Tokyo, Japan

Ken′ichiro Hijioka


Average Co-Inventor Count = 6.0

ph-index = 1

Forward Citations = 1(Granted Patents)


Company Filing History:


Years Active: 2009

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1 patent (USPTO):Explore Patents

Title: Ken′ichiro Hijioka: Innovator in Semiconductor Technology

Introduction

Ken′ichiro Hijioka is a prominent inventor based in Tokyo, Japan. He has made significant contributions to the field of semiconductor technology, particularly through his innovative patent that addresses critical challenges in semiconductor manufacturing.

Latest Patents

Hijioka holds a patent for a semiconductor device and its manufacturing method. This invention provides a technique for protecting an interlayer insulating film made of an organic low dielectric constant material from damage during semiconductor processes. It also aims to reduce leak current in the interlayer insulating film, thereby improving the reliability of semiconductor devices. The semiconductor device features organic insulating films with openings, where modified portions containing fluorine and nitrogen atoms are strategically placed. The concentration of fluorine atoms in these modified portions is lower than that of nitrogen atoms, which helps protect the semiconductor device from damage while minimizing corrosion of the conductors embedded in the openings.

Career Highlights

Hijioka is associated with NEC Corporation, where he has been instrumental in advancing semiconductor technologies. His work has not only contributed to the company's reputation but has also had a lasting impact on the industry.

Collaborations

Throughout his career, Hijioka has collaborated with notable colleagues, including Hiroto Ohtake and Munehiro Tada. These partnerships have fostered innovation and have been essential in the development of cutting-edge semiconductor solutions.

Conclusion

Ken′ichiro Hijioka's contributions to semiconductor technology exemplify the importance of innovation in enhancing device reliability and performance. His work continues to influence the field and inspire future advancements in semiconductor manufacturing.

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