of wafer working films, and a polishing process for wafer surfaces and a process for manufacture of a semiconductor device using them. A CMP slurry and the like of the present invention contains polymer particles with a crosslinked structure and a mean particle size of 0.13-0.8 &mgr;m. The CMP slurry may contain no surfactant, and may contain the surfactant of not greater than 0.15 wt %. A CMP slurry and the like of another present invention contains polymer particles and inorganic particles of silica, aluminum and the like. A mean particle size of the polymer particles may be not greater than a mean particle size of the inorganic particles. And the mean particle size of the inorganic coagulated particles may be 0.1-1.0 &mgr;m, and may be smaller than the mean particle size of the polymer particles. The CMP slurry is used as a polishing agent and a working film of a silicon oxide film, an aluminum film, a tungsten film or a copper film formed on a wafer is polished. And a semiconductor device is manufactured by using the CMP slurry.

Chemical mechanical method of polishing wafer surfaces

The present invention provides aqueous dispersion slurry of inorganic particles which is so stable as not to increase in viscosity, gel or sediment even if stored for a long time and therefore can be used as raw materials for, for example, cosmetics, paint, coating materials and lapping slurry for semiconductor wafers, and production method of such aqueous dispersion slurry. The aqueous dispersion slurry according to the present invention has the number of particles whose a particle diameter of 1.3 .mu.m or more is 180,000 or less per mL in terms of 30 wt % in concentration, and the average particle diameter thereof is in a range of 0.05-0.9 .mu.m. The number of particles having aparticle diameter of 1.3 .mu.m or more is counted by using Particle Sensor KS-60, which is a light extinction type sensor for detecting particles, and Particle Counter KL-11, which is a particle counter, both of which made by the same manufacturer, Rion Electro Corp. The average particle diameter is measured by using Laser Particle Analyzer System Par-III made by Otsuka Denshi Co., Ltd.

Aqueous dispersion slurry of inorganic particles and production methods

A process for producing a hydrogenation product of ring-opening polymer by hydrogenating, in the presence of a hydrogenation catalyst, the non-aromatic carbon-to-carbon double bond present in a ring-opening polymer obtained by subjecting to ring-opening polymerization at least one norbornene derivative represented by general formula (I): ##STR1## wherein A and B independently represent hydrogen atoms or hydrocarbon groups having 1-10 carbon atoms, X and Y independently represent hydrogen atoms, halogen atoms or monovalent organic groups, and m is 0 or 1, alone or in combination with a monomer copolymerizable with said norbronene derivative, characterized by using, as the hydrogenation catalyst, a ruthenium compound represented by general formula (II):

Process for producing hydrogenation product of ring-opening polymer

A transparent resin material consisting of a hydrogenation product of a (co)polymer obtained by subjecting at least one compound represented by general formula (I) or a combination of at least 5% by weight of said compound and 95% by weight or less of other copolymerizable cyclic olefin monomer to metathesis polymerization: ##STR1## wherein A and B are independently hydrogen atoms or C.sub.1-10 hydrocarbon groups; and X and Y are independently hydrogen atoms, C.sub.1-10 hydrocarbon groups, --C(CH.sub.2).sub.n COOR.sup.1 groups or --(CH.sub.2).sub.n OCOR.sup.1 groups [R.sup.1 is a C.sub.1-20 hydrocarbon group and n is 0 or an integer of 1-10] with the proviso that at least one of X and Y is selected from the above --(CH.sub.2).sub.n COOR.sup.1 and --(CH.sub.2).sub.n OCOR.sup.1 groups. Said transparent resin material is moldable and has sufficient optical properties, low hygroscopicity, good heat resistance and excellent adhesion to recording layer.

Transparent resin material

A transparent resin material consisting of a (co)polymer obtained by subjecting at least one compound represented by the general formula (I) or a combination of said compound and other copolymerizable monomer to metathesis polymerization, or a hydrogenation product of the (co)polymer: ##STR1## wherein A and B are independently hydrogen atoms or C.sub.1-10 hydrocarbon groups; X and Y are independently hydrogen atoms, C.sub.1-10 hydrocarbon groups, halogen atoms, halogen-substituted C.sub.1-10 hydrocarbon groups, --(CH.sub.2).sub.n COOR.sup.1, --(CH.sub.2).sub.n OCOR.sup.1, --(CH.sub.2).sub.n OR.sup.1, --(CH.sub.2).sub.n CN, --(CH.sub.2).sub.n CONR.sup.2 R.sup.3, --(CH.sub.2).sub.n COOZ, --(CH.sub.2).sub.n OCOZ, --(CH.sub.2).sub.n OZ or --(CH.sub.2).sub.n W [R.sup.1, R.sup.2, R.sup.3 and R.sup.4 are independently C.sub.1-20 hydrocarbon groups, Z is a halogen-substituted hydrocarbon group, W is SiR.sub.p.sup.5 D.sub.3-p (R.sup.5 is a C.sub.1-10 hydrocarbon group, D is a halogen atom, --OCOR.sup.5 or --OR.sup.5, p is 0 or an integer of 1-3), n is 0 or an integer of 1-10] with the proviso that at least one of X and Y is selected from the above groups other than the hydrogen atom and the hydrocarbon groups, or X and Y may form together ##STR2## and m is 0 or 1. Said transparent resin material is moldable and has sufficient optical properties, low hygroscopicity, good heat resistance and excellent adhesion to recording layer.

A pressure-sensitive adhesive composition comprising as a base polymer a mixed block copolymer comprising a polymer block of a monovinyl-substituted aromatic compound and a polymer block of a conjugated diene compound. The pressure-sensitive adhesive composition is useful to seal, for example, corrugated board or carton.

Pressure-sensitive adhesive composition

Methacrylic acid is produced from methacrolein by gaseous phase oxidation in a very high selectivity, when methacrolein, molecular oxygen-containing gas and steam in a molar ratio of methacrolein:molecular oxygen:steam of 1:1-3:0-50 are subjected to reaction at a temperature in the range of 250.degree. to 400.degree. C., at a space velocity of 250 to 3,000 hr.sup.-1 (at 0.degree. C. and 1 atm.) with a novel catalyst having the following composition formula in atomic ratio:

Process for producing methacrylic acid

In a process for producing methacrolein by the gas phase catalytic reaction of isobutene with molecular oxygen in the presence of a catalyst consisting of Mo, Bi, Fe, Co, Sb and O, the catalyst is prepared by using as the Sb component, a mixture of a trivalent Sb compound and a pentavalent Sb compound. When said catalyst is used, the reaction can be continued over a long period of time without formation of complete oxidation products, i.e. CO and CO.sub.2, and, even when the starting isobutene contains n-butene, the reaction proceeds smoothly to make it possible to produce methacrolein and 1,3-butadiene simultaneously.

Process for producing methacrolein

A process for producing styrene which comprises subjecting 4-vinylcyclohexene to gas phase catalytic oxidation with a molecular oxygen-containing gas, for example, air, characterized in that the oxidation is carried out by use of a catalyst composition represented by the general formula,

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Tokyo, Japan

Akira Iio