Nuflare Technology, Inc.

Akihito Anpo

Jun Yashima

Shigehiro Hara

Hitoshi Higurashi

Yasuo Kato

Jun Kasahara

Noriaki Nakayamada

Susumu Oogi

Yusuke Sakai

Takashi Kamikubo

Shuichi Tamamushi

Hideo Inoue

Toshiro Yamamoto

Shinji Sakamoto

Yoshihiro Okamoto

Seiji Wake

Hayato Shibata

A apparatus according to an embodiment includes a unit to generate first blocks in a writing region in which at least one of writing groups respectively using different base doses is to be written, a unit to generate second blocks for proximity effect correction, in the each of the regions of the groups, a unit to calculate an area density in each of the first blocks, a unit to perform a weighting calculation on the area density for each of the first blocks by using a base dose of a corresponding group, a unit to calculate a dose coefficient for proximity effect correction, for each of the second blocks, by using a corresponding weighted area density, and a unit to calculate a dose by using the base dose of the each of the groups and the dose coefficient of the each of the second blocks.

Charged particle beam writing apparatus and charged particle beam writing method

An inspection method of pattern writing data includes creating an area map of a figure pattern written on a target object for each modulation rate for modulating a dose by using modulation rate data to modulate the dose in a case that a plurality of figure patterns is written on the target object by using a charged particle beam, and layout data in which the plurality of figure patterns is defined; converting the layout data into pattern writing data to be input into a lithography apparatus; and inspecting an amount of electric charge for each predetermined region by using the area map when a pattern is written on the target object by using the pattern writing data.

Charged particle beam lithography apparatus, inspection apparatus and inspection method of pattern writing data

A beam writing apparatus includes a unit to obtain a specific value by calculating an integer by dividing a total irradiation time by a multiplied value of a region number and a repeating times number, and by multiplying the integer by the repeating times number, to add the repeating times number to the specific value when a region is in the multiple writing unit regions and is not a specific region and when a region number of the multiple writing unit region, defined excluding the specific region, is below or equal to a value obtained by dividing the total irradiation time by the multiplied value of the region number and the repeating times number, to obtain a first remainder, and dividing the first remainder by the repeating times number, and to treat an added value of the repeating times number and the specific value, as a total irradiation time.

Charged particle beam writing apparatus and irradiation time apportionment method of charged particle beams for multiple writing

A charged particle beam writing apparatus includes a unit to divide a chip region into first data processing blocks, a unit to, in each block, extract a cell whose reference position is located in the block concerned from cells each including at least one figure pattern, a unit to, for each block, generate a first frame that surrounds the block concerned and the cell extracted, a unit to, for each first frame, divide the inside of the first frame concerned into mesh regions and calculate an area density of a figure pattern in each mesh, a unit to combine area densities of mesh regions which are overlapped with each other and between different first frames, a unit to calculate a dose of beam by using the area density, and a unit to write a pattern on a target workpiece by irradiating the beam of the dose calculated.

Charged particle beam writing apparatus and charged particle beam writing method using a generated frame that surrounds a first data processing block

A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting, for each of the plurality of writing groups, a frame which encloses a whole of all chip regions in the each of the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction, with respect to the each of the plurality of writing groups, setting, using the plurality of stripe regions of all the plurality of writing groups, an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction regardless of the plurality of writing groups, and writing a pattern in the each of the plurality of stripe regions onto a target workpiece according to the order which has been set, by using a charged particle beam.

Charged particle beam writing method and apparatus therefor

A charged particle beam writing apparatus, includes a unit to input information about a stripe region height, and to judge, when a write region is divided into stripe regions in a thin rectangular shape by the stripe region height, whether a height of a last stripe region is narrower than the stripe region height; and a unit to divide the write region into stripe regions in the thin rectangular shape in such a way that the last stripe region and a stripe region prior to the last stripe region are combined to create one stripe region and stripe regions at least two stripe regions prior to the last stripe region are each created as stripe regions of the stripe region height if the height of the last stripe region is narrower than the stripe region height.

Charged particle beam writing apparatus

A charged particle beam pattern forming apparatus, includes a charge amount distribution calculation unit configured to calculate a charge amount distribution charged by vertical incidence of a charged particle beam on a pattern forming region of a target object; a position correction unit configured to calculate, using the charge amount distribution charged, a corrected position of each pattern forming position corrected for a misregistration amount including a misregistration amount dependent on a deflection position where the charged particle beam is deflected, the misregistration amount caused by an amount of charge; and a pattern generator configured to form a pattern in the corrected position by using the charged particle beam.

Charged particle beam pattern forming apparatus and charged particle beam pattern forming method

A charged particle beam writing method includes inputting layout information of a plurality of chips on which pattern formation is to be achieved, setting, using the layout information, a plurality of writing groups each being composed of at least one of the plurality of chips and each having writing conditions differing from each other, setting a frame which encloses a whole of all chip regions in all the plurality of writing groups, virtually dividing the frame into a plurality of stripe regions in a predetermined direction while keeping chips of writing groups differing from each other intermingled, setting an order of each of the plurality of stripe regions such that a reference position of the each of the plurality of stripe regions is located in order in the predetermined direction, and writing a pattern in the each of the plurality of stripe regions onto a target workpiece according to the order which has been set, by using a charged particle beam.

A charged particle beam drawing apparatus applies a predetermined dose of a charged particle beam for drawing patterns corresponding to figures included in a drawing data, in a whole of a drawing area of a workpiece, before a result of calculation of a fogging effect correction dose is obtained, wherein a proximity effect correction dose is incorporated in the predetermined dose, and the fogging effect correction dose is not incorporated in the predetermined dose, then, the charged particle beam drawing apparatus applies a predetermined dose of the charged particle beam for drawing the patterns which overlap the patterns drawn before the result of calculation of the fogging effect correction dose is obtained, in the whole of the drawing area of the workpiece, after the calculation of the fogging effect correction dose, wherein the proximity effect correction dose and the fogging effect correction dose are incorporated in the predetermined dose.

Charged particle beam drawing apparatus and control method thereof

A write error verification method of a writing apparatus verifying a write error after a write operation being started in the writing apparatus to which layout data containing a figure pattern to be formed is input and which forms the figure pattern on a target object based on the layout data input, the write error verification method includes: if a write error occurs in a process between input of the layout data into the writing apparatus and inspection of the target object on which the figure pattern is formed, selecting a part of the layout data necessary for operation of a function that has caused the write error; extracting parts of the layout data corresponding to a selected part of the layout data for all of a plurality of portions of the target object if a pattern indicated by the selected part of the layout data is arranged at the plurality of portions of the target object; creating verification data by deleting at least one parts extracted for at least one portions other than a portion that has caused the write error from extracted parts of the layout data and by using remaining data; and reproducing the operation of the function that has caused the write error using the verification data to output a result of the reproducing.

Write error verification method of writing apparatus and creation apparatus of write error verification data for writing apparatus

A charged particle beam drawing apparatus forms a map having meshes, forms representative figures, area of each representative figure in each mesh being equal to gross area of figures in each mesh, and calculates a proximity effect correction dose of the charged particle beam in each mesh on the basis of area of each representative figure in each mesh. If it is necessary to change the proximity effect correction dose of the charged particle beam for drawing at least one pattern corresponding to at least one figure, the charged particle beam drawing apparatus changes area of the at least one figure before the representative figures are formed by a representative figure forming portion, and changes the proximity effect correction dose of the charged particle beam for drawing the at least one pattern corresponding to the at least one figure, calculated by a proximity effect correction dose calculating portion.

Charged particle beam drawing apparatus and proximity effect correction method thereof

A charged particle beam drawing apparatus for drawing patterns corresponding to figures in a drawing data, has a portion for dividing a drawing area on the workpiece into block frames, a portion for combining at least a first block frame and a second block frame into a virtual block frame, and a portion for transferring a data of the virtual block frame from an input data dividing module to a common memory of a first converter and a second converter. The first converter converts a data of a first figure included in the first block frame into a first drawing apparatus internal format data. The second converter converts a data of a second figure included in the second block frame into a second drawing apparatus internal format data. The first figure and the second figure are included in a cell extending over the first block frame and the second block frame.

Charged particle beam drawing method and apparatus

A charged particle beam writing apparatus includes an input unit configured to input writing data for writing a plurality of cell patterns including at least one cell pattern in which an identifier is added to each of data defining the at least one cell pattern extending over at least two small regions in a plurality of small regions obtained by virtually dividing a writing region, an extraction unit configured to extract the at least one cell pattern to which the identifier is added from the plurality of cell patterns, an output unit configured to output an error result when only one cell pattern is extracted, and a writing unit configured to write the plurality of cell patterns by irradiating a target workpiece with a charged particle beam, based on the writing data for which the error result is not output.

Data verification method, charged particle beam writing apparatus, and computer-readable storage medium with program

A charged particle beam lithography apparatus includes a first block area divider configured to divide a pattern forming area into a plurality of first block areas in order to make a number of shots when forming a pattern substantially equal; an area density calculator configured to calculate, using a plurality of small areas obtained by virtually dividing the pattern forming area into mesh areas of a predetermined size smaller than all of the first block areas, a pattern area density of each small area positioned therein for each of the first block areas; a second block area divider configured to re-divide the pattern forming area divided into the plurality of first block areas into a plurality of second block areas of a uniform size, which is larger than the small area; a corrected dose calculator configured to calculate, using the pattern area density of each small area, a proximity effect-corrected dose in each corresponding small area positioned inside the second block area for each of the second block areas; a beam dose calculator configured to calculate, using the proximity effect-corrected dose of each small area, a beam dose of a charged particle beam in each corresponding small area; and a pattern generator configured to form a predetermined pattern on a target object by irradiating a charged particle beam of the beam dose calculated for each of the small areas.

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Tokyo, Japan

Akihito Anpo