Sanyo Vacuum Industries Co. Ltd.

Sharp Kabushiki Kaisha Corporation

Toray Industries, Inc.

Sanyo Vaccum Industries Co. Ltd.

Akihiro Kitabatake

Keiji Yamada

Naoki Shimoyama

Makoto Iwamoto

Shunsei Fukuchi

Masaki Maekawa

Masahiro Tanimoto

The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapour source and a target, and forms a thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapour source by heating and ionising evaporated components using the plasma. This apparatus comprises a substrate holder for holding the substrate so that its film-forming surface faces the side wall of the vacuum chamber; a rotating table for rotating the substrate holder within the vacuum chamber; a target arranged in the side wall of the vacuum chamber so that its sputtering surface faces the inside of the vacuum chamber; a shield detachably fitted in a through hole formed approximately through the centre of the target and having a hollow space therein; a gas introduction tube for introducing the inert gas into the hollow space of the shield; and a vapour source provided in the hollow space near the gas exit of the gas introduction tube. This apparatus is employed in the film-forming method of the present invention.

Process of making a thin film

The film-forming apparatus includes a gas introduction tube for introducing an inert gas into a vacuum chamber, a vapor source and a target, and forms thin film by depositing sputtered particles and evaporated particles on the surface of a substrate, the sputtered particles being liberated by sputtering the target using ion energy of plasma generated around the target while the evaporated particles being obtained by evaporating a vapor source by heating and ionizing evaporated components using the plasma. This apparatus includes a substrate holder for holding the substrate so that its film-forming surface faces the side wall of the vacuum chamber; a rotating table for rotating the substrate holder within the vacuum chamber; a target arranged in the side wall of the vacuum chamber so that its sputtering surface faces the inside of the vacuum chamber; a shield detachably fitted in a through hole formed approximately through the center of the target and having a hollow space therein; a gas introduction tube for introducing the inert gas into the hollow space of the shield; and a vapor source provided in the hollow space near the gas exit of the gas introduction tube. This apparatus is employed in the film-forming method of the present invention.

Method for forming a thin film and apparatus for the same

The dry etching device according to the present invention comprises a vacuum chamber connected to a vacuum source, a gas supply unit including a gas supply source and a number of gas supply pipes for leading a gas from the gas supply source to an inside of the vacuum chamber, and a number of electrical discharge electrodes, respectively arranged inside the vacuum chamber, for changing the gas led to the inside of the vacuum chamber into a plasma, active ions or both of the plasma and the active ions, wherein the electrical discharge electrode has a number of circular or polygonal ring shaped permanent magnets detachably interfitted into a shaft at regular intervals via each insulator in a magnetizing direction of the each permanent magnet, and aligned so that each magnet pole of the permanent magnets adjacent to each other may be equal to that of the adjacent permanent magnet.

Dry etching device

Electrode substrate for liquid crystal display device and liquid crystal

Growing community of inventors

Osaka, Japan

Akihiro Kitabatake