Ebara Corporation

Akihisa Hongo

Naoaki Ogure

Kenichi Suzuki

Atsushi Chono

Satoshi Sendai

Ryoichi Kimizuka

Koji Mishima

Hiroaki Inoue

Mizuki Nagai

Megumi Maruyama

Fumio Kuriyama

Hiroyuki Ueyama

Junitsu Yamakawa

Yukio Fukunaga

Norio Kimura

Kuniaki Horie

Shinya Morisawa

Kanji Ohno

Hiroyuki Shinozaki

Naoki Matsuda

Takeshi Murakami

Kenya Ito

Kenji Yamaguchi

Manabu Tsujimura

Masayuki Nakanishi

Hiroyuki Kaneko

Junichiro Yoshioka

Kiwamu Tsukamoto

Mitsuo Tada

Xinming Wang

Akira Ogata

Kenya Tomioka

Yasushi Isayama

Takao Kato

Tsutomu Karimata

Hiroshi Nagasawa

Akira Fukunaga

Yoshitaka Mukaiyama

Masayuki Kumekawa

Ichiro Katakabe

Tsuyoshi Tokuoka

Tetsuma Ikegami

Kazuaki Maeda

Katsumi Tsuda

Naomitsu Ozawa

Kenichi Sasabe

Noriyuki Takeuchi

Shuichi Okuyama

Kenji Kamoda

Shinya Uemura

Hirotake Yamagishi

The present invention relates to a polishing apparatus for removing surface roughness produced at a peripheral portion of a substrate, or for removing a film formed on a peripheral portion of a substrate. The polishing apparatus includes a housing for forming a polishing chamber therein, a rotational table for holding and rotating a substrate, a polishing tape supply mechanism for supplying a polishing tape into the polishing chamber and taking up the polishing tape which has been supplied to the polishing chamber, a polishing head for pressing the polishing tape against a bevel portion of the substrate, a liquid supply for supplying a liquid to a front surface and a rear surface of the substrate, and a regulation mechanism for making an internal pressure of the polishing chamber being set to be lower than an external pressure of the polishing chamber.

Polishing apparatus and substrate processing apparatus

There is provided a plating apparatus which can keep a plating solution always in its optimal condition while minimizing the amount of plating solution used, and which can easily form a uniform plated film on the plating surface of a workpiece. The plating apparatus includes: a plating solution supply system () for constantly circulating a plating solution while heating the plating solution in a circulation tank () provided with a heating apparatus (), and supplying a predetermined amount of plating solution to a plating treatment section () when carrying out plating treatment; a plating solution recovery system () for recovering the plating solution after the plating treatment in the plating treatment section (), heating the plating solution and returning the heated plating solution to the circulation tank (); and a plating solution replenishment system () for replenishing the circulation tank () with a fresh plating solution or a plating solution component.

Plating apparatus

The concentration of a leveler in a plating liquid that is used by a plating apparatus for filling metal such as copper in interconnection trenches and holes defined in the surface of a semiconductor substrate or the like is determined based on a peak area (Ar value) in a peel-off region of the plating liquid measured according to a CV or CVS process.

Method of managing a plating liquid used in a plating apparatus

A substrate processing apparatus has a substrate holder for detachably holding a substrate so that a surface, to be processed, of the substrate faces downward, and a sealing ring for sealing a peripheral portion of the surface, to be processed, of the substrate held by the substrate holder. The substrate processing apparatus also has a plurality of ejection nozzles disposed below the substrate holder for ejecting a treatment solution toward the surface, to be processed, of the substrate held by the substrate holder, and a mechanism for rotating and vertically moving the substrate holder and the ejection nozzles relative to each other.

Substrate processing apparatus and method

An object of the present invention is to provide a wafer cleaning apparatus for cleaning wafers that have received various processing such as copper plating and chemical mechanical polishing. An apparatus for cleaning front and back surfaces of a wafer with solution while rotating the wafer that has been subjected to a fabrication process is disclosed. The apparatus comprises cleaning nozzles for spraying a cleaning solution, respectively, onto a front surface of the wafer that has been processed and onto a back surface thereof and also comprises an etching nozzle for spraying an etching solution onto a vicinity of the outer periphery of the wafer.

Wafer cleaning apparatus

A method and apparatus plate a substrate to form wiring by efficiently filling a fine recess formed in a semiconductor substrate with plating metal without a void or contamination. The plating of the substrate to fill a wiring recess formed in the semiconductor substrate with plating metal includes performing an electroless plating process of forming an initial layer on the substrate, and performing an electrolytic plating process of filling the wiring recess with the plating metal, while the initial layer serves as a feeding layer.

Substrate plating method and apparatus

A substrate plating apparatus forms an interconnection layer on an interconnection region composed of a fine groove and/or a fine hole defined in a substrate. The substrate plating apparatus includes a plating unit for forming a plated layer on a surface of the substrate including the interconnection region, a chemical mechanical polishing unit for chemically mechanically polishing the substrate to remove the plated layer from the surface of the substrate leaving a portion of the plated layer in the interconnection region, a cleaning unit for cleaning the substrate after the plated layer is formed or the substrate is chemically mechanically polished, a drying unit for drying the substrate after the substrate is cleaned, and a substrate transfer unit for transferring the substrate to and from each of the first plating unit, the first chemical mechanical polishing unit, the cleaning unit, and the drying unit. The first plating unit, the first chemical mechanical polishing unit, the cleaning unit, the drying unit, and the substrate transfer unit are combined into a unitary arrangement.

Substrate plating apparatus

A revolution member supporting apparatus holds and rotates a disc-shaped object (object to be rotated) such as a semiconductor wafer. The revolution member supporting apparatus includes a rotatable member which rotates about an axis of roation, and a plurality of holding members which are disposed along a circle having a center corresponding to the axis of rotation of the rotatable member, and which revolve around the axis of rotation when the rotatable member rotates, wherein the holding members are allowed to swing about their own central axes.

Revolution member supporting apparatus and semiconductor substrate processing apparatus

A method and apparatus for plating a substrate is provided, wherein fine pits formed in the substrate, such as fine channels for wiring, are filled with a copper, copper alloy, or other material with low electrical resistance. The method is performed on a wafer W having fine pits () to fill the fine pits with a metal () and includes performing a first plating process () by immersing the wafer in a first plating solution having a composition superior in throwing power; and performing a second plating process () by immersing the substrate in a second plating solution having a composition superior in leveling ability.

A method and apparatus for forming interconnects embedding a metal such as copper (Cu) into recesses for interconnects formed on the surface of a substrate such as a semiconductor substrate. The method includes providing a substrate having fine recesses formed in the surface, subjecting the surface of the substrate to plating in a plating liquid, and subjecting the plated film formed on the surface of the substrate to electrolytic etching in an etching liquid.

Apparatus for forming interconnects

The present invention relates to a substrate plating apparatus for plating a substrate in a plating bath containing plating solution. An insoluble anode is disposed in the plating bath opposite the substrate. The substrate plating apparatus comprises a circulating vessel or dummy vessel provided separate from the plating bath, with a soluble anode and a cathode disposed in the circulating vessel or dummy vessel. An anion exchange film or selective cation exchange film is disposed between the anode and cathode and isolates the same, wherein metal ions are generated in the circulating vessel or dummy vessel by flowing current between the soluble anode and the cathode therein, and the generated metal ions are supplied to the plating bath. The substrate plating apparatus can also comprise an ion exchange film or neutral porous diaphragm disposed between the substrate and anode in the plating bath, wherein the ion exchange film or neutral porous diaphragm divides the plating bath into a substrate region and an anode region.

Substrate plating apparatus and method

The present invention relates particularly to a method of and an apparatus for forming a fine interconnection in a highly integrated circuit formed on a semiconductor substrate. The method has the steps of preparing a substrate having fine recesses formed in a surface thereof, dispersing ultrafine particles made at least partly of a metal in a predetermined solvent, producing an ultrafine particle dispersed liquid, supplying the ultrafine particle dispersed liquid to the fine recesses of the substrate, heating the substrate to melt and bond the metal, and chemical mechanical polishing the surface of the substrate to remove an excessively attached metal therefrom. According to the present invention, it is possible to stably deposit an interconnection metal of good quality using an inexpensive material.

Method of and apparatus for forming interconnection

An plating apparatus which can easily form a plated film having more uniform thickness on a surface, to be plate, of a material to be plated. The plating apparatus includes a holding portion having a heating portion for holding a material to be plated in such a state that a surface to be plated faces downward, and a plating bath for introducing an electroless plating liquid having a predetermined temperature into a plating chamber, and holding the electroless plating liquid while allowing the electroless plating liquid to overflow an overflow dam. The material which is by the holding portion, is brought into contact with the plating liquid in the plating bath to plate the material.

Electroless plating apparatus and method

Method of measuring the concentration of a leveler in a plating liquid

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Tokyo, Japan

Akihisa Hongo