Tokyo Electron Limited

Akihiko Tsukada

Kazunari Sakata

Tamotsu Tanifuji

Kouji Shimomura

Daisuke Toriya

Akihiko Hiroe

Kenji Homma

A film processing device using vaporized liquid source capable of confirming the flow control accuracy of flow control equipment such as a mass flow controller () controlling the flow of the liquid source without separating the flow control equipment from piping and disassembling the piping, comprising a bypass passage () for bypassing a part of a washing fluid feed passage () for feeding washing fluid to a liquid source feed passage () and a flowmeter such as an MFM (), wherein the washing fluid is allowed to flow to the mass flow controller () through the MFM (), and the flow of the washing fluid detected by the MFM () is compared with a target flow set in the mass flow controller () to check whether the mass flow controller () operates normally or not.

Processing device and method of maintaining the device

Disclosed is an MOCVD system for forming a tantalum oxide film on a semiconductor wafer, while using pentoethoxytantalum as a liquid raw material. In the system, a raw material tank is connected to a vaporizing unit through an upstream main line with a flow control unit. The vaporizing unit is connected to the process chamber of a film-forming unit through a downstream main line. A partition wall is arranged to surround the entire system so as to isolate it from the other space in the clean room. The raw material tank, the flow control unit, and part of the upstream main line therebetween are accommodated in a constant temperature and heat insulating box all together and are kept at a temperature of from 25 to 35&deg; C.

MOCVD system

Heat treatment apparatus

Vertical heat treatment apparatus

Growing community of inventors

Nirasaki, Japan

Akihiko Tsukada