Tokyo Electron Limited

Tokyo Electron Yamanashi Limited

Akihito Toda

Eiichi Nishimura

Kazuhiko Sugiyama

Hiroshi Nagahata

Kazuto Ogawa

Hiroki Amemiya

Yutaka Amemiya

Yukio Naitou

A plasma processing method includes the steps of: loading a substrate on a lower electrode, the substrate having a resist mask formed on a transcription film; supplying a processing gas into a processing chamber; forming a magnetic field, which is oriented toward one direction and perpendicular to a line connecting an upper and the lower electrode; supplying a high frequency power to the lower electrode in the processing chamber to thereby form an electric field; converting the processing gas into a plasma by a magnetron discharge caused by a presence of an orthogonal electromagnetic field; and forming lenses on the transcription film by using the plasma. The high frequency power is supplied to the lower electrode while controlling the magnitude of the electric power divided by a surface area of the substrate to be in a range from about 1200 W/31415.9 mmto 2000 W/31415.9 mm.

Plasma processing method, plasma processing apparatus and storage medium

A processing method which, when an organic film layer such as a PR film layerformed on the surface of a wafer W is to be removed from an SiOfilm layerbelow it by generating plasma of a process gas in a chambercomprises the step of using Ogas as the process gas to remove the organic film layer at a first pressure, e.g., 20 mTorr, lower than in a conventional case, and the step of using the same Ogas to remove the organic film layer at a second pressure, e.g., 200 mTorr, higher than the first pressure.

Processing method

The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main etching so as to remove remaining part of the resist film, a polymer adhered to the surface of the object, and an impurity layer created during the primary etching. In the post-processing step, O,gas is made into plasma, by which the remaining part of the resist layer, and the polymer adhered to the surface of the object are removed, and after such a process is substantially finished, a mixture gas including a halogen-containing gas such as CF,and O,gas is made into plasma, by which the impurity layer is removed.

Etching equipment including a post processing apparatus for removing a resist film, polymer, and impurity layer from an object

The present invention discloses a method including the main etching step for etching a semiconductor wafer having a resist film serving as an etching mask by plasma of an etching gas, and an post-processing step for processing the object after the main etching so as to remove remaining part of the resist film, a polymer adhered to the surface of the object, and a damage layer created during the primary etching. In the post-processing step, O.sub.2 gas is made into plasma, by which the remaining part of the resist layer, and the polymer adhered to the surface of the object are removed, and after such a process is substantially finished, a mixture gas including a halogen-containing gas such as CF.sub.4 and O.sub.2 gas is made into plasma, by which the damage layer is removed.

Semiconductor wafer etching method and post-etching process

A substrates treating apparatus comprising a chamber provided with a section at which a semiconductor wafer is treated and with another section at which plasma is generated. A supplier for supplying mixed gas (O.sub.2 +CF.sub.4) into the plasma generating section in the chamber, high frequency electrodes for changing the gas into plasma, an ion trap for trapping ions in the plasma to send neutral radicals into the wafer treating section, and an exhaust mechanism for exhausting the wafer treating section.

Apparatus and method for treating substrates

A plasma generating apparatus comprising a transformer including a primary winding connected to a high frequency power source and a secondary winding having two end terminals and a plurality of tap terminals connected between the end terminals, the transformer being adapted to deliver first and second high frequency electric powers with a phase difference of 180.degree. from the end terminals, upper and lower electrodes disposed in a vacuum chamber so as to be opposed at a distance from each other and supplied with the first and second high frequency powers, respectively, and a power ratio selector for switching the tap terminals to select the ratio between the first and second high frequency powers supplied to the electrodes, wherein a to-be-processed object placed on the lower electrode is processed by means of plasma formed between the electrodes.

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Nirasaki, Japan

Akihito Toda