Texas Instruments Corporation

Adolfo Anciso

Lancy Y Tsung

Richard B Irwin

Patrick J Jones

Doug Matheson

The present invention provides, in one aspect, a method of imaging a microelectronics device. The method comprises cleaning, when contaminants are preset, a sample of a microelectronics deviceto be imaged with a first solution comprising hydrofluoric acid, an inorganic acid and water, exposing the sample to a second solution comprising hydrofluoric acid, an inorganic acid and an organic acid, wherein the second solution forms a contrast between different regions within the sample, and producing an image of the contrasted sample.

Chemical etch solution and technique for imaging a device's shallow junction profile

A method for preparing a sample includes separating a portion of substrate from a sample, performing focused ion beam milling, and removing additional sample material using an etchant.

Site-specific method for large area uniform thickness plan view transmission electron microscopy sample preparation

A method of preparing a TEM sample. A focused ion beam is used to deposit a mask on the material to be sampled. Reactive ion etching removes material not protected by the mask, leaving a wall thin enough to be imaged by TEM.

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Garland, TX, United States of America

Adolfo Anciso