Tokyo Electron Limited

Akihiro Kikuchi

Yuichiro Sakamoto

Takehiro Ueda

Kimihiro Higuchi

Kaoru Oohashi

Tadashi Gondai

Satoshi Kayamori

Shinya Shima

Munehiro Shibuya

Takashi Tsunoda

Toshihiko Shindo

Hiroki Amemiya

Ryukichi Shimizu

Mitsuhiro Tomura

A method of cleaning a substrate processing apparatus including a gas supply part configured to eject a process gas via gas passages formed in the gas supply part, and divided into first and second regions corresponding to first and second in-plane positions of a substrate, respectively, includes cleaning a first one of the gas passages corresponding to the first region with the plasma of the process gas by causing a first flow rate of the process gas supplied to the first region to be lower than a second flow rate of the process gas supplied to the second region and cleaning a second one of the gas passages corresponding to the second region with the plasma by causing a third flow rate of the process gas supplied to the first region to be higher than a fourth flow rate of the process gas supplied to the second region.

Method of cleaning substrate processing apparatus

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Plasma processor and plasma processing method

An etching chamberincorporates a focus ringso as to surround a semiconductor wafer W provided on a lower electrode. The plasma processor is provided with an electric potential control DC power supplyto control the electric potential of this focus ring, and so constituted that the lower electrodeis supplied with a DC voltage of, e.g., &#x2212;400 to &#x2212;600 V to control the electric potential of the focus ring. This constitution prevents surface arcing from developing along the surface of a substrate to be processed.

Disclosed is a semiconductor device fabricating method. A substrate is provided thereon with: an inorganic insulating film; a first inorganic sacrifice film stacked on the inorganic insulating film and having components different from those of the inorganic insulating film; a second sacrifice film formed of an inorganic insulative film stacked on the first sacrifice film, wherein a pattern for forming grooves for wiring embedment is formed in the second sacrifice film; and an organic layer including a photoresist film, wherein a pattern for forming holes for wiring embedment is formed in the organic film. According to the present invention, the thickness of the organic layer is set to be greater than the sum of the thicknesses of etch target films, i.e., the insulating film, the first sacrifice film and the second sacrifice film; the etch target films are etched in a selectivity-less manner by using plasma generated from a mixed gas of CFgas and CHFgas.

Semiconductor device fabricating method, plasma processing system and storage medium

Plasma procesor and plasma processing method

A plasma etching method includes the step of: etching a silicon layer of a target object by using a plasma generated from a processing gas containing a fluorocarbon gas, a hydrofluorocarbon gas, a rare gas and an Ogas and by employing a patterned resist film as a mask. The target object includes the silicon layer whose main component is silicon and the patterned resist film formed over the silicon layer.

Plasma etching method, plasma processing apparatus, control program and computer readable storage medium

A plasma etching method and apparatus, a control program and a computer-readable storage medium storing the control program are provided. The method is provided for performing a plasma etching on a silicon oxide film through an amorphous carbon mask, wherein the plasma etching is performed by using an etching gas containing a fluorocarbon gas, an oxygen gas, a helium gas and at least one of an argon gas, a krypton gas and a xenon gas.

Plasma etching method and apparatus, control program and computer-readable storage medium storing the control program

A difference in etching rate between the coated silicon based insulating film and any of other kinds of silicon-based insulating films is reduced by using nitrogen gas as a part of the etching gas. Therefore, the underlying film may not be exposed to the etching gas for a long time, so that degradation or deterioration of the underlying film can be prevented.

Etching method, program, computer readable storage medium and plasma processing apparatus

In a method for forming microlenses, an etching process is performed by using a processing gas on an object to be processed provided with a substrate, a lens material layer formed on the substrate and a mask layer of a lens shape formed on the lens material layer to etch the lens material layer and the mask layer, so that the lens shape of the mask layer is transcribed to the lens material layer. The processing gas is a gaseous mixture of a gas containing fluorine atoms but no carbon atoms and a fluorocarbon-based gas having a ratio of the number of carbon atoms to the number of fluorine atoms which is greater than or equal to 0.5, the gaseous mixture having no oxygen gas.

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Nirasaki, Japan

Akihiro Kikuchi