Canon Anelva Corporation

Canon Anelva Engineering Corporation

Akihiro Egami

Masami Shibagaki

Akira Kumagai

Shinya Hasegawa

Kenji Numajiri

Masayoshi Ikeda

Hiroshi Doi

Yasumi Sago

Toshikazu Nakazawa

Yukito Nakagawa

Susumu Akiyama

Toshiaki Sasaki

Katsuhiro Suzuki

The inventors of this invention conducted a test and found out that to prevent peel-off of an adherent film, it is not of essential importance to set the radius of curvature equal to or larger than a predetermined threshold. The inventors of the present invention also found out that peel-off of an adherent film occurs in the region in which the curvature of a shield changes and is less likely to occur when the change in curvature of the shield is small. Accordingly, the key to the problem is the magnitude of a change in curvature of the shield, so changing the curvature stepwise makes it possible to suppress a large change in curvature, and thus to prevent peel-off of an adherent film free from any disadvantages such as deterioration in film thickness distribution, which may occur due to an increase in size of the shield.

Thin film forming apparatus, thin film forming method, and shield component

In an atmosphere in which a silicon carbide (SiC) substrate implanted with impurities is annealed to activate the impurities, by setting a partial pressure of HO to be not larger than 10Pa, preferably not larger than 10Pa, surface irregularity of the silicon carbide (SiC) substrate is controlled to be not greater than 2 nm, more preferably not greater than 1 nm in RMS value.

Annealing method for semiconductor device with silicon carbide substrate and semiconductor device

A heating process apparatus includes a process chamber, a heat-processed object support member provided in the process chamber for heating a substrate disposed thereon, a cap for covering the substrate disposed on the heat-processed object support member, a heater for heating the heat-processed object support member, a temperature measuring unit for measuring the temperature of the heat-processed object support member, and a controller for controlling the heater. A first measuring unit measures a temperature of the cap, and the controller controls the heater so as to set the cap temperature to a predetermined temperature. A second measuring unit measures a temperature of the heat-processed object support member, and the controller turns off the heater when the temperature of the heat-processed object support member exceeds an over-heat critical temperature.

Heating process apparatus

This surface processing apparatus has a reactor in which plasma is generated and a substrate whose surface is to be processed by the plasma is arranged, and a magnet plate for creating a point-cusp magnetic field distributed in an inner space of the reactor, in which the plasma is generated. The magnet plate has a plurality of magnets. These magnets are arranged by a honeycomb lattice structure in a circular plane facing in parallel a surface of the substrate. One magnetic pole end face of each of magnets is arranged at a position of each of the lattice points forming hexagonal shapes on the circular plane. The polarities of the magnetic pole end faces of two adjoining magnets are arranged to become opposite alternately. The magnet plate may be provided with a plurality of magnets arranged by a lattice structure forming a square and the magnetic force (coercive force) of some of the magnets arranged at the outermost region is reduced. Thereby, the periodicity of the point-cusp magnetic field in the inside space is maintained as much as possible even at the peripheral edge and the asymmetry of the distribution of the magnetic field at the region where the periodicity is disturbed at the peripheral edge is reduced.

Surface processing apparatus

A substrate heating apparatus having a conductive heater which heats a substrate includes a filament arranged in the conductive heater and connected to a filament power supply to generate thermoelectrons, and an acceleration power supply which accelerates the thermoelectrons between the filament and conductive heater. The filament has inner peripheral portions formed at a predetermined interval along an inner circle concentric with the substrate, outer peripheral portions formed at a predetermined interval on an outer circle concentric with the inner circle and having a diameter larger than that of the inner circle, and a region formed by connecting the end point of each inner peripheral portions and the end point of a corresponding one of the outer peripheral portions.

Substrate heating apparatus, heating method, and semiconductor device manufacturing method

A substrate heating apparatus having a heating unit for heating a substrate placed in a process chamber which can be evacuated includes a suscepter which is installed between the heating unit and a substrate, and on which the substrate is mounted, and a heat receiving member which is installed to oppose the suscepter with the substrate being sandwiched between them, and receives heat from the heating unit via the suscepter. A ventilating portion which allows a space formed between the heat receiving member and substrate to communicate with a space in the process chamber is formed.

Growing community of inventors

Kawasaki, Japan

Akihiro Egami