Ulvac, Inc.

Akifumi Sano

Koji Suzuki

Naoki Morimoto

Tomoyasu Kondo

Hideto Nagashima

Junichi Hamaguchi

Daisuke Mori

Shuji Kodaira

Yuta Sakamoto

Koukichi Kamada

Yukinobu Numata

Yoshiyuki Kadokura

Joji Hiroishi

A method of manufacturing a semiconductor device includes a groove portion formation process of forming a groove portion in a base body, a bather layer formation process of forming a barrier layer covering at least the inner wall surface of the groove portion, a seed layer formation process of forming a seed layer covering the barrier layer, and a seed layer melting process of causing the seed layer to be melted using the reflow method. The seed layer is made of Cu.

Method of manufacturing semiconductor device

There is provided an inexpensive sputtering apparatus in which self-sputtering can be stably performed by accelerating the ionization of the atoms scattered from a target. The sputtering apparatus has: a target which is disposed inside a vacuum chamber so as to lie opposite to the substrate W to be processed; a magnet assembly which forms a magnetic field in front of the sputtering surface of the target; and a DC power supply which charges the target with a negative DC potential. A first coil is disposed in a central portion of a rear surface of the sputtering surface of the target. The first coil is electrically connected between the first power supply and the output to the target. When a negative potential is charged to the target by the sputtering power supply, the electric power is charged to the first coil, whereby a magnetic field is generated in front of the sputtering surface.

Sputtering apparatus

Growing community of inventors

Susono, Japan

Akifumi Sano