Toshiba Ceramics Co., Ltd.

Nissan Motor Company Limited

Globalwafers Japan Co., Ltd.

Akihiko Kobayashi

Kazuhiko Kashima

Minoru Tamura

Hideaki Inoue

Koji Izunome

Takeshi Senda

Susumu Maeda

Koji Araki

Takashi Ishikawa

Hiromichi Isogai

Haruo Sudo

Tatsuhiko Aoki

Naoki Maruko

Masayuki Watanabe

Eiji Toyoda

Kumiko Murayama

Junichi Osanai

Hiroyuki Fujimori

Kouki Ikeuchi

Yumiko Hirano

Toshirou Minami

Yoichiro Mochizuki

Takashi Miyahara

Senlin Fu

Osamu Kubota

A silicon wafer produced from a silicon single crystal ingot grown by Czochralski process is subjected to rapid heating/cooling thermal process at a maximum temperature (T) of 1300&#xb0; C. or more, but less than 1380&#xb0; C. in an oxidizing gas atmosphere having an oxygen partial pressure of 20% or more, but less than 100%. The silicon wafer according to the invention has, in a defect-free region (DZ layer) including at least a device active region of the silicon wafer, a high oxygen concentration region having a concentration of oxygen solid solution of 0.7&#xd7;10atoms/cmor more and at the same time, the defect-free region contains interstitial silicon in supersaturated state.

Method of manufacturing single crystal silicon wafer from ingot grown by Czocharlski process with rapid heating/cooling process

At the time of fabricating a silicon single crystal wafer from a nitrogen-doped silicon single crystal grown according to the Czochralski method, a silicon single crystal wafer covered with a region in which an oxygen precipitation bulk micro defect and an oxidation induced stacking fault mixedly exist is subjected to heat treatment at a temperature of 1100 to 1300&#xb0; C. in a reducing gas or inert gas atmosphere. In such a manner, a method of fabricating a high-quality silicon single crystal wafer and a silicon single crystal wafer in which no grown-in crystal defects exist in the whole surface and oxygen precipitation bulk micro defects (BMD) are formed at a sufficiently high density to display the IG effect on the inner side can be provided. The single crystal wafer can be suitably used to form an operation region of a semiconductor device.

Silicon single crystal wafer fabricating method and silicon single crystal wafer

A method of fabricating a silicon single crystal ingot and a method of fabricating a silicon wafer using the ingot, characterized in that: the method is structured in such a manner that the silicon single crystal ingot is pulled up from the silicon fused liquid in which nitrogen N and carbon C are doped in polycrystalline silicon, by using the Czochralski method, and its nitrogen density is 1&times;10 -5&times;10 atoms/cm , and the carbon density is 5&times;10 -3&times;10 atoms/cm .

Method of fabricating a single crystal ingot and method of fabricating a silicon wafer

A method and apparatus for assisting operation by a vehicle operator for braking of a vehicle includes a detection system on the vehicle, which detects obstacles located in or near the direction of motion of the vehicle. Vehicle condition sensors on the vehicle provide characteristic parameters of the condition of the vehicle. Operator demand sensors, which are operatively associated with a brake pedal and an accelerator pedal, provide operator demands on the vehicle. A control unit determines whether or not braking action by the vehicle operator is needed from data concerning the obstacles, the characteristic parameters of vehicle condition and the operator demands on the vehicle and determines a target stand-by brake pressure. The control unit is operable to generate a command for adjustment of brake pressure to the determined stand-by brake pressure. A braking system on the vehicle is operable by the vehicle operator. The braking system is operable in response to the command to trigger stand-by brake pressure regulation upon determination that braking action by the vehicle operator is needed.

Method and apparatus for assisting vehicle operator braking action of a vehicle

Growing community of inventors

Niigata, Japan

Akihiko Kobayashi