Samsung Electronics Co., Ltd.

Akinori Okubo

Sangwoo Bae

Jungchul Lee

Minhwan Seo

Jae-Hong Kim

Tae Hyun Kim

Sang-Min Lee

Seungwoo Lee

Sungho Jang

Ingi Kim

Jaehwang Jung

Seongkeun Cho

Eunhee Jeang

Anton Sergeevich Medvedev

Won-Don Joo

Maksim Vladimirovich Riabko

Sang-Woo Bae

Aleksandr Shorokhov

Janghwi Lee

Yoshihiko Hayashi

Sangjoon Hong

Jangwoon Sung

Seong-Keun Cho

Eun-Hee Jeang

Provided are a level sensor configured to detect a height level of a substrate, and a substrate processing apparatus including the level sensor. The level sensor includes a measurement light source configured to radiate measurement light toward the substrate, a prism configured to split reflected light of the measurement light into first polarized light and second polarized light and generate a first optical path length difference between the first polarized light and the second polarized light, an optical path length modulator configured to keep constant an optical path length of the first polarized light and periodically change an optical path length of the second polarized light, and a detector configured to detect the first optical path length difference based on an interference signal between the first polarized light and the second polarized light.

Level sensor and substrate processing apparatus including the same

Provided is a polarization measuring device including a stage on which a measurement target is provided, a light source assembly configured to emit incident light, a first polarimeter configured to polarize the incident light, a second polarimeter configured to polarize reflected light reflected from the measurement target that is irradiated by the incident light, a filter assembly configured to remove noise from the reflected light, and a detector configured to receive the reflected light and measure an intensity of the reflected light and a phase of the reflected light.

Polarization measuring device and method of fabricating semiconductor device using the same

In a method of detecting a defect on a substrate, an incident beam may be radiated to a surface of the substrate to generate reflected light beams. A second harmonic generation (SHG) beam among the reflected light beams may be detected. The SHG beam may be generated by a defect on the substrate. A nano size defect may be detected by examining the SHG beam.

Method of detecting a defect on a substrate, apparatus for performing the same and method of manufacturing semiconductor device using the same

An optical test system includes a stage region to accommodate an object to be tested, a first incident optical system which changes a first polarization state of a first light beam to a second polarization state and provide the first light beam in the second polarization state to the stage region in a first direction at a first incident angle which is not a right angle, a second incident optical system which changes a third polarization state of a second light beam to a fourth polarization state and inputs the second light beam in the fourth polarization state to the stage region in a second direction at a second incident angle which is not a right angle, and a main optical system to detect a first reflected light beam reflected from the stage region at a first reflection angle different from the first and second incident.

Optical test system and method, and method of manufacturing semiconductor device by using the optical test system and method

A test device includes a plurality of transceivers that respectively transmit a wave to a test target point of a test object, respectively receive a wave reflected, scattered, or refracted from the test object, and respectively output a signal generated in response to the received wave; a combiner that combines the plurality of received signals generated by the plurality of transceivers; and a plurality of switches that are opened or closed to transfer the plurality of received signals to the combiner or block the plurality of received signals from being transferred to the combiner.

Test device and imaging device including the same

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Hwaseong-si, South Korea

Akinori Okubo