Panasonic Intellectual Property Management Co., Ltd.

Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Panasonic Holdings Corporation

Akio Furusawa

Kiyohiro Hine

Hidetoshi Kitaura

Taichi Nakamura

Shigeaki Sakatani

Kenichiro Suetsugu

Takahiro Matsuo

Masato Mori

Atsushi Yamaguchi

Tetsuo Fukushima

Kazuki Sakai

Shinji Ishitani

Tomohiro Okumura

Yoshihiro Tomita

Mitsuo Saitoh

Yukihiro Ishimaru

Kimiaki Nakaya

Hiroshi Kawazoe

Shinnosuke Akiyama

Seiji Fujiwara

Shigeki Sakaguchi

Kenichirou Suetugu

Misato Takahashi

There is provided a bonding material which forms a bonding portion between two objects, which material contains (1) first metal particles comprising a first metal and having a median particle diameter in the range of 20 nm to 1 &#x3bc;m, and (2) second metal particles comprising, as a second metal, at least one alloy of Sn and at least one selected from Bi, In and Zn and having a melting point of not higher than 200&#xb0; C.

Bonded structure and bonding material

A mounting structure is used, which includes: a semiconductor element including an element electrode; a metal member; and a sintered body configured to bond the semiconductor element and the metal member is used, in which the sintered body contains a first metal and a second metal solid-dissolved in the first metal, the second metal is a metal having a diffusion coefficient in the first metal larger than a self-diffusion coefficient of the first metal, and a content ratio of the second metal relative to a total mass of the first metal and the second metal in the sintered body is equal to or lower than a solid solution limit of the second metal to the first metal.

Mounting structure and nanoparticle mounting material

A jointing material includes: at least one type of element at 0.1 wt % to 30 wt %, the element being capable of forming a compound with each of tin and carbon; and tin at 70 wt % to 99.9 wt % as a main component.

Jointing material, fabrication method for semiconductor device using the jointing material, and semiconductor device

To provide a method for efficiently producing metal microparticles having a particle diameter of 1 &#x3bc;m to 10 &#x3bc;m, and a device for producing the same. A metal microparticle production method is used, which includes a particle generating step of generating primary particles by irradiating a metal lump in a solvent in a first tank with an ultrasonic wave, and a particle splitting step of irradiating the primary particles with an ultrasonic wave in a solvent in a second tank and splitting the primary particles to produce secondary particles. Further, a metal microparticle production device is used, which includes: a first tank that has a solvent and a metal lump; a first heating unit that heats the solvent in the first tank; a first ultrasonic vibrator that is disposed in the first tank and irradiates the metal lump with an ultrasonic wave to generate primary particles; a second tank that has the solvent and the primary particles; and a second ultrasonic vibrator that irradiates the primary particles with an ultrasonic wave to split the primary particles.

Metal microparticle production method and metal microparticle production device

A solder alloy, includes: about 3 wt % to about 15 wt % of Sb; about 0.01 wt % to about 1.5 wt % of Te; and about 0.005 wt % to about 1 wt % of at least one element selected from the group consisting of Zn, Co, and Cr; and a balance of Sn.

Solder alloy and junction structure using same

There is provided a solder alloy in which 0.5 mass % or more and 1.25 mass % or less of Sb, In satisfying the following formula (I) or (II) when [Sb] is set as a Sb content percentage (mass %) and [In] is set as an In content percentage (mass %): in a case of 0.5&#x2264;[Sb]&#x2264;1.0, 5.5&#x2264;[In]&#x2264;5.50+1.06[Sb] . . . (I), in a case of 1.0&#x3c;[Sb]&#x2264;1.25, 5.5&#x2264;[In]&#x2264;6.35+0.212[Sb] . . . (II) (in the formula, [Sb] indicates a Sb content percentage (mass %) and [In] indicates an In content percentage (mass %)), 0.5 mass % or more and 1.2 mass % or less of Cu, 0.1 mass % or more and 3.0 mass % or less of Bi, 1.0 mass % or more and 4.0 mass % or less of Ag, and 0 mass % or more and 0.025 mass % or less of Co are contained, and has the remainder consisting essentially of Sn.

Solder alloy and package structure using same

A mount structure having a joining capable of withstanding development of cracks generated by thermal stress due to repeated temperature changes in a mount structure having the joining of a large area is formed by joining a ceramic substrate electrode of a ceramic substrate and a metal substrate electrode of a metal substrate by a laminate, in which the laminate is formed by stacking a first interface layer, a first solder joining portion, a second interface layer, a first buffer material electrode, a buffer material, a second buffer material electrode, a third interface layer, a second solder joining portion and a fourth interface layer in this order from the ceramic substrate electrode toward the metal substrate electrode, a thickness of the laminate is 30 &#x3bc;m or more and 100 &#x3bc;m or less, a difference between a thickness of the first solder joining portion and a thickness of the second solder joining portion is within 25%, and differences in elastic moduli and in linear expansion coefficients between the first solder joining portion and the buffer material are respectively within 62%.

Mount structure

A solder alloy of the disclosure includes Sb of which a content is in a range of 3 wt % to 30 wt %, Te of which a content is in a range of 0.01 wt % to 1.5 wt %, Au of which a content is in a range of 0.005 wt % to 1 wt %, at least one of Ag and Cu, wherein a content rate of at least one of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a content rate of a sum of Ag and Cu in the solder alloy is in a range of 0.1 wt % to 20 wt %; and a balance of Sn.

Solder alloy and bonded structure using the same

A mount structure includes two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer at the interfaces with the two members. The bonding material layer contains a first intermetallic compound and a stress relaxation material. The first intermetallic compound has a spherical, a columnar, or an oval spherical shape, and the same crystalline structure as the first interface layer and the second interface layer, and partly closes the space between the first interface layer and the second interface layer. The stress relaxation material contains tin as a main component, and fills around the first intermetallic compound.

Mount structure including two members that are bonded to each other with a bonding material layer having a first interface layer and a second interface layer

A mounting structure includes a BGA including a BGA electrode, a circuit board including a circuit board electrode, and a solder joining portion which is arranged on the circuit board electrode and is connected to the BGA electrode. The solder joining portion is formed of Cu having a content ratio in a range from 0.6 mass % to 1.2 mass %, inclusive, Ag having a content ratio in a range from 3.0 mass % to 4.0 mass %, inclusive, Bi having a content ratio in a range from 0 mass % to 1.0 mass %, inclusive, In, and Sn. A range of the content ratio of In is different according to the content ratio of Cu.

Mounting structure and BGA ball

A solder alloy is substantially Ag-free and has desirable neat-resistance fatigue characteristics in a high-temperature environment as high as 150&#xb0; C., even when used for soldering of electronic components having no leads. The solder alloy contains Sb, In, Cu, and Bi, and Sn accounting for the remainder, and satisfies the following formulae:0.5&#x2264;[Sb]&#x2264;1.250.66[Sb]+4.16&#x2264;[In]&#x2264;6.00.5&#x2264;[Cu]&#x2264;1.20.1&#x2264;[Bi]&#x2264;0.5,wherein [Sb], [In], [Cu], and [Bi] represent the contents of Sb, In, Cu, and Bi, respectively, in mass %.

Solder alloy and mounted structure using same

Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3&#x2266;[Ag]&#x2266;4.0, Bi satisfying 0&#x2266;[Bi]&#x2266;1.0, and Cu satisfying 0&#x3c;[Cu]&#x2266;1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 0&#x3c;[Cu]&#x3c;0.5, In in a range of 5.2+(6&#x2212;(1.55&#xd7;[Cu]+4.428))&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 0.5&#x2266;[Cu]&#x2266;1.0, In in a range of 5.2&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 1.0&#x3c;[Cu]&#x2266;1.2. A balance includes only not less than 87 mass % of Sn.

Solder material and bonded structure

The present invention has an aspect to provide a mounted structure of which heat-resistant fatigue characteristic is improved. A mounted structure is provided with a substrate having a substrate electrode, an electronic component having a component electrode, and a bonding part bonding the substrate electrode and the component electrode, wherein the bonding part is constituted by a solder reinforcing part and a solder bonding part, the solder reinforcing part is a side vicinity part of the bonding part, and is constituted by In of 3 wt % or more and 8 wt % or less and Sn of 88 wt % or more, and the solder bonding part is constituted by a Sn&#x2014;Bi system solder material and In of 0 wt % or more and less than 3 wt %.

Mounted structure and manufacturing method of mounted structure

Solder material used in soldering of an Au electrode including Ni plating containing P includes Ag satisfying 0.3&#x2266;[Ag]&#x2266;4.0, Bi satisfying 0&#x2266;[Bi]&#x2266;1.0, and Cu satisfying 0&#x2266;[Cu]&#x2266;1.2, where contents (mass %) of Ag, Bi, Cu and In in the solder material are denoted by [Ag], [Bi], [Cu], and [In], respectively. The solder material includes In in a range of 6.0&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 0&#x3c;[Cu]&#x3c;0.5, In in a range of 5.2+(6&#x2212;(1.55&#xd7;[Cu]+4.428))&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 0.5&#x2266;[Cu]&#x2266;1.0, In in a range of 5.2&#x2266;[In]&#x2266;6.8 when [Cu] falls within a range of 1.0&#x3c;[Cu]&#x2266;1.2. A balance includes only not less than 87 mass % of Sn.

A bonding structure body in which a semiconductor element and an electrode are bonded via a solder material, wherein a part that allows bonding has a first intermetallic compound layer that has been formed on the electrode side, a second intermetallic compound layer that has been formed on the semiconductor element side, and a third layer that is constituted by a phase containing Sn and a sticks-like intermetallic compound part, which is sandwiched between the two layers of the first intermetallic compound layer and the second intermetallic compound layer, and the sticks-like intermetallic compound part is interlayer-bonded to both of the first intermetallic compound layer and the second intermetallic compound layer.

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Osaka, Japan

Akio Furusawa